2,264 research outputs found

    Lunar radar measurements of the earth's magnetospheric wake Scientific report no. 11

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    Lunar radar echo measurments to determine size and electron density of earth magnetospheric wak

    Detection of highly ionized O and Ne absorption lines in the X-ray spectrum of 4U1820-303 in the globular cluster, NGC 6624

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    We searched for absorption lines of highly ionized O and Ne in the energy spectra of two Low-mass X-ray binaries, 4U1820-303 in the globular cluster NGC6624 and Cyg X-2, observed with the Chandra LETG, and detected O VII, O VIII and Ne IX absorption lines for 4U1820-303. The equivalent width of the O VII K alpha line was 1.19 +0.47/-0.30 eV (90 % errors) and the significance was 6.5 sigma. Absorption lines were not detected for Cyg X-2 with a 90 % upper limit on the equivalent width of 1.06 eV for O VII K alpha. The absorption lines observed in 4U1820-303 are likely due to hot interstellar medium, because O will be fully photo-ionized if the absorbing column is located close to the binary system. The velocity dispersion is restricted to b = 200 - 420 km/s from consistency between O VII K alpha and K beta lines, Ne/O abundance ratio, and H column density. The average temperature and the O VII density are respectively estimated to be log(T[K]) = 6.2 - 6.3 and n(OVII) = (0.7 - 2.3) x 10^{-6} cm^{-3}. The difference of O VII column densities for the two sources may be connected to the enhancement of the soft X-ray background (SXB) towards the Galactic bulge region. Using the polytrope model of hot gas to account for the SXB we corrected for the density gradient and estimated the midplane O VII density at the solar neighborhood. The scale height of hot gas is then estimated using the AGN absorption lines. It is suggested that a significant portion of both the AGN absorption lines and the high-latitude SXB emission lines can be explained by the hot gas in our Galaxy.Comment: Accepted for publication in ApJ. 7 pages, 9 eps figure

    Neural crest stem cells undergo multilineage differentiation in developing peripheral nerves to generate endoneurial fibroblasts in addition to Schwann cells

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    Neural crest stem cells (NCSCs) persist in peripheral nerves throughout late gestation but their function is unknown. Current models of nerve development only consider the generation of Schwann cells from neural crest, but the presence of NCSCs raises the possibility of multilineage differentiation. We performed Cre-recombinase fate mapping to determine which nerve cells are neural crest derived. Endoneurial fibroblasts, in addition to myelinating and non-myelinating Schwann cells, were neural crest derived, whereas perineurial cells, pericytes and endothelial cells were not. This identified endoneurial fibroblasts as a novel neural crest derivative, and demonstrated that trunk neural crest does give rise to fibroblasts in vivo, consistent with previous studies of trunk NCSCs in culture. The multilineage differentiation of NCSCs into glial and non-glial derivatives in the developing nerve appears to be regulated by neuregulin, notch ligands, and bone morphogenic proteins, as these factors are expressed in the developing nerve, and cause nerve NCSCs to generate Schwann cells and fibroblasts, but not neurons, in culture. Nerve development is thus more complex than was previously thought, involving NCSC self-renewal, lineage commitment and multilineage differentiation

    Multidrug-resistant enteroaggregative Escherichia coli associated with persistent diarrhea in Kenyan children.

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    To study the association of multidrug-resistant enteroaggregative Escherichia coli with persistent diarrhea in Kenyan children, stool specimens were obtained from 862 outpatients under 5 years of age from July 1991 to June 1993. E. coli O44 was identified as the sole bacterial pathogen in four patients experiencing at least 14 days of fever, vomiting, and diarrhea. Disk diffusion testing showed E. coli O44 resistance to tetracycline, ampicillin, erythromycin, trimethoprim-sulphamethoxazole, and amoxicillin/clavulanate and sensitivity to chloramphenicol, nalidixic acid, azithromycin, and cefuroxime. Further studies are needed to clarify the epidemiology, clinical spectrum, and pathogenesis of enteroaggregative E. coli infection

    Real space application of the mean-field description of spin glass dynamics

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    The out of equilibrium dynamics of finite dimensional spin glasses is considered from a point of view going beyond the standard `mean-field theory' versus `droplet picture' debate of the last decades. The main predictions of both theories concerning the spin glass dynamics are discussed. It is shown, in particular, that predictions originating from mean-field ideas concerning the violations of the fluctuation-dissipation theorem apply quantitatively, provided one properly takes into account the role of the spin glass coherence length which plays a central role in the droplet picture. Dynamics in a uniform magnetic field is also briefly discussed.Comment: 4 pages, 4 eps figures. v2: published versio

    A New Method to Map Flares in Quasars

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    Recently, Chartas et al. (2001) detected a rapid X-ray flare in the gravitationally lensed, multiple image quasar RX J0911.4+0551. Dramatic events, such as rapid X-ray flares, are useful in providing high precision measurements of the time delays between multiple images. In this paper, we argue that there is a new possibility in measurements of time delays between multiple images of gravitationally lensed quasars; constrain the locations of putative flares that give rise to the intrinsic rapid variabilities of quasars. The realization, however, of these goals cannot be presently achieved due to the limited accuracy of the current measurements. We predict that timing flares with accuracies of the order of a few seconds will be needed to probe the location of the flares. Our proposing method will work with better instruments in near future, such as XEUS.Comment: 22 pages (including 3 tables and 7 figures) Accepted to Ap

    Nuclear Shell Model Calculations of Neutralino-Nucleus Cross Sections for Silicon 29 and Germanium 73

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    We present the results of detailed nuclear shell model calculations of the spin-dependent elastic cross section for neutralinos scattering from \si29 and \ge73. The calculations were performed in large model spaces which adequately describe the configuration mixing in these two nuclei. As tests of the computed nuclear wave functions, we have calculated several nuclear observables and compared them with the measured values and found good agreement. In the limit of zero momentum transfer, we find scattering matrix elements in agreement with previous estimates for \si29 but significantly different than previous work for \ge73. A modest quenching, in accord with shell model studies of other heavy nuclei, has been included to bring agreement between the measured and calculated values of the magnetic moment for \ge73. Even with this quenching, the calculated scattering rate is roughly a factor of 2 higher than the best previous estimates; without quenching, the rate is a factor of 4 higher. This implies a higher sensitivity for germanium dark matter detectors. We also investigate the role of finite momentum transfer upon the scattering response for both nuclei and find that this can significantly change the expected rates. We close with a brief discussion of the effects of some of the non-nuclear uncertainties upon the matrix elements.Comment: 31 pages, figures avaiable on request, UCRL-JC-11408

    Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

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    Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored. Besides complexity, high defect densities and junction leakage currents present limitations in the approach. Motivated by this challenge, here we utilize an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on Si/SiO2 substrates. As a parallel to silicon-on-insulator (SOI) technology14,we use the abbreviation "XOI" to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsOx layer (~1 nm thick). The fabricated FETs exhibit an impressive peak transconductance of ~1.6 mS/{\mu}m at VDS=0.5V with ON/OFF current ratio of greater than 10,000 and a subthreshold swing of 107-150 mV/decade for a channel length of ~0.5 {\mu}m
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