106 research outputs found

    Coupling of pinned magnetic moments in an antiferromagnet to a ferromagnet and its role for exchange bias

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    The interaction between uncompensated pinned magnetic moments within an antiferromagnetic (AFM) layer and an adjacent ferromagnetic (FM) layer responsible for the existence of exchange bias is explored in epitaxially grown trilayers of the form FM2/AFM/FM1 on Cu3Au(0 0 1) where FM1 is ~12 atomic monolayers (ML) Ni, FM2 is 21–25 ML Ni, and AFM is 27 ML or 50 ML Ni~25Mn~75. Field cooling for parallel or antiparallel alignment of the out-of-plane magnetizations of the two FM layers does not make a difference for the temperature-dependent coercivity (H C), magnitude of exchange bias field (H eb), AFM ordering temperature (T AFM), and blocking temperature for exchange bias (T b). We explain this by a model in which the uncompensated pinned magnetic moments distributed within the volume of the AFM layer interact with both of the FM layers, albeit with different strength. Parallel and antiparallel coupling between the magnetization of the pinned moments and the FM layers equally exists. This leads to the experimentally observed independence of H C, H eb, as well as of T AFM and T b on the magnetization direction of the FM layers during field cooling. These results provide new and detailed insight into revealing the subtle and complex nature of the exchange bias effect

    Growth-mode investigation of epitaxial EuS on InAs(100)

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    A persistent challenge in the field of spintronics is the search for suitable materials that enable the circumvention of the impedance mismatch preventing efficient spin-injection from metallic ferromagnetic conductors into semiconductors. One promising material is europium sulfide (EuS), a ferromagnetic semiconductor below the Curie temperature of 16.5 K. Investigation and optimization of the conditions required for high-quality growth of epitaxial EuS films on suitable substrates are thus of particular interest for the creation of efficient devices. We present the results of a growth-mode study employing atomic force microscopy and spot-profile analysis low-energy electron diffraction (SPA-LEED) of epitaxial EuS thin films deposited by electron-beam evaporation on InAs(100) substrates with varying combinations of, respectively, growth and annealing temperatures, Tg and Ta, from room temperature to 400 °C. We observed Stranski-Krastanov-like growth featuring low-roughness surfaces with root mean square values between 0.4 – 0.9 nm for all temperature combinations. An increased tendency for nucleation into grains and islands was observed for higher Ta from 300 – 400 °C. The corresponding nucleation mode, defined by varying degrees of 2D and 3D nucleation, was dependent on Tg. A 2D island growth mode was observed for Tg = 150 °C and Ta = 400 °C featuring a sharp and bright SPA-LEED pattern. This suggests the formation of a highly ordered, smooth surface for these growth conditions thereby providing a good starting point for optimization attempts for potential future devices

    The structural and electrical characterization of europium sulfide thin films prepared with E-beam evaporation

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    In this study, EuS thin films with varying thicknesses (15, 25, and 50 nm) were deposited onto a Si/SiO2 substrate using e-beam evaporation. Subsequently, two Ag contact electrodes with a 0.2 mm spacing were prepared via thermal evaporation using a shadow mask. To investigate the influence of film thickness and temperature on the electrical properties of EuS thin films, current-voltage (I–V) measurements were performed in a temperature range of 300–433 K for a voltage range of −2 V to +2 V. The I–V characteristics exhibited a temperature-dependent behavior, particularly showing an increase in current with rising temperature in the forward bias region. Furthermore, an improvement in the Schottky behavior was observed with increasing EuS film thickness. Additionally, the AC electrical and dielectric properties of the EuS thin film were examined in a frequency range of 4 Hz–8 MHz. Capacitance, conductance, impedance, and the Cole–Cole characteristic of EuS were analyzed in detail with respect to frequency, temperature, and film thicknesses

    Growth, Structure, and Magnetic Properties of Artificially Layered NiMn in Contact to Ferromagnetic Co on Cu3Au(001)

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    Single-crystalline antiferromagnetic artificially layered [Ni/Mn] films of different thicknesses, covered by ferromagnetic Co layers, are deposited on Cu3Au(001).Their structural and magnetic properties are characterized by low-energy electron diffraction (LEED) and magneto-optical Kerr effect, respectively, and compared with disordered NixMn100-x alloy films with the same Ni/Mn ratio and the same film thickness. LEED intensity-versus-energy curves show that the perpendicular inter-atomic lattice distance is decreased in the artificially layered [Ni/Mn] samples incomparison to the disordered NixMn100-x alloy films.At the same time, the artificially layered [Ni/Mn] films exhibit higher coercivity and exchange bias of the adjacent Co layer compared to those of NixMn100-x/Co. This is discussed as a consequence of the different interatomic lattice distance, presumably caused by an ordered buckling in the artificially layered [Ni/Mn] samples, leading to a stronger interlayer exchange coupling

    Growth of MnxAu1−x Films on Cu(001) and Ag(001) Single-Crystal Substrates

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    The growth, morphology, and structure of MnxAu1-x films on Cu(001) and Ag(001) are studied by means of low-energy electron diffraction (LEED), medium-energy electron diffraction, Auger electron spectroscopy, and scanning tunnelling microscopy. Different concentrations x from about 0.5 to 1 and thicknesses from0.2 to 12.9 ML of MnxAu1-x are examined. For several values of x, MnxAu1-x exhibits a c(2 x 2) superstructure pattern on Cu(001) when the total thickness is around or above 0.5 ML. Above 1 ML, LEED patterns of MnxAu1-x can be only observed on Ag(001), but not on Cu(001). LEED-I(V) is employed to deduce the vertical interlayer distance for as-grown and post-annealed films on Ag(001). Above 500 K, Ag from the substrate segregates into thefilms

    Interaktionsmechanismen und Magnetisierungsdynamik in ultradünnen antiferromagnetischen Filmen und deren Korrelation mit Struktur und Morphologie

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    In this thesis, by the means of Auger electron spectroscopy (AES), low energy electron diffraction (LEED), medium energy electron diffraction (MEED), X-ray absorption spectroscopy (XAS), magneto-optical Kerr effect (MOKE), and photoemission electron microscopy (PEEM) the structure and the magnetic properties of antiferromagnet (AFM) and ferrimagnetic material (FIM) films were investigated.In dieser Arbeit wird mit Hilfe von Augerelektronenspektroskopie (AES), Beugung niederenergetischer Elektronen (LEED), Beugung mittelenergetischer Elektronen (MEED), Röntgenabsorptionsspektroskopie (XAS), Magnetooptischem Kerr-Effekt (MOKE) und Photoemissionselektronenmikroskopie (PEEM) die Struktur sowie die magnetischen Eigenschaften von antiferromagnetischen (AFM) und ferrimagnetischen (FIM) Filmen untersucht

    The Structural and Electrical Characterization of Europium Sulfide Thin Films Prepared with E-Beam Evaporation

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    In this study, EuS thin films with varying thicknesses (15, 25, and 50 nm) were deposited onto a Si/SiO2 substrate using e-beam evaporation. Subsequently, two Ag contact electrodes with a 0.2 mm spacing were prepared via thermal evaporation using a shadow mask. To investigate the influence of film thickness and temperature on the electrical properties of EuS thin films, current-voltage (I–V) measurements were performed in a temperature range of 300–433 K for a voltage range of −2 V to +2 V. The I–V characteristics exhibited a temperature-dependent behavior, particularly showing an increase in current with rising temperature in the forward bias region. Furthermore, an improvement in the Schottky behavior was observed with increasing EuS film thickness. Additionally, the AC electrical and dielectric properties of the EuS thin film were examined in a frequency range of 4 Hz–8 MHz. Capacitance, conductance, impedance, and the Cole–Cole characteristic of EuS were analyzed in detail with respect to frequency, temperature, and film thicknesses

    Multi-Indicator and Geospatial Based Approaches for Assessing Variation of Land Quality in Arid Agroecosystems

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    Novel spatial models for appraising arable land resources using data processing techniques can increase insight into agroecosystem services. Hence, the principal component analysis (PCA), hierarchal cluster analysis (HCA), analytical hierarchy process (AHP), fuzzy logic, and geographic information system (GIS) were integrated to zone and map agricultural land quality in an arid desert area (Matrouh Governorate, Egypt). Satellite imageries, field surveys, and soil analyses were employed to define eighteen indicators for terrain, soil, and vegetation qualities, which were then reduced through PCA to a minimum data set (MDS). The original and MDS were weighted by AHP through experts’ opinions. Within GIS, the raster layers were generated, standardized using fuzzy membership functions (linear and non-linear), and assembled using arithmetic mean and weighted sum algorithms to produce eight land quality index maps. The soil properties (pH, salinity, organic matter, and sand), slope, surface roughness, and vegetation could adequately express the land quality. Accordingly, the HCA could classify the area into eight spatial zones with significant heterogeneity. Selecting salt-tolerant crops, applying leaching fraction, adopting sulfur and organic applications, performing land leveling, and using micro-irrigation are the most recommended practices. Highly significant (p < 0.01) positive correlations occurred among all the developed indices. Nevertheless, the coefficient of variation (CV) and sensitivity index (SI) confirmed the better performance of the index developed from the non-linearly scored MDS and weighted sum model. It could achieve the highest discrimination in land qualities (CV > 35%) and was the most sensitive (SI = 3.88) to potential changes. The MDS within this index could sufficiently represent TDS (R2 = 0.88 and Kappa statistics = 0.62), reducing time, effort, and cost for estimating the land performance. The proposed approach would provide guidelines for sustainable land-use planning in the studied area and similar regions
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