Memristive devices based on single ZnO nanowires-from material synthesis to neuromorphic functionalities

Memristive and resistive switching devices are considered promising building blocks for the realization of artificial neural networks and neuromorphic systems. Besides conventional top-down memristive devices based on thin films, resistive switching devices based on nanowires (NWs) have attracted great attention, not only for the possibility of going beyond current scaling limitations of the top-down approach, but also as model systems for the localization and investigation of the physical mechanism of switching. This work reports on the fabrication of memristive devices based on ZnO NWs, from NW synthesis to single NW-based memristive cell fabrication and characterization. The bottom-up synthesis of ZnO NWs was performed by low-pressure chemical vapor deposition according to a self-seeding vapor-solid (VS) mechanism on a Pt substrate over large scale (∼cm2), without the requirement of previous seed deposition. The grown ZnO NWs are single crystalline with wurtzite crystal structure and are vertically aligned respect to the growth substrate. Single NWs were then contacted by means of asymmetric contacts, with an electrochemically active and an electrochemically inert electrode, to form NW-based electrochemical metallization memory cells that show reproducible resistive switching behaviour and neuromorphic functionalities including short-term synaptic plasticity and paired pulse facilitation. Besides representing building blocks for NW-based memristive and neuromorphic systems, these single crystalline devices can be exploited as model systems to study physicochemical processing underlaying memristive functionalities thanks to the high localization of switching events on the ZnO crystalline surface

Structure-Dependent Influence of Moisture on Resistive Switching Behavior of ZnO Thin Films

Resistive switching mechanisms underlying memristive devices are widely investigated, and the importance as well as influence of ambient conditions on the electrical performances of memristive cells are already recognized. However, detailed understanding of the ambient effect on the switching mechanism still remains a challenge. This work presents an experimental investigation on the effect of moisture on resistive switching performances of ZnO-based electrochemical metallization memory cells. ZnO thin films are grown by chemical vapor deposition (CVD) and radio frequency sputtering. Water molecules are observed to influence electrical resistance of ZnO by affecting the electronic conduction mechanism and by providing additional species for ionic conduction. By influencing dissolution and migration of ionic species underlying resistive switching events, moisture is reported to tune resistive switching parameters. In particular, the presence of H2O is responsible for a decrease of the forming and SET voltages and an increase of the ON/OFF resistance ratio in both CVD and sputtered films. The effect of moisture on resistive switching performance is found to be more pronounced in case of sputtered films where the reduced grain size is responsible for an increased adsorption of water molecules and an increased amount of possible pathways for ion migration

Memristive devices as a potential resistance standard

The EMPIR [1] project 20FUN06 MEMQuD --- “Memristive devices as quantum standard for nanometrology” [2] has as one of its fundamental goals the development of technical capability and scientific knowledge for the implementation of a quantum resistance standard based on memristive devices characterized by high scalability down to the nanometer scale, CMOS compatibility and working in air at room temperature. In this work it is presented an overview of the project and highlighted relevant characteristics and working principles of memristive devices, applications as well as the last revision of the International System of Units (SI) that is the motivation and background for the aim of this project

НЕКОТОРЫЕ ОСОБЕННОСТИ МОРФОФУНКЦИОНАЛЬНОГО СОСТОЯНИЯ ТРОМБОЦИТОВ ПЕРИФЕРИЧЕСКОЙ КРОВИ ДОНОРОВ И РЕЦИПИЕНТОВ ПОЧЕЧНОГО АЛЛОТРАНСПЛАНТАТА

The morphofunctional status of peripheral blood platelets from 16 recipients, 16 optimal and 16 marginal donors renal allograft were investigated by method of vital computer phase morphometry (phase-interference microscope «Cytoscan»). The abnormality of platelet hemostasis was found out in recipients and potential renal allograft donors. Such hemostasis damages can promote the thrombotic complications and failure of microcirculation in renal parenchymatous tissue. Методом витальной компьютерной фазовой морфометрии (фазово-интерференционный микроскоп «Ци- тоскан») исследовали состояние тромбоцитарного звена гемостаза 16 реципиентов, 16 оптимальных и 16 маргинальных доноров ПАТ. Установлено, что как у доноров, так и у реципиентов ПАТ имеются на- рушения клеточного звена гемостаза, которые могут оказывать определенное влияние на функциониро- вание пересаженного органа, провоцировать развитие тромботических осложнений и нарушение микро- циркуляции в паренхиме почки.

Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

Quantum effects in novel functional materials and new device concepts represent a potential breakthrough for the development of new information processing technologies based on quantum phenomena. Among the emerging technologies, memristive elements that exhibit resistive switching, which relies on the electrochemical formation/rupture of conductive nanofilaments, exhibit quantum conductance effects at room temperature. Despite the underlying resistive switching mechanism having been exploited for the realization of next-generation memories and neuromorphic computing architectures, the potentialities of quantum effects in memristive devices are still rather unexplored. Here, a comprehensive review on memristive quantum devices, where quantum conductance effects can be observed by coupling ionics with electronics, is presented. Fundamental electrochemical and physicochemical phenomena underlying device functionalities are introduced, together with fundamentals of electronic ballistic conduction transport in nanofilaments. Quantum conductance effects including quantum mode splitting, stability, and random telegraph noise are analyzed, reporting experimental techniques and challenges of nanoscale metrology for the characterization of memristive phenomena. Finally, potential applications and future perspectives are envisioned, discussing how memristive devices with controllable atomic-sized conductive filaments can represent not only suitable platforms for the investigation of quantum phenomena but also promising building blocks for the realization of integrated quantum systems working in air at room temperature.status: publishe

Interactive models of communication at the nanoscale using nanoparticles that talk to one another

[EN] 'Communication' between abiotic nanoscale chemical systems is an almost-unexplored field with enormous potential. Here we show the design and preparation of a chemical communication system based on enzyme-powered Janus nanoparticles, which mimics an interactive model of communication. Cargo delivery from one nanoparticle is governed by the biunivocal communication with another nanoparticle, which involves two enzymatic processes and the interchange of chemical messengers. The conceptual idea of establishing communication between nanodevices opens the opportunity to develop complex nanoscale systems capable of sharing information and cooperating.A. L.-L. is grateful to 'La Caixa' Banking Foundation for his PhD fellowship. We wish to thank the Spanish Government (MINECO Projects MAT2015-64139-C4-1, CTQ2014-58989-P and CTQ2015-71936-REDT and AGL2015-70235-C2-2-R) and the Generalitat Valenciana (Project PROMETEOII/2014/047) for support. 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Standards for the Characterization of Endurance in Resistive Switching Devices

Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products