An SiGe/Si Heterojunction Phototransistor for Opto-Microwave Applications:Modeling and first Experimental Results

A first SiGe bipolar heterojunction phototransistor developed in a commercial available SiGe/Si technology is presented.Emphasis on the development of a complete numerical model for the simulation of strained- SiGe based devices is given.The SiGe HPT exhibits a dc opto-microwave power gain of 3.46dB,i.e.a responsivity with 50Ohms loads of 1.49A/W,and a –3dB bandwidth of 0.4GHz at 940nm.Power budgets are drawn with the use of the opto-microwave power gain ’s monogram chart

Optical absorption coefficient determination and physical modelling of strained SiGe/Si photodetectors

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Réalisation de macro composants hyperfréquences en technologie monolithique

Trois exemples de réalisation de fonctions hyperfréquences classiques en technologie monolithique sont présentées dans cet article. Il s'agit d'un commutateur SPDT (Single Pole Double Throw), d'un déphaseur analogique 0-360° en bande X ainsi que d'un amplificateur large bande 2-18 GHz. Les topologies retenues lors de la conception de ces circuits montrent les possibilités offertes par cette technologie et permettent d'obtenir des circuits performants caractérisés par une densité d'intégration élevée

Réalisation de macro composants hyperfréquences en technologie monolithique

Three monolithic microwave examples of standard macro-components are demonstrated. This paper reports the design, device fabrication and RF results of two X band circuits : a Single Pole Double Throw switch, an analog 0-360° phase shifter and a 2-18 GHz broadband amplifier. Specific monolithic designs are used to improve device performances and achieve a high level of integration.Trois exemples de réalisation de fonctions hyperfréquences classiques en technologie monolithique sont présentées dans cet article. Il s'agit d'un commutateur SPDT (Single Pole Double Throw), d'un déphaseur analogique 0-360° en bande X ainsi que d'un amplificateur large bande 2-18 GHz. Les topologies retenues lors de la conception de ces circuits montrent les possibilités offertes par cette technologie et permettent d'obtenir des circuits performants caractérisés par une densité d'intégration élevée

Frequency response enhancement of a single strained layer SiGe phototransistor basedon physical simulations

An original approach based on a physical model is used to evaluate opto-microwave performances of avertically illuminated single strained layer SiGe HPT. Analysis of optomicrowave performance is presented at 940nm. The contribution of each regionon the dynamic performances is studied. Frequency response enhancement is shown for base optical detection first and also by wavelength analysis while maintaining whole component detection. Increases up to a 9. 8 factor for the transition optical frequency (fTopt)in phototransistor mode are presented, reaching respectively 19.7 GHz and 15.3 GHz

A novel technique for obtaining LO and RF (LSB) Rejection in 25-40 GHz microwave up conversion mixers based on the concepts of distributed and double balanced mixing

In this paper a new configuration of up converter is presented. In this circuit, the LO and RF (LSB)frequencies are rejected thanks to a distributed and balanced circuit. Eight GaAs PHEMTs with a gate-length of 0.25 µm are used. A conversion gain of - 6 dB and a rejection over 6 dB on LO and RF (LSB) are obtained

Full noise characterization of microwave devices. Application to GaAlAs/GaAs TEGFET

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A Large-Signal Millimeter-wave InP/GaInAs Phototransistor Model: Method of Parameters Extraction and Maximum Gain Investigation

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A strained SiGe layer heterojunction bipolar phototransistor for short-range opto-microwave applications

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