749 research outputs found

    Capacitance of a Double-Heterojunction GaAs/AlGaAs Structure Subjected to In-Plane Magnetic Fields: Results of Self-Consistent Calculations

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    The capacitance of a double-heterojunction structure with a wide GaAs undoped layer embedded between two selectively doped AlGaAs barriers is calculated self-consistently as a function of intensity of the in-plane magnetic field. With increasing field intensity the capacitance initially increases and after reaching a maximum decreases toward a high field limit which is less than its zero field value. This behaviour is attributed to 'breathing', or charge redistribution, of the 2D electron gas at individual heterojunctions due to a combination of the confining potential and the magnetic field.Comment: LaTeX, 9 pages, 7 figs. available on request from [email protected] in 1 PS file (compressed and uuencoded

    Purely orbital diamagnetic to paramagnetic fluctuation of quasi two-dimensional carriers under in-plane magnetic field

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    An external magnetic field, HH, applied parallel to a quasi two-dimensional system modifies quantitatively and qualitatively the density of states. Using a self-consistent numerical approach, we study how this affects the entropy, SS, the free energy, FF, and the magnetization, MM, for different sheet carrier concentrations, NsN_s. As a prototype system we employ III-V double quantum wells. We find that although MM is mainly in the opposite direction of HH, the system is not linear. Surprisingly ∂M/∂H\partial M / \partial H swings between negative and positive values, i.e., we predict an entirely orbital diamagnetic to paramagnetic fluctuation. This phenomenon is important compared to the ideal de Haas-van Alphen effect i.e. the corresponding phenomenon under perpendicular magnetic field.Comment: 4 pages, 6 figure

    Self-Consistent Electron Subbands of Gaas/Algaas Heterostructure in Magnetic Fields Parallel to the Interface

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    The effect of strong magnetic fields parallel to GaAs/AlGaAs interface on the subband structure of a 2D electron layer is ivestigated theoretically. The system with two levels occupied in zero magnetic field is considered and the magnetic field induced depletion of the second subband is studied. The confining potential and the electron dispersion relations are calculated self-consistently, the electron- electron interaction is taken into account in the Hartree approximation.Comment: written in LaTeX, 8 pages, 4 figs. available on request from [email protected]
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