39 research outputs found

    Quantum Transport Study in 3D Topological Insulators Nanostructures

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    In this thesis, we investigate the quantum transport properties of disordered three dimensional topological insulator (3DTI) nanostructures of BiSe and BiTe in detail. Despite their intrinsic bulk conductivity, we show the possibility to study the specific transport properties of the topological surface states (TSS), either with or without quantum confinement. Importantly, we demonstrate that unusual transport properties not only come from the Dirac nature of the quasi-particles, but also from their spin texture. Without quantum confinement (wide ribbons), the transport properties of diffusive 2D spin-helical Dirac fermions are investigated. Using high magnetic fields allows us to measure and separate all contributions to charge transport. Band bending is investigated in BiSe nanostructures, revealing an inversion from upward to downward bending when decreasing the bulk doping. This result points out the need to control simultaneously both the bulk and surface residual doping in order to produce bulk-depleted nanostructures and to study TSS only. Moreover, Shubnikov-de-Haas oscillations and transconductance measurements are used to measure the ratio of the transport length to the electronic mean free path ltr/le. This ratio is measured to be close to one for bulk states, whereas it is close to 8 for TSS, which is a hallmark of the anisotropic scattering of spin-helical Dirac fermions. With transverse quantum confinement (narrow wires or ribbons), the ballistic transport of quasi-1D surface modes is evidenced by mesoscopic transport measurements, and specific properties due to their topological nature are revealed at very low temperatures. The metallic surface states are directly evidenced by the measure of periodic Aharonov-Bohm oscillations (ABO) in 3DTI nanowires. Their exponential temperature dependence gives an unusual power-law temperature dependence of the phase coherence length, which is interpreted in terms of quasi-ballistic transport and decoherence in the weak-coupling regime. This remarkable finding is a consequence of the enhanced transport length, which is comparable to the perimeter. Besides, the ballistic transport of quasi-1D surface modes is further evidenced by the observation of non-universal conductance fluctuations in a BiSe nanowire, despite the long-length limit (L > ltr) and a high metallicity (many modes). We show that such an unusual property for a mesoscopic conductor is related to the limited mixing of the transverse modes by disorder, as confirmed by numerical calculations. Importantly, a model based on the modes' transmissions allows us to describe our experimental results, including the full temperature dependence of the ABO amplitude

    Band bending inversion in Bi2_2Se3_3 nanostructures

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    Shubnikov-de-Haas oscillations were studied under high magnetic field in Bi2_2Se3_3 nanostructures grown by Chemical Vapor Transport, for different bulk carrier densities ranging from 3×1019cm−33\times10^{19}\text{cm}^{-3} to 6×1017cm−36\times10^{17}\text{cm}^{-3}. The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density, as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states.Comment: 6 pages, 4 figure

    Low Magnetic Field Regime of a Gate-Defined Constriction in High-Mobility Graphene

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    We report on the evolution of the coherent electronic transport through a gate-defined constriction in a high-mobility graphene device from ballistic transport to quantum Hall regime upon increasing the magnetic field. At low field, the conductance exhibits Fabry-P\'erot resonances resulting from the npn cavities formed beneath the top-gated regions. Above a critical field B∗B^* corresponding to the cyclotron radius equal to the npn cavity length, Fabry-P\'erot resonances vanish and snake trajectories are guided through the constriction with a characteristic set of conductance oscillations. Increasing further the magnetic field allows us to probe the Landau level spectrum in the constriction, with distortions due to the combination of confinement and de-confinement of Landau levels in a saddle potential. These observations are confirmed by numerical calculations

    Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3

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    Linear magnetoresistance (LMR) is of particular interest for memory, electronics, and sensing applications, especially when it does not saturate over a wide range of magnetic fields. One of its principal origins is local mobility or density inhomogeneities, often structural, which in the Parish-Littlewood theory leads to an unsaturating LMR proportional to mobility. Structural disorder, however, also tends to limit the mobility and hence the overall LMR amplitude. An alternative route to achieve large LMR is via non-structural inhomogeneities which do not affect the zero field mobility, like magnetic domains. Here, linear positive magnetoresistance caused by magnetic texture is reported in \ch{LaTiO3}/\ch{SrTiO3} heterostructures. The LMR amplitude reaches up to 6500\% at 9T. This colossal value is understood by the unusual combination of a very high thin film mobility, up to 40 000 cm2^2/V.s, and a very large coverage of low-mobility regions. These regions correlate with a striped magnetic structure, compatible with a spiral magnetic texture in the \ch{LaTiO3} film, revealed by low temperature Lorentz transmission electron microscopy. These results provide a novel route for the engineering of large-LMR devices

    Observation of non-Hermitian topology in a multi-terminal quantum Hall device

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    Quantum devices characterized by non-Hermitian topology are predicted to show highly robust and potentially useful properties, but realizing them has remained a daunting experimental task. This is because non-Hermiticity is often associated with gain and loss, which would require precise tailoring to produce the signatures of nontrivial topology. Here, instead of gain/loss, we use the nonreciprocity of the quantum Hall edge states to directly observe non-Hermitian topology in a multi-terminal quantum Hall ring. Our transport measurements evidence a robust, non-Hermitian skin effect: currents and voltages show an exponential profile, which persists also across Hall plateau transitions away from the regime of maximum non-reciprocity. Our observation of non-Hermitian topology in a quantum device introduces a scalable experimental approach to construct and investigate generic non-Hermitian systems

    Saturation of the anomalous Hall effect at high magnetic fields in altermagnetic RuO2

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    Observations of the anomalous Hall effect in RuO2_2 and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in MnTe the unconventional anomalous Hall signal accompanied by a vanishing magnetization is observable at remanence, the anomalous Hall effect in RuO2_2 is excluded by symmetry for the N\'eel vector pointing along the zero-field [001] easy-axis. Guided by a symmetry analysis and ab initio calculations, a field-induced reorientation of the N\'eel vector from the easy-axis towards the [110] hard-axis was used to demonstrate the anomalous Hall signal in this altermagnet. We confirm the existence of an anomalous Hall effect in our RuO2_2 thin-film samples whose set of magnetic and magneto-transport characteristics is consistent with the earlier report. By performing our measurements at extreme magnetic fields up to 68 T, we reach saturation of the anomalous Hall signal at a field Hc≃H_{\rm c} \simeq 55 T that was inaccessible in earlier studies, but is consistent with the expected N\'eel-vector reorientation field.Comment: 4 figure
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