Spin transfer switching of spin valve nanopillars using nanosecond pulsed currents

Spin valve nanopillars are reversed via the mechanism of spin momentum transfer using current pulses applied perpendicular to the film plane of the device. The applied pulses were varied in amplitude from 1.8 mA to 7.8 mA, and varied in duration within the range of 100 ps to 200 ns. The probability of device reversal is measured as a function of the pulse duration for each pulse amplitude. The reciprocal pulse duration required for 95% reversal probability is linearly related to the pulse current amplitude for currents exceeding 1.9 mA. For this device, 1.9 mA marks the crossover between dynamic reversal at larger currents and reversal by thermal activation for smaller currents

Thermal Relaxation Rates of Magnetic Nanoparticles in the Presence of Magnetic Fields and Spin-Transfer Effects

We have measured the relaxation time of a thermally unstable ferromagnetic nanoparticle incorporated into a magnetic tunnel junction (MTJ) as a function of applied magnetic field, voltage V (-0.38 V < V < +0.26 V), and temperatures (283 K< T< 363 K) . By analyzing the results within the framework of a modified N\'eel-Brown formalism we determine the effective attempt time of the nanoparticle and also the bias dependences of the in-plane and out-of-plane spin torques. There is a significant linear modification of the effective temperature with voltage due to the in-plane torque and a significant contribution of a "field like" torque that is quadratic with voltage. The methods presented here do not require complicated models for device heating or calibration procedures, but instead directly measure how temperature, field, and voltage influence the energy landscape and thermal fluctuations of a two-state system. These results should have significant implications for designs of future nanometer-scale magnetic random access memory elements and provide a straightforward methodology to determine these parameters in other MTJ device structures

Adjusting magnetic nanostructures for high-performance magnetic sensors

The magnetic properties of the soft ferromagnetic layer in magnetic tunnel junctions are one of key factors to determine the performance of magnetoresistance sensors. We use a three-step orthogonal annealing procedure to modify the nanostructures of the free layer in the magnetic tunnel junction to control features such as magnetization reversal, coercivity, exchange field, and tunnel magnetoresistance ratio. We present a sensor with an improved sensitivity as high as 3944%/mT. This magnetic sensor only dissipates 200 lW of power while operating under an applied voltage of 1V

Large T1 contrast enhancement using superparamagnetic nanoparticles in ultra-low field MRI

Superparamagnetic iron oxide nanoparticles (SPIONs) are widely investigated and utilized as magnetic resonance imaging (MRI) contrast and therapy agents due to their large magnetic moments. Local field inhomogeneities caused by these high magnetic moments are used to generate T2 contrast in clinical high-field MRI, resulting in signal loss (darker contrast). Here we present strong T1 contrast enhancement (brighter contrast) from SPIONs (diameters from 11 nm to 22 nm) as observed in the ultra-low field (ULF) MRI at 0.13 mT. We have achieved a high longitudinal relaxivity for 18 nm SPION solutions, r1 = 615 s−1 mM−1, which is two orders of magnitude larger than typical commercial Gd-based T1 contrast agents operating at high fields (1.5 T and 3 T). The significantly enhanced r1 value at ultralow fields is attributed to the coupling of proton spins with SPION magnetic fluctuations (Brownian and Néel) associated with a low frequency peak in the imaginary part of AC susceptibility (χ”). SPION-based T1-weighted ULF MRI has the advantages of enhanced signal, shorter imaging times, and iron-oxidebased nontoxic biocompatible agents. This approach shows promise to become a functional imaging technique, similar to PET, where low spatial resolution is compensated for by important functional information