The Influence of Surface
Structure on H<sub>4</sub>SiO<sub>4</sub> Oligomerization on Rutile
and Amorphous TiO<sub>2</sub> Surfaces: An ATR-IR and Synchrotron
XPS Study
Silicic acid (H<sub>4</sub>SiO<sub>4</sub>) is ubiquitous
in natural
aquatic systems. Applications of TiO<sub>2</sub> in these systems
will be influenced by H<sub>4</sub>SiO<sub>4</sub> sorption and oligomerization
reactions on the TiO<sub>2</sub> surface, and this can affect many
aspects of TiO<sub>2</sub> reactivity. The spatial arrangement of
sorption sites on a metal oxide surface can promote specific lateral
interactions, such as oligomerization, between sorbed species. In
this work we explore the relationship between surface structure and
interfacial H<sub>4</sub>SiO<sub>4</sub> oligomerization by quantifying
the extent of H<sub>4</sub>SiO<sub>4</sub> sorption and oligomerization
on three TiO<sub>2</sub> phases; a rutile phase having well-developed
(110) faces (R180), a rutile phase with poorly developed (110) faces
(R60), and an amorphous TiO<sub>2</sub> (TiO<sub>2(am)</sub>). The <i>in situ</i> ATR-IR spectra measured over time as 0.2 mM H<sub>4</sub>SiO<sub>4</sub> reacted with TiO<sub>2</sub> were quite different
on the three TiO<sub>2</sub> phases. The percentage of the surface
H<sub>4</sub>SiO<sub>4</sub> that was present as oligomers increased
over time on all phases, but after 20 h almost all H<sub>4</sub>SiO<sub>4</sub> on the R180 surface was oligomeric, while the H<sub>4</sub>SiO<sub>4</sub> on TiO<sub>2(am)</sub> was predominantly monomeric.
The extent of H<sub>4</sub>SiO<sub>4</sub> oligomerization on R60
was intermediate. When the TiO<sub>2</sub> phases reacted with 1.5
mM H<sub>4</sub>SiO<sub>4</sub> the ATR-IR spectra showed oligomeric
silicates dominating the surface of all three TiO<sub>2</sub> phases;
however, after 20 h the percentage of the surface H<sub>4</sub>SiO<sub>4</sub> present as three-dimensional polymers was ∼30, 10,
and 0% on R180, R60, and TiO<sub>2(am)</sub> respectively. The Si
2s photoelectron peak binding energy (BE) and the H<sub>4</sub>SiO<sub>4</sub> surface coverage (Γ<sub>Si</sub>) were measured by
XPS over a range of Γ<sub>Si</sub>. For any given Γ<sub>Si</sub> the Si 2s BE’s were in the order R180 > R60 >
TiO<sub>2(am)</sub>. A higher Si 2s BE indicates a greater degree
of silicate
polymerization. The ATR-IR and XPS results support the existing model
for interfacial H<sub>4</sub>SiO<sub>4</sub> oligomerization where
linear trimeric silicates are formed by insertion of a solution H<sub>4</sub>SiO<sub>4</sub> between suitably orientated adjacent bidentate
sorbed monomers. The TiO<sub>2(am)</sub> has previously been shown
to consist of ∼2 nm diameter particles with a highly disordered
surface. When compared to the TiO<sub>2(am)</sub> surface, the regular
arrangement of TiO<sub>6</sub> octahedra on the rutile (110) face
means that sorbed H<sub>4</sub>SiO<sub>4</sub> monomers on adjacent
rows of singly coordinated oxygen atoms are oriented so as to favor
linear trimer formation. Higher silicate polymers can form between
adjacent trimers, and this is favored on the rutile (110) surfaces
compared to the TiO<sub>2(am)</sub>. This is also expected on the
basis of the arrangement of surface sites on the rutile (110) surface
and because the high surface curvature inherent in a ∼2 nm
spherical TiO<sub>2(am)</sub> particle would increase the spatial
separation of adjacent trimers