Formation of three-particle clusters in hetero-junctions and MOSFET structures

A novel interaction mechanism in MOSFET structures and $GaAs/AlGaAs$ hetero-junctions between the zone electrons of the two-dimensional (2D) gas and the charged traps on the insulator side is considered. By applying a canonical transformation, off-diagonal terms in the Hamiltonian due to the trapped level subsystem are excluded. This yields an effective three-particle attractive interaction as well as a pairing interaction inside the 2D electronic band. A type of Bethe- Goldstone equation for three particles is studied to clarify the character of the binding and the energy of the three-particle bound states. The results are used to offer a possible explanation of the Metal-Insulator transition recently observed in MOSFET and hetero-junctions.Comment: 4 page

Deconstruction of the Trap Model for the New Conducting State in 2D

A key prediction of the trap model for the new conducting state in 2D is that the resistivity turns upwards below some characteristic temperature, $T_{\rm min}$. Altshuler, Maslov, and Pudalov have argued that the reason why no upturn has been observed for the low density conducting samples is that the temperature was not low enough in the experiments. We show here that $T_{\rm min}$ within the Altshuler, Maslov, and Pudalov trap model actually increases with decreasing density, contrary to their claim. Consequently, the trap model is not consistent with the experimental trends.Comment: Published version of Deconstructio

Quasi-permutable normal operators in octonion Hilbert spaces and spectra

Families of quasi-permutable normal operators in octonion Hilbert spaces are investigated. Their spectra are studied. Multiparameter semigroups of such operators are considered. A non-associative analog of Stone's theorem is proved.Comment: 20 page

Shubnikov-de Haas oscillations near the metal-insulator transition in a two-dimensional electron system in silicon

We have studied Shubnikov-de Haas oscillations in a two-dimensional electron system in silicon at low electron densities. Near the metal-insulator transition, only "spin" minima of the resistance at Landau-level filling factors 2, 6, 10, and 14 are seen, while the "cyclotron" minima at filling factors 4, 8, and 12 disappear. A simple explanation of the observed behavior requires a giant enhancement of the spin splitting near the metal-insulator transition.Comment: 4 pages, postscript figures include

Spin polarization of strongly interacting 2D electrons: the role of disorder

In high-mobility silicon MOSFET's, the $g^*m^*$ inferred indirectly from magnetoconductance and magnetoresistance measurements with the assumption that $g^*\mu_BH_s=2E_F$ are in surprisingly good agreement with $g^*m^*$ obtained by direct measurement of Shubnikov-de Haas oscillations. The enhanced susceptibility $\chi^* \propto (g^*m^*)$ exhibits critical behavior of the form $\chi^* \propto (n - n_0)^{-\alpha}$. We examine the significance of the field scale $H_s$ derived from transport measurements, and show that this field signals the onset of full spin polarization only in the absence of disorder. Our results suggest that disorder becomes increasingly important as the electron density is reduced toward the transition.Comment: 4 pages, 3 figure

Metal-insulator transition in disordered 2DEG including temperature effects

We calculate self-consistently the mutual dependence of electron correlations and electron-defect scattering for a two dimensional electron gas at finite temperature. We employ an STLS approach to calculate the electron correlations while the electron scattering rate off Coulombic impurities and surface roughness is calculated using self-consistent current-relaxation theory. The methods are combined and self-consistently solved. We discuss a metal-insulator transition for a range of disorder levels and electron densities. Our results are in good agreement with recent experimental observations.Comment: 4 pages, RevTeX + epsf, 5 figure

Ground state properties of the 2D disordered Hubbard model

We study the ground state of the two-dimensional (2D) disordered Hubbard model by means of the projector quantum Monte Carlo (PQMC) method. This approach allows us to investigate the ground state properties of this model for lattice sizes up to $10 \times 10$, at quarter filling, for a broad range of interaction and disorder strengths. Our results show that the ground state of this system of spin-1/2 fermions remains localised in the presence of the short-ranged Hubbard interaction.Comment: 7 pages, 9 figure

Dephasing and Metal-Insulator Transition

The metal-insulator transition (MIT) observed in two-dimensional (2D) systems is apparently contradictory to the well known scaling theory of localization. By investigating the conductance of disordered one-dimensional systems with a finite phase coherence length, we show that by changing the phase coherence length or the localization length, it is possible to observe the transition from insulator-like behavior to metal-like behavior, and the transition is a crossover between the quantum and classical regimes. The resemblance between our calculated results and the experimental findings of 2D MIT suggests that the observed metallic phase could be the result of a finite dephasing rate.Comment: 10 figures, to be published in Phys. Rev. B63, Jan. 15, (2000

Sharp increase of the effective mass near the critical density in a metallic 2D electron system

We find that at intermediate temperatures, the metallic temperature dependence of the conductivity \sigma(T) of 2D electrons in silicon is described well by a recent interaction-based theory of Zala et al. (Phys. Rev. B 64, 214204 (2001)). The tendency of the slope d\sigma/dT to diverge near the critical electron density is in agreement with the previously suggested ferromagnetic instability in this electron system. Unexpectedly, it is found to originate from the sharp enhancement of the effective mass, while the effective Lande g factor remains nearly constant and close to its value in bulk silicon

Comparative evaluation of the biological properties of bone bioimplants Tutoplast® and bioactive ceramic material "Syntekost" when implanted in the middle ear in the experiment

Background. Trepanation cavity formed during sanitizing operation subsequently leads to a recurrence of inflammation in the middle ear cavity. A special importance in mastoidoplastics is to eliminate the postoperative cavity. One of the current problems is to create an alternative plastic material that could be used for healing of the bone defect with the newly formed bone tissue without causing further injury to the patient. Objective. The purpose of this study was to investigate and compare the features of reparative processes of bone implant Tutoplast® and bioactive ceramic material "Sintekost" as well as to assess the reaction of the inner ear to the materials which were replanted into the tympanic bullae of guinea pigs while creating an experimental model of antromastoidotomy. Methods. Experimental studies were carried out on 72 male guinea pigs of 300-400 g. Depending on the used plastic material animals were divided into 3 groups. Studies were performed on the left ear of the animal, the right ear was used as a control. Animals were withdrawn from the experiment on the 14th, 30th, 90th, 120th, 330th day. To evaluate the results of the study common histological methods were used. Results. After implanting of bioactive ceramic material "Sintekost" into tympanic bullae of guinea pigs signs of resorption of the material were mild and these processes were not always accompanied by the formation of bone tissue. The newly formed bone trabeculae were not observed until 90 day. After implanting cancellous bone crumbs "Tutoplast" into tympanic bullae of guinea pigs the initiation of osteogenesis was observed on the one hand and the resorption of bone fragments on the other. This resulted in formation of newly formed bone tissue whose volume gradually grew, filling the cavity of the tympanic bullae in that area. Implant "Tutoplast" possessed osteoplastic properties, which contributed to the growth of bone, acting as a matrix on which bone islands were formed. In none of the experimental cases after implanting of this material into the tympanic bullae of guinea pigs inflammation was observed which may have led to suppuration or ototoxic effects on the structures of the inner ear. Conclusion. The experimental studies showed that the transformation of bone implant Tutoplast® occurred more actively and to a greater extent than that of bioactive ceramic material "Sintekost". In none of the experimental cases after implanting this material into the tympanic bullae of guinea pigs inflammation was observed. Citation: Kravchenko SV, Zaporoschenko AYu, Savitskaya IM. [Comparative evaluation of the biological properties of bone bioimplants Tutoplast® and bioactive ceramic material "Syntekost" when implanted in the middle ear in the experiment]. Morphologia. 2014;8(3):35-41. Russian