Terrestrial solar thermionic energy conversion systems concept

Results obtained from studies of a (1) solar concentrator, (2) solar energy receiver - thermionic converter system, and (3) solar thermionic topping system are described. Peripheral subsystems, which are required for any solar energy conversion system, are also discussed

Gate-controlled generation of optical pulse trains using individual carbon nanotubes

We report on optical pulse-train generation from individual air-suspended carbon nanotubes under an application of square-wave gate voltages. Electrostatically-induced carrier accummulation quenches photoluminescence, while a voltage sign reversal purges those carriers, resetting the nanotubes to become luminescent temporarily. Frequency domain measurements reveal photoluminescence recovery with characteristic frequencies that increase with excitation laser power, showing that photoexcited carriers quench the emission in a self-limiting manner. Time-resolved measurements directly confirm the presence of an optical pulse train sychronized to the gate voltage signal, and flexible control over pulse timing and duration is demonstrated.Comment: 4 pages, 4 figure

Orbital selectivity of the kink in the dispersion of Sr2RuO4

We present detailed energy dispersions near the Fermi level on the monolayer perovskite ruthenate Sr2RuO4, determined by high-resolution angle-resolved photoemission spectroscopy. An orbital selectivity of the kink in the dispersion of Sr2RuO4 has been found: A kink for the Ru 4d_xy orbital is clearly observed, but not for the Ru 4d_yz and 4d_zx ones. The result provides insight into the origin of the kink.Comment: 5 pages, 4 figures. Accepted for publication in Phys. Rev.

Electronic structures of Cr1−δ_{1-\delta}X (X=S, Te) studied by Cr 2p soft x-ray magnetic circular dichroism

Cr 2p core excited XAS and XMCD spectra of ferromagnetic Cr$_{1-\delta}$Te with several concentrations of $\delta$=0.11-0.33 and ferrimagnetic Cr$_{5}$S$_{6}$ have been measured. The observed XMCD lineshapes are found to very weakly depend on $\delta$ for Cr$_{1-\delta}$Te. The experimental results are analyzed by means of a configuration-interaction cluster model calculation with consideration of hybridization and electron correlation effects. The obtained values of the spin magnetic moment by the cluster model analyses are in agreement with the results of the band structure calculation.The calculated result shows that the doped holes created by the Cr deficiency exist mainly in the Te 5porbital of Cr$_{1-\delta}$Te, whereas the holes are likely to be in Cr 3d state for Cr$_{5}$S$_{6}$.Comment: 8 pages, 6 figures, accepted for publication in Physical Review

MnAs dots grown on GaN(0001)-(1x1) surface

MnAs has been grown by means of MBE on the GaN(0001)-(1x1) surface. Two options of initiating the crystal growth were applied: (a) a regular MBE procedure (manganese and arsenic were delivered simultaneously) and (b) subsequent deposition of manganese and arsenic layers. It was shown that spontaneous formation of MnAs dots with the surface density of 1$\cdot 10^{11}$ cm$^{-2}$ and $2.5\cdot 10^{11}$ cm$^{-2}$, respectively (as observed by AFM), occurred for the layer thickness higher than 5 ML. Electronic structure of the MnAs/GaN systems was studied by resonant photoemission spectroscopy. That led to determination of the Mn 3d - related contribution to the total density of states (DOS) distribution of MnAs. It has been proven that the electronic structures of the MnAs dots grown by the two procedures differ markedly. One corresponds to metallic, ferromagnetic NiAs-type MnAs, the other is similar to that reported for half-metallic zinc-blende MnAs. Both system behave superparamagnetically (as revealed by magnetization measurements), but with both the blocking temperatures and the intra-dot Curie temperatures substantially different. The intra-dot Curie temperature is about 260 K for the former system while markedly higher than room temperature for the latter one. Relations between growth process, electronic structure and other properties of the studied systems are discussed. Possible mechanisms of half-metallic MnAs formation on GaN are considered.Comment: 20+ pages, 8 figure