8 research outputs found

    Arsenate–Ferrihydrite Systems from Minutes to Months: A Macroscopic and IR Spectroscopic Study of an Elusive Equilibrium

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    Sorption by ferrihydrite is an important control on As­(V) concentrations in many oxic aquatic systems. There are significant discrepancies in reported sorption constants (log­(<i>K</i><sub>As</sub>)), which presents a problem for quantifying and understanding this important system. A review of reported ferrihydrite–As­(V) sorption studies indicated a positive correlation between reaction time used in the experiments and the log­(<i>K</i><sub>As</sub>) values derived from the data. In this paper, we study the kinetics of As­(V) sorption over ≈3000 h in nine systems with varying pH and As­(V)/Fe. Ferrihydrite was stable in all systems containing As­(V), and the [As­(V)] in solution decreased linearly as a function of log­(<i>t</i>) (termed Elovich kinetics) over the full 3000 h in most systems. A stable [As­(V)] was only observed in systems with low As­(V)/Fe and low pH. Apparent As­(V) sorption constants were derived from the data at specific time intervals using the diffuse layer model and equations describing log­(<i>K</i><sub>As</sub>) values as a function of time provide a way to describe this elusive equilibrium. IR spectra support the hypothesis that slow interparticle diffusion is responsible for the slow approach to equilibrium. This work resolves discrepancies in previous studies of As­(V)–ferrihydrite and provides equations to allow for system appropriate log­(<i>K</i><sub>As</sub>) values to be used

    Germination Shifts of C<sub>3</sub> and C<sub>4</sub> Species under Simulated Global Warming Scenario

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    <div><p>Research efforts around the world have been increasingly devoted to investigating changes in C<sub>3</sub> and C<sub>4</sub> species' abundance or distribution with global warming, as they provide important insight into carbon fluxes and linked biogeochemical cycles. However, changes in the early life stage (e.g. germination) of C<sub>3</sub> and C<sub>4</sub> species in response to global warming, particularly with respect to asymmetric warming, have received less attention. We investigated germination percentage and rate of C<sub>3</sub> and C<sub>4</sub> species under asymmetric (+3/+6°C at day/night) and symmetric warming (+5/+5°C at day/night), simulated by alternating temperatures. A thermal time model was used to calculate germination base temperature and thermal time constant. Two additional alternating temperature regimes were used to test temperature metrics effect. The germination percentage and rate increased continuously for C<sub>4</sub> species, but increased and then decreased with temperature for C<sub>3</sub> species under both symmetric and asymmetric warming. Compared to asymmetric warming, symmetric warming significantly overestimated the speed of germination percentage change with temperature for C<sub>4</sub> species. Among the temperature metrics (minimum, maximum, diurnal temperature range and average temperature), maximum temperature was most correlated with germination of C<sub>4</sub> species. Our results indicate that global warming may favour germination of C<sub>4</sub> species, at least for the C<sub>4</sub> species studied in this work. The divergent effects of asymmetric and symmetric warming on plant germination also deserve more attention in future studies.</p></div

    Thermal time model parameter estimates (<i>T<sub>b</sub></i>, minimum temperature; <i>θ</i><sub>1</sub>, thermal time constant) for C<sub>4</sub> and C<sub>3</sub> species under the symmetric warming (SW) and asymmetric warming (AW) alternating temperature regimes.

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    <p>Thermal time model parameter estimates (<i>T<sub>b</sub></i>, minimum temperature; <i>θ</i><sub>1</sub>, thermal time constant) for C<sub>4</sub> and C<sub>3</sub> species under the symmetric warming (SW) and asymmetric warming (AW) alternating temperature regimes.</p

    The Influence of Surface Structure on H<sub>4</sub>SiO<sub>4</sub> Oligomerization on Rutile and Amorphous TiO<sub>2</sub> Surfaces: An ATR-IR and Synchrotron XPS Study

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    Silicic acid (H<sub>4</sub>SiO<sub>4</sub>) is ubiquitous in natural aquatic systems. Applications of TiO<sub>2</sub> in these systems will be influenced by H<sub>4</sub>SiO<sub>4</sub> sorption and oligomerization reactions on the TiO<sub>2</sub> surface, and this can affect many aspects of TiO<sub>2</sub> reactivity. The spatial arrangement of sorption sites on a metal oxide surface can promote specific lateral interactions, such as oligomerization, between sorbed species. In this work we explore the relationship between surface structure and interfacial H<sub>4</sub>SiO<sub>4</sub> oligomerization by quantifying the extent of H<sub>4</sub>SiO<sub>4</sub> sorption and oligomerization on three TiO<sub>2</sub> phases; a rutile phase having well-developed (110) faces (R180), a rutile phase with poorly developed (110) faces (R60), and an amorphous TiO<sub>2</sub> (TiO<sub>2(am)</sub>). The <i>in situ</i> ATR-IR spectra measured over time as 0.2 mM H<sub>4</sub>SiO<sub>4</sub> reacted with TiO<sub>2</sub> were quite different on the three TiO<sub>2</sub> phases. The percentage of the surface H<sub>4</sub>SiO<sub>4</sub> that was present as oligomers increased over time on all phases, but after 20 h almost all H<sub>4</sub>SiO<sub>4</sub> on the R180 surface was oligomeric, while the H<sub>4</sub>SiO<sub>4</sub> on TiO<sub>2(am)</sub> was predominantly monomeric. The extent of H<sub>4</sub>SiO<sub>4</sub> oligomerization on R60 was intermediate. When the TiO<sub>2</sub> phases reacted with 1.5 mM H<sub>4</sub>SiO<sub>4</sub> the ATR-IR spectra showed oligomeric silicates dominating the surface of all three TiO<sub>2</sub> phases; however, after 20 h the percentage of the surface H<sub>4</sub>SiO<sub>4</sub> present as three-dimensional polymers was ∼30, 10, and 0% on R180, R60, and TiO<sub>2(am)</sub> respectively. The Si 2s photoelectron peak binding energy (BE) and the H<sub>4</sub>SiO<sub>4</sub> surface coverage (Γ<sub>Si</sub>) were measured by XPS over a range of Γ<sub>Si</sub>. For any given Γ<sub>Si</sub> the Si 2s BE’s were in the order R180 > R60 > TiO<sub>2(am)</sub>. A higher Si 2s BE indicates a greater degree of silicate polymerization. The ATR-IR and XPS results support the existing model for interfacial H<sub>4</sub>SiO<sub>4</sub> oligomerization where linear trimeric silicates are formed by insertion of a solution H<sub>4</sub>SiO<sub>4</sub> between suitably orientated adjacent bidentate sorbed monomers. The TiO<sub>2(am)</sub> has previously been shown to consist of ∼2 nm diameter particles with a highly disordered surface. When compared to the TiO<sub>2(am)</sub> surface, the regular arrangement of TiO<sub>6</sub> octahedra on the rutile (110) face means that sorbed H<sub>4</sub>SiO<sub>4</sub> monomers on adjacent rows of singly coordinated oxygen atoms are oriented so as to favor linear trimer formation. Higher silicate polymers can form between adjacent trimers, and this is favored on the rutile (110) surfaces compared to the TiO<sub>2(am)</sub>. This is also expected on the basis of the arrangement of surface sites on the rutile (110) surface and because the high surface curvature inherent in a ∼2 nm spherical TiO<sub>2(am)</sub> particle would increase the spatial separation of adjacent trimers

    Pearson correlation analysis of germination percentage (GP) and germination rate (GR) with temperature metrics (TM, minimum, maximum, average, diurnal temperature range (DTR)) from the four alternating temperature regimes for C<sub>4</sub> and C<sub>3</sub> species (<i>r</i>, correlation coefficient; <i>P</i>, probability for the correlation).

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    <p>Pearson correlation analysis of germination percentage (GP) and germination rate (GR) with temperature metrics (TM, minimum, maximum, average, diurnal temperature range (DTR)) from the four alternating temperature regimes for C<sub>4</sub> and C<sub>3</sub> species (<i>r</i>, correlation coefficient; <i>P</i>, probability for the correlation).</p

    The two-way ANOVA analysis of the effects of plant photosynthetic type (PPT) and temperature treatments (T) in four temperature regimes on germination percentage and germination rate.

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    <p>ns, <i>P</i>>0.05;</p><p>*, <i>P</i><0.05;</p><p>**, <i>P</i><0.01;</p><p>***, <i>P</i><0.001</p>†<p>The degree of freedom for TmaxC temperature regime is 10 and df of other temperature regimes is 5.</p

    Germination rates of C<sub>4</sub> and C<sub>3</sub> species under different alternating temperature regimes.

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    <p>See <a href="http://www.plosone.org/article/info:doi/10.1371/journal.pone.0105139#pone-0105139-g001" target="_blank">Fig. 1</a> for symbols.</p

    The Influence of Surface Structure on H<sub>4</sub>SiO<sub>4</sub> Oligomerization on Rutile and Amorphous TiO<sub>2</sub> Surfaces: An ATR-IR and Synchrotron XPS Study

    No full text
    Silicic acid (H<sub>4</sub>SiO<sub>4</sub>) is ubiquitous in natural aquatic systems. Applications of TiO<sub>2</sub> in these systems will be influenced by H<sub>4</sub>SiO<sub>4</sub> sorption and oligomerization reactions on the TiO<sub>2</sub> surface, and this can affect many aspects of TiO<sub>2</sub> reactivity. The spatial arrangement of sorption sites on a metal oxide surface can promote specific lateral interactions, such as oligomerization, between sorbed species. In this work we explore the relationship between surface structure and interfacial H<sub>4</sub>SiO<sub>4</sub> oligomerization by quantifying the extent of H<sub>4</sub>SiO<sub>4</sub> sorption and oligomerization on three TiO<sub>2</sub> phases; a rutile phase having well-developed (110) faces (R180), a rutile phase with poorly developed (110) faces (R60), and an amorphous TiO<sub>2</sub> (TiO<sub>2(am)</sub>). The <i>in situ</i> ATR-IR spectra measured over time as 0.2 mM H<sub>4</sub>SiO<sub>4</sub> reacted with TiO<sub>2</sub> were quite different on the three TiO<sub>2</sub> phases. The percentage of the surface H<sub>4</sub>SiO<sub>4</sub> that was present as oligomers increased over time on all phases, but after 20 h almost all H<sub>4</sub>SiO<sub>4</sub> on the R180 surface was oligomeric, while the H<sub>4</sub>SiO<sub>4</sub> on TiO<sub>2(am)</sub> was predominantly monomeric. The extent of H<sub>4</sub>SiO<sub>4</sub> oligomerization on R60 was intermediate. When the TiO<sub>2</sub> phases reacted with 1.5 mM H<sub>4</sub>SiO<sub>4</sub> the ATR-IR spectra showed oligomeric silicates dominating the surface of all three TiO<sub>2</sub> phases; however, after 20 h the percentage of the surface H<sub>4</sub>SiO<sub>4</sub> present as three-dimensional polymers was ∼30, 10, and 0% on R180, R60, and TiO<sub>2(am)</sub> respectively. The Si 2s photoelectron peak binding energy (BE) and the H<sub>4</sub>SiO<sub>4</sub> surface coverage (Γ<sub>Si</sub>) were measured by XPS over a range of Γ<sub>Si</sub>. For any given Γ<sub>Si</sub> the Si 2s BE’s were in the order R180 > R60 > TiO<sub>2(am)</sub>. A higher Si 2s BE indicates a greater degree of silicate polymerization. The ATR-IR and XPS results support the existing model for interfacial H<sub>4</sub>SiO<sub>4</sub> oligomerization where linear trimeric silicates are formed by insertion of a solution H<sub>4</sub>SiO<sub>4</sub> between suitably orientated adjacent bidentate sorbed monomers. The TiO<sub>2(am)</sub> has previously been shown to consist of ∼2 nm diameter particles with a highly disordered surface. When compared to the TiO<sub>2(am)</sub> surface, the regular arrangement of TiO<sub>6</sub> octahedra on the rutile (110) face means that sorbed H<sub>4</sub>SiO<sub>4</sub> monomers on adjacent rows of singly coordinated oxygen atoms are oriented so as to favor linear trimer formation. Higher silicate polymers can form between adjacent trimers, and this is favored on the rutile (110) surfaces compared to the TiO<sub>2(am)</sub>. This is also expected on the basis of the arrangement of surface sites on the rutile (110) surface and because the high surface curvature inherent in a ∼2 nm spherical TiO<sub>2(am)</sub> particle would increase the spatial separation of adjacent trimers
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