7 research outputs found
Defect Engineering in the formation of Ultra-shallow junctions for advanced nano-metal-oxide-semiconductor technology
Ph.DDOCTOR OF PHILOSOPH
Method for fabricating semiconductor devices with reduced junction diffusion
US8053340Granted Paten
Method for forming a shallow junction region using defect engineering and laser annealing
US7888224Granted Paten
Method for fabricating semiconductor devices with shallow diffusion regions
US8101487Granted Paten
Stable Organic Monolayers on Oxide-Free Silicon/Germanium in a Supercritical Medium: A New Route to Molecular Electronics
Oxide-free Si and Ge surfaces have
been passivated and modified
with organic molecules by forming covalent bonds between the surfaces
and reactive end groups of linear alkanes and aromatic species using
single-step deposition in supercritical carbon dioxide (SCCO<sub>2</sub>). The process is suitable for large-scale manufacturing due to short
processing times, simplicity, and high resistance to oxidation. It
also allows the formation of monolayers with varying reactive terminal
groups, thus enabling formation of nanostructures engineered at the
molecular level. Ballistic electron emission microscopy (BEEM) spectra
performed on the organic monolayer on oxide-free silicon capped by
a thin gold layer reveals for the first time an increase in transmission
of the ballistic current through the interface of up to three times
compared to a control device, in contrast to similar studies reported
in the literature suggestive of oxide-free passivation in SCCO<sub>2</sub>. The SCCO<sub>2</sub> process combined with the preliminary
BEEM results opens up new avenues for interface engineering, leading
to molecular electronic devices
Stable organic monolayers on oxide-free silicon/germanium in a supercritical medium: A new route to molecular electronics
10.1021/jz4005416Journal of Physical Chemistry Letters491397-140