14 research outputs found
Polarity-Free Epitaxial Growth of Heterostructured ZnO/ZnS Core/Shell Nanobelts
Surface-polarity-induced formation of ZnO/ZnS heterojunctions
has
a common characteristic that ZnS (or ZnO) is exclusively decorated
on a Zn-terminated (0001) surface of ZnO (or ZnS) due to its comparatively
chemically active nature to an O (or S)-terminated (000–1)
surface. Here, we report a polarity-free and symmetrical growth of
ZnS on both ZnO±(0001) surfaces to form a new heterostructured
ZnO/ZnS core/shell nanobelt via a thermal evaporation method. Remarkably,
the ZnS shell is single-crystalline and preserves the structure and
orientation of the inner ZnO nanobelt with an epitaxial relationship
of (0001)<sub>ZnO</sub>//(0001)<sub>ZnS</sub>; [2–1–10]<sub>ZnO</sub>//[2–1–10]<sub>ZnS</sub>. Through this case,
we demonstrate that an anion-terminated polar surface could also drive
the nucleation and growth of nanostructures as the cation-terminated
surface by controlling the growth kinetics. Considering high-performance
devices based on ZnO/ZnS heterojunctions, the current ZnO/ZnS nanobelt
is advantageous for optoelectronic applications due to its single-crystalline
nature and relatively more efficient charge separation along 3D heterointerfaces
Assembly of Three-Dimensional Hetero-Epitaxial ZnO/ZnS Core/Shell Nanorod and Single Crystalline Hollow ZnS Nanotube Arrays
Hetero-epitaxial growth along three-dimensional (3D) interfaces from materials with an intrinsic large lattice mismatch is a key challenge today. In this work we report, for the first time, the controlled synthesis of vertically aligned ZnO/ZnS core/shell nanorod arrays composed of single crystalline wurtzite (WZ) ZnS conformally grown on ZnO rods along 3D interfaces through a simple two-step thermal evaporation method. Structural characterization reveals a “(01–10)<sub>ZnO</sub>//(01–10)<sub>ZnS</sub> and [0001]<sub>ZnO</sub>//[0001]<sub>ZnS</sub>” epitaxial relationship between the ZnO core and the ZnS shell. It is exciting that arrays of single crystalline hollow ZnS nanotubes are also innovatively obtained by simply etching away the inner ZnO cores. On the basis of systematic structural analysis, a rational growth mechanism for the formation of hetero-epitaxial core/shell nanorods is proposed. Optical properties are also investigated <i>via</i> cathodoluminescence and photoluminescence measurements. Remarkably, the synthesized ZnO/ZnS core/shell heterostructures exhibit a greatly reduced ultraviolet emission and dramatically enhanced green emission compared to the pure ZnO nanorods. The present single-crystalline heterostructure and hollow nanotube arrays are envisaged to be highly promising for applications in novel nanoscale optoelectronic devices, such as UV-A photodetectors, lasers, solar cells, and nanogenerators
Synthesis, crystal structures and photoluminescent properties of two Cd(II)/Zn(II) coordination polymers with rarely 8-/2-fold interpenetrated based on 4,4′-stilbenedicarboxylic acid and imidazole ligands
<p>Two coordination polymers, [Cd(sbdc)(bmib)]<sub>n</sub> (<b>1</b>) and {[Zn(sbdc)(tib)]·0.5H<sub>2</sub>O}<sub>n</sub> (<b>2</b>) (H<sub>2</sub>sbdc = 4,4′-stilbenedicarboxylic, bmib = 1,4-bis(2-methylimidazol-1-yl)butane, tib = 1,3,5-tris(1-imidazolyl)benzene), have been synthesized under solvothermal conditions, characterized by elemental analysis, infrared spectra, thermogravimetric analysis, and single-crystal X-ray diffraction. Single-crystal X-ray diffraction analysis reveals that <b>1</b> and <b>2</b> show 8-fold and 2-fold interpenetrating 3-D frameworks, respectively. Complexes <b>1</b> and <b>2</b> display a 4-connected (6<sup>6</sup>) <b>sqc6</b> and a 4-connected (4<sup>4</sup>·6<sup>2</sup>) <b>sql</b> topology, respectively. Photoluminescent and thermal properties of <b>1</b> and <b>2</b> have also been investigated.</p
Silicon/Hematite Core/Shell Nanowire Array Decorated with Gold Nanoparticles for Unbiased Solar Water Oxidation
We
report the facile fabrication of three-dimensional (3D) silicon/hematite
core/shell nanowire arrays decorated with gold nanoparticles (AuNPs)
and their potential application for sunlight-driven solar water splitting.
The hematite and AuNPs respectively play crucial catalytic and plasmonic
photosensitization roles, while silicon absorbs visible light and
generates high photocurrent. Under simulated solar light illumination,
solar water splitting with remarkable efficiency is achieved with
no external bias applied. Such a nanocomposite photoanode design offers
great promise for unassisted sunlight-driven water oxidation, and
further stability and efficiency improvements to the device will lead
to exciting prospects for practical solar water splitting and artificial
photosynthesis
Metal-Catalyzed Electroless Etching of Silicon in Aerated HF/H<sub>2</sub>O Vapor for Facile Fabrication of Silicon Nanostructures
Inspired
by metal corrosion in air, we demonstrate that metal-catalyzed
electroless etching (MCEE) of silicon can be performed simply in aerated
HF/H<sub>2</sub>O vapor for facile fabrication of three-dimensional
silicon nanostructures such as silicon nanowires (SiNW) arrays. Compared
to MCEE commonly performed in aqueous HF solution, the present pseudo
gas phase etching offers exceptional simplicity, flexibility, environmental
friendliness, and scalability for the fabrication of three-dimensional
silicon nanostructures with considerable depths because of replacement
of harsh oxidants such as H<sub>2</sub>O<sub>2</sub> and AgNO<sub>3</sub> by environmental-green and ubiquitous oxygen in air, minimum
water consumption, and full utilization of HF
Phosphorylation levels of K<sub>V</sub>4.3 and K<sub>V</sub>2.2 in normal, sham, and obstruction groups.
<p>Phosphorylation of Kv4.3 and Kv2.2 were examined by immunoprecipitation (IP) with ant-Kv4.3 antibody followed by IB with antibody against p-threonine, p-serine and Kv4.3 or IP with anti- Kv2.2 antibody followed by IB with antibody against p-threonine, p-serine and Kv2.2 (A). Corresponding bands were scanned and the phosphorylation band optical density was normalized by the total protein density. Data were the means ± SD and were expressed as folds versus normal. *<i>P</i><0.05 versus normal and sham, n = 5 (B).</p
Kv4.3 and Kv2.2 expressions of intestinal smooth muscle tissues in normal, sham, and obstruction groups.
<p>A shows the westernblot bands performed with anti-Kv4.3 or anti- Kv2.2 antibodies to detect the Kv4.3 and Kv2.2 expression levels. GAPDH was used as internal control to normalize for difference in loading. Corresponding bands were scanned and the Kv4.3 or Kv2.2 band optical density was normalized by the GAPDH protein density. Data showed the means ± SD, n = 6, *<i>P</i><0.05 versus sham groups (B).</p
Changes of slow wave and resting membrane potential (RMP) in hypertrophic smooth muscles.
<p>Electrical slow waves were recorded from small intestinal muscle stripes of normal group (Aa), sham group (Ab), and obstruction group (Ac). The RMP (Ba), amplitudes (Bb) and frequencies (Bc) of slow wave were significantly changed in normal, sham and obstruction groups. Data showed the means ± SE *<i>P</i><0.01 versus sham and normal groups.</p
Comparison of IK<sub>V</sub> in normal sham and obstruction groups.
<p>A shows representative current traces elicited from a holding potential of −60 mV using voltage steps of 400 ms from −40 mV to +100 mV in 20 mV increments. Interval between each pulse is 10 s. Averaged current density-voltage relation of IK<sub>Vpeak</sub> (B) and IK<sub>Vsustained</sub> (C) plotted for the smooth muscle cells from normal, sham, and obstruction groups. Data showed the means ± SE *<i>P</i><0.01 versus sham and normal groups.</p
The hypertrophy of smooth muscle cells induced by partial intestinal obstruction.
<p>A shows normal (a) and hypertrophic smooth muscle cells (b), the cell size was significantly enlarged in obstruction group. B shows the mean values of cell capacitances among normal, sham and obstruction groups. Data showed the means ± SE *P<0.01 versus sham and normal groups, *<i>P</i><0.05 versus normal and sham group, Bar = 100 µm.</p