208 research outputs found
High intensity study of THz detectors based on field effect transistors
Terahertz power dependence of the photoresponse of field effect transistors,
operating at frequencies from 0.1 to 3 THz for incident radiation power density
up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect
transistors and InGaAs high electron mobility transistors. The photoresponse
increased linearly with increasing radiation power up to kW/cm^2 range. The
saturation of the photoresponse was observed for all investigated field effect
transistors for intensities above several kW/cm^2. The observed signal
saturation is explained by drain photocurrent saturation similar to saturation
in direct currents output characteristics. The theoretical model of terahertz
field effect transistor photoresponse at high intensity was developed. The
model explains quantitatively experimental data both in linear and nonlinear
(saturation) range. Our results show that dynamic range of field effect
transistors is very high and can extend over more than six orderd of magnitudes
of power densities (from 0.5 mW/cm^2 to 5 kW/cm^2)
High performance bilayer-graphene Terahertz detectors
We report bilayer-graphene field effect transistors operating as THz
broadband photodetectors based on plasma-waves excitation. By employing
wide-gate geometries or buried gate configurations, we achieve a responsivity
and a noise equivalent power in the 0.29-0.38 THz range, in photovoltage and photocurrent mode.
The potential of this technology for scalability to higher frequencies and the
development of flexible devices makes our approach competitive for a future
generation of THz detection systems.Comment: 8 pages, 5 figures. Submitted to Applied Physics Letter
Stress in adults with congenital heart disease : preliminary results on anxiety, life events, coping and socioeconomic factors (RCD code: IV)
We performed pilot analysis of the anxiety level, frequency of life events and their interactions among adults with congenital heart disease (CHD), and evaluated their coping strategies and socioeconomic functioning. In a cross-sectional questionnaire study on 30 consecutive ambulatory patients with CHD we addressed these issues by a custom-designed tool incorporating state-anxiety scale of the State-Trait Anxiety Inventory, the brief-COPE questionnaire (Polish versions) and 10 selected life events. We found that state-anxiety level adjusted for sex, age and life events di ered by CHD defect category (R2 = 0,51; p<0,001). Other factors are characterized and brie y discussed. JRCD 2014; 1 (6): 10-1
Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
Resonant frequencies of the two-dimensional plasma in FETs increase with the
reduction of the channel dimensions and can reach the THz range for sub-micron
gate lengths. Nonlinear properties of the electron plasma in the transistor
channel can be used for the detection and mixing of THz frequencies. At
cryogenic temperatures resonant and gate voltage tunable detection related to
plasma waves resonances, is observed. At room temperature, when plasma
oscillations are overdamped, the FET can operate as an efficient broadband THz
detector. We present the main theoretical and experimental results on THz
detection by FETs in the context of their possible application for THz imaging.Comment: 22 pages, 12 figures, review pape
Graphene Composites as Efficient Electromagnetic Absorbers in the Extremely High Frequency Band
We report on the synthesis of the epoxy-based composites with graphene
fillers and testing their electromagnetic shielding efficiency by the
quasi-optic free-space method in the extremely high frequency (EHF) band (220 -
325 GHz). The curing adhesive composites were produced by a scalable technique
with a mixture of single-layer and few-layer graphene layers of a few-micron
lateral dimensions. It was found that the electromagnetic transmission, T, is
low even at small concentrations of graphene fillers: T<1% at frequency of 300
GHz for a composite with only 1 wt% of graphene. The main shielding mechanism
in composites with the low graphene loading is absorption. The composites of 1
mm thickness and graphene loading of 8 wt% provide excellent electromagnetic
shielding of 70 dB in the sub-terahertz EHF frequency with negligible energy
reflection to the environment. The developed lightweight adhesive composites
with graphene fillers can be used as electromagnetic absorbers in the
high-frequency microwave radio relays, microwave remote sensors, millimeter
wave scanners, and wireless local area networks.Comment: 28 pages, 6 figure
Room Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures
We report on experimental studies of terahertz (THz) radiation transmission
through grating-gate graphene-channel transistor nanostructures and demonstrate
room temperature THz radiation amplification stimulated by current-driven
plasmon excitations. Specifically, with increase of the direct current (dc)
under periodic charge density modulation, we observe a strong red shift of the
resonant THz plasmon absorption, its complete bleaching, followed by the
amplification and blue shift of the resonant plasmon frequency. Our results
are, to the best of our knowledge, the first experimental observation of energy
transfer from dc current to plasmons leading to THz amplification. We present a
simple model allowing for the phenomenological description of the observed
amplification phenomena. This model shows that in the presence of dc current
the radiation-induced correction to dissipation is sensitive to the phase shift
between THz oscillations of carrier density and drift velocity, and with
increase of the current becomes negative, leading to amplification. The
experimental results of this work as all obtained at room temperature, pave the
way towards the new 2D plasmons based, voltage tuneable THz radiation
amplifiers.Comment: 17 pages with 15 figures, uses revtex4-2, additionally include 6
pages of supplementary materials with 6 figure
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