Vergleich der Bildqualitaet von CRT und LCD und Optimierung von Skalierungs-Algorithmen Ergaenzung zum Schlussbericht

SIGLEAvailable from TIB Hannover: F03B1604 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung und Forschung, Berlin (Germany)DEGerman

Boundary conditions for Density Gradient corrections in 3D Monte Carlo simulations

Monte Carlo remains an effective simulations methodology for the study of MOSFET devices well into the decananometre regime as it captures non-equilibrium and quasi-ballistic transport. The inclusion of quantum corrections further extends the usefulness of this technique without adding significant computational cost. In this paper we examine the impact of boundary conditions at the Ohmic contacts when Density Gradient based quantum corrections are implemented in a 3D Monte Carlo simulator. We show that Neumann boundary conditions lead to more stable and physically correct simulation results compared to the traditional use of Dirichlet boundary conditions

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

In this paper we compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from drift–diffusion to direct solutions of the Boltzmann-Transport-Equation with the Monte-Carlo method. Template devices representative of 22 nm Double-Gate and 32 nm Single-Gate Fully-Depleted Silicon-On-Insulator transistors were used as a common benchmark to highlight the differences between the quantitative predictions of different approaches. Using the standard scattering and mobility models for unstrained silicon channels and pure SiO2 dielectrics, the predictions of the different approaches for the 32 nm template are quite similar. Simulations of the 22 nm device instead, are much less consistent, particularly those achieved with MC simulators. Comparison with experimental data for a 32 nm device shows that the modeling approach used to explain the mobility reduction induced by the high-κ dielectric is critical. In the absence of a clear understanding of the impact of high-κ stack on transport, different models, all providing agreement with the experimental low-field mobility, predict quite different drain currents in saturation and in the sub-threshold region