Two-dimensional photonic crystal resist membrane nanocavity embedding colloidal dot-in-a-rod nanocrystals.

A novel technique for the fabrication of photonic crystal (PC) nanocavities coupled with colloidal nanocrystals is presented. A waveguiding resist membrane embedding highly emitting dot-in-a-rod nanocrystals was patterned through e-beam lithography and released through wet etching process. The proposed approach makes the PC structure independent of fabrication imperfections induced by etching steps. Micro-photoluminescence spectra revealed degenerated resonant modes (Q-factor ∼700) whose fabrication-induced spectral splitting is comparable to the full width at half-maximum of the peaks. Active nanocavities tunable from visible to infrared spectral range on GaAs or Si substrates can be easily implemented by this technique

Lasing oscillation in a three-dimensional photonic crystal nanocavity with a complete bandgap

We demonstrate lasing oscillation in a three-dimensional photonic crystal nanocavity. The laser is realized by coupling a cavity mode, which is localized in a complete photonic bandgap and exhibits the highest quality factor of ~38,500, with high-quality semiconductor quantum dots. We show a systematic change in the laser characteristics, including the threshold and the spontaneous emission coupling factor by controlling the crystal size, which consequently changes the strength of photon confinement in the third dimension. This opens up many interesting possibilities for realizing future ultimate light sources and three-dimensional integrated photonic circuits and for more fundamental studies of physics in the field of cavity quantum electrodynamics.Comment: 14 pages, 4 figure

Design of Photonic Crystals by FDTD Method and Fabrication of High-Q Three-Dimensional Photonic Crystal Nanocavities

報告番号: 甲24585 ; 学位授与年月日: 2009-03-23 ; 学位の種別: 課程博士 ; 学位の種類: 博士(工学) ; 学位記番号: 博工第7019号 ; 研究科・専攻: 工学系研究科電子工学専

Design of Photonic Crystal Nanocavities for Highly-Efficient Surface-Emitting Light Sources

報告番号: ; 学位授与年月日: 2006-03-23 ; 学位の種別: 修士 ; 学位の種類: 修士(工学) ; 学位記番号: ; 研究科・専攻: 工学系研究科電子工学専

Raman peak shifts by applied magnetic field in InSb/Al x In1−x Sb superlattices

InSb/Al _x ln _1− _x Sb superlattices (SLs) are grown by molecular beam epitaxy on (001) InSb substrate and Raman scattering spectroscopy of the samples under magnetic field is investigated. Al contents in AlInSb of the samples are varied. All samples are characterized by atomic force microscopy (AFM), X-ray diffraction and Raman scattering spectroscopy. The Raman spectroscopy is done by using excitation laser with 633 nm wavelength and 2 μ m beam spot under applied magnetic field from 0 to 170 mT. Both TO and LO Raman peaks from InSb are detected from all samples. There are Raman peak shift of both TO and LO by applied magnetic field. Stronger magnetic effect is found in LO than TO phonon modes. We attribute this effect to the symmetry breaking of the InSb/AlInSb interfaces since the observed roughness of the top InSb layer can qualitatively correlate with the shift