560 research outputs found
Double-gated graphene-based devices
We discuss transport through double gated single and few layer graphene
devices. This kind of device configuration has been used to investigate the
modulation of the energy band structure through the application of an external
perpendicular electric field, a unique property of few layer graphene systems.
Here we discuss technological details that are important for the fabrication of
top gated structures, based on electron-gun evaporation of SiO. We perform
a statistical study that demonstrates how --contrary to expectations-- the
breakdown field of electron-gun evaporated thin SiO films is comparable to
that of thermally grown oxide layers. We find that a high breakdown field can
be achieved in evaporated SiO only if the oxide deposition is directly
followed by the metallization of the top electrodes, without exposure to air of
the SiO layer.Comment: Replaced with revised version. To appear on New Journal of Physic
Electronic transport properties of few-layer graphene materials
Since the discovery of graphene -a single layer of carbon atoms arranged in a
honeycomb lattice - it was clear that this truly is a unique material system
with an unprecedented combination of physical properties. Graphene is the
thinnest membrane present in nature -just one atom thick- it is the strongest
material, it is transparent and it is a very good conductor with room
temperature charge mobilities larger than the typical mobilities found in
silicon. The significance played by this new material system is even more
apparent when considering that graphene is the thinnest member of a larger
family: the few-layer graphene materials. Even though several physical
properties are shared between graphene and its few-layers, recent theoretical
and experimental advances demonstrate that each specific thickness of few-layer
graphene is a material with unique physical properties.Comment: 26 pages, 8 figure
Spin configurations in circular and rectangular vertical quantum dots in a magnetic field: Three-dimensional self-consistent simulation
The magnetic field dependence of the electronic properties of \textit{real}
single vertical quantum dots in circular and rectangular mesas is investigated
within a full three-dimensional multiscale self-consistent approach without any
{\it \'a priori} assumptions about the shape and strength of the confinement
potential. The calculated zero field electron addition energies are in good
agreement with available experimental data for both mesa geometries. Charging
diagrams in a magnetic field for number of electrons up to five are also
computed. Consistent with the experimental data, we found that the charging
curves for the rectangular mesa dot in a magnetic field are flatter and exhibit
less features than for a circular mesa dot. Evolution of the singlet-triplet
energy separation in the two electron system for both dot geometries in
magnetic field was also investigated. In the limit of large field, beyond the
singlet-triplet transition, the singlet-triplet energy difference continues to
become more negative in a circular mesa dot without any saturation within the
range of considered magnetic fields whilst it is predicted to asymptotically
approach zero for the rectangular mesa dot. This different behavior is
attributed to the symmetry "breaking" that occurs in the singlet wave-functions
in the rectangular mesa dot but not in the circular one.Comment: 12 pages, 8 gifure
Semiconductor quantum dots for electron spin qubits
We report on our recent progress in applying semiconductor quantum dots for spin-based quantum computation, as proposed by Loss and DiVincenzo (1998 Phys. Rev. A 57 120). For the purpose of single-electron spin resonance, we study different types of single quantum dot devices that are designed for the generation of a local ac magnetic field in the vicinity of the dot. We observe photon-assisted tunnelling as well as pumping due to the ac voltage induced by the ac current driven through a wire in the vicinity of the dot, but no evidence for ESR so far. Analogue concepts for a double quantum dot and the hydrogen molecule are discussed in detail. Our experimental results in laterally coupled vertical double quantum dot device show that the Heitler–London model forms a good approximation of the two-electron wavefunction. The exchange coupling constant J is estimated. The relevance of this system for two-qubit gates, in particular the SWAP operation, is discussed. Density functional calculations reveal the importance of the gate electrode geometry in lateral quantum dots for the tunability of J in realistic two-qubit gates
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