Heavily Irradiated N-in-p Thin Planar Pixel Sensors with and without Active Edges

We present the results of the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150 $\mathrm{\mu}$m, produced at MPP/HLL, and 100-200 $\mathrm{\mu}$m thin active edge sensor devices, produced at VTT in Finland. These thin sensors are designed as candidates for the ATLAS pixel detector upgrade to be operated at the HL-LHC, as they ensure radiation hardness at high fluences. They are interconnected to the ATLAS FE-I3 and FE-I4 read-out chips. Moreover, the n-in-p technology only requires a single side processing and thereby it is a cost-effective alternative to the n-in-n pixel technology presently employed in the LHC experiments. High precision beam test measurements of the hit efficiency have been performed on these devices both at the CERN SpS and at DESY, Hamburg. We studied the behavior of these sensors at different bias voltages and different beam incident angles up to the maximum one expected for the new Insertable B-Layer of ATLAS and for HL-LHC detectors. Results obtained with 150 $\mathrm{\mu}$m thin sensors, assembled with the new ATLAS FE-I4 chip and irradiated up to a fluence of 4$\times$10$^{15}\mathrm{n}_{\mathrm{eq}}/\mathrm{cm}^2$, show that they are excellent candidates for larger radii of the silicon pixel tracker in the upgrade of the ATLAS detector at HL-LHC. In addition, the active edge technology of the VTT devices maximizes the active area of the sensor and reduces the material budget to suit the requirements for the innermost layers. The edge pixel performance of VTT modules has been investigated at beam test experiments and the analysis after irradiation up to a fluence of 5$\times$10$^{15}\mathrm{n}_{\mathrm{eq}}/\mathrm{cm}^2$ has been performed using radioactive sources in the laboratory.Comment: Proceedings for iWoRiD 2013 conference, submitted to JINS

Production and Characterisation of SLID Interconnected n-in-p Pixel Modules with 75 Micrometer Thin Silicon Sensors

The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It allows for stacking of different interconnected chip and sensor layers without destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs) this paves the way for vertical integration. Both technologies are combined in a pixel module concept which is the basis for the modules discussed in this paper. Mechanical and electrical parameters of pixel modules employing both SLID interconnections and sensors of 75 micrometer thickness are covered. The mechanical features discussed include the interconnection efficiency, alignment precision and mechanical strength. The electrical properties comprise the leakage currents, tuning characteristics, charge collection, cluster sizes and hit efficiencies. Targeting at a usage at the high luminosity upgrade of the LHC accelerator called HL-LHC, the results were obtained before and after irradiation up to fluences of $10^{16}$ $\mathrm{n}_{\mathrm{eq}}/\mathrm{cm}^2$ (1 MeV neutrons).Comment: 16 pages, 22 figure

Thin n-in-p pixel sensors and the SLID-ICV vertical integration technology for the ATLAS upgrade at the HL-LHC

The R&D activity presented is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors of different active thicknesses is studied, together with an investigation of a novel interconnection technique offered by the Fraunhofer Institute EMFT in Munich, the Solid-Liquid-InterDiffusion (SLID), which is an alternative to the standard solder bump-bonding. The pixel modules are based on thin n-in-p sensors, with an active thickness of 75 um or 150 um, produced at the MPI Semiconductor Laboratory (MPI HLL) and on 100 um thick sensors with active edges, fabricated at VTT, Finland. Hit efficiencies are derived from beam test data for thin devices irradiated up to a fluence of 4e15 neq/cm^2. For the active edge devices, the charge collection properties of the edge pixels before irradiation is discussed in detail, with respect to the inner ones, using measurements with radioactive sources. Beyond the active edge sensors, an additional ingredient needed to design four side buttable modules is the possibility of moving the wire bonding area from the chip surface facing the sensor to the backside, avoiding the implementation of the cantilever extruding beyond the sensor area. The feasibility of this process is under investigation with the FE-I3 SLID modules, where Inter Chip Vias are etched, employing an EMFT technology, with a cross section of 3 um x 10 um, at the positions of the original wire bonding pads.Comment: Proceedings for Pixel 2012 Conference, submitted to NIM A, 6 page

Interfaces Within Graphene Nanoribbons

We study the conductance through two types of graphene nanostructures: nanoribbon junctions in which the width changes from wide to narrow, and curved nanoribbons. In the wide-narrow structures, substantial reflection occurs from the wide-narrow interface, in contrast to the behavior of the much studied electron gas waveguides. In the curved nanoribbons, the conductance is very sensitive to details such as whether regions of a semiconducting armchair nanoribbon are included in the curved structure -- such regions strongly suppress the conductance. Surprisingly, this suppression is not due to the band gap of the semiconducting nanoribbon, but is linked to the valley degree of freedom. Though we study these effects in the simplest contexts, they can be expected to occur for more complicated structures, and we show results for rings as well. We conclude that experience from electron gas waveguides does not carry over to graphene nanostructures. The interior interfaces causing extra scattering result from the extra effective degrees of freedom of the graphene structure, namely the valley and sublattice pseudospins.Comment: 19 pages, published version, several references added, small changes to conclusion

Spontaneous Raman scattering for simultaneous measurements of in-cylinder species

A technique for multi-species mole fraction measurement in internal combustion engines is described. The technique is based on the spontaneous Raman scattering. It can simultaneously provide the mole fractions of several species of N-2, O-2, H2O, CO2 and fuel. Using the system, simultaneous measurement of air/fuel ratio and burnt residual gas are carried out during the mixture process in a Controlled Auto Ignition (CAI) combustion engine. The accuracy and consistency of the measured results were confirmed by the measured air fuel ratio using an exhaust gas analyzer and independently calculated mole fraction values. Measurement of species mole fractions during combustion process has also been demonstrated. It shows that the SRS can provide valuable data on this process in a CAI combustion engine

Sampling functions for multimode homodyne tomography with a single local oscillator

We derive various sampling functions for multimode homodyne tomography with a single local oscillator. These functions allow us to sample multimode s-parametrized quasidistributions, density matrix elements in Fock basis, and s-ordered moments of arbitrary order directly from the measured quadrature statistics. The inevitable experimental losses can be compensated by proper modification of the sampling functions. Results of Monte Carlo simulations for squeezed three-mode state are reported and the feasibility of reconstruction of the three-mode Q-function and s-ordered moments from 10^7 sampled data is demonstrated.Comment: 12 pages, 8 figures, REVTeX, submitted Phys. Rev.

A New Ultra-dense Group of Obscured Emission-Line Galaxies

We present the discovery of an isolated compact group of galaxies that is extremely dense (median projected galaxy separation: 6.9 kpc), has a very low velocity dispersion ($\sigma_{\rm 2D}$ = 67 km s$^{-1}$), and where all observed members show emission lines and are morphologically disturbed. These properties, together with the lack of spirals and the presence of a prominent tidal tail make this group one of the most evolved compact groups.Comment: 15 pages,LaTeX, 2figures. A Postscript figure with spectra is available at ftp://astro.uibk.ac.at/pub/weinberger/ . Accepted for publication in ApJ Letter

First Experimental Evidence for Chaos-Assisted Tunneling in a Microwave Annular Billiard

We report on first experimental signatures for chaos-assisted tunneling in a two-dimensional annular billiard. Measurements of microwave spectra from a superconducting cavity with high frequency resolution are combined with electromagnetic field distributions experimentally determined from a normal conducting twin cavity with high spatial resolution to resolve eigenmodes with properly identified quantum numbers. Distributions of so-called quasi-doublet splittings serve as basic observables for the tunneling between whispering gallery type modes localized to congruent, but distinct tori which are coupled weakly to irregular eigenstates associated with the chaotic region in phase space.Comment: 5 pages RevTex, 5 low-resolution figures (high-resolution figures: http://linac.ikp.physik.tu-darmstadt.de/heiko/chaospub.html, to be published in Phys. Rev. Let

Finite-temperature order-disorder phase transition in a frustrated bilayer quantum Heisenberg antiferromagnet in strong magnetic fields

We investigate the thermodynamic properties of the frustrated bilayer quantum Heisenberg antiferromagnet at low temperatures in the vicinity of the saturation magnetic field. The low-energy degrees of freedom of the spin model are mapped onto a hard-square gas on a square lattice. We use exact diagonalization data for finite spin systems to check the validity of such a description. Using a classical Monte Carlo method we give a quantitative description of the thermodynamics of the spin model at low temperatures around the saturation field. The main peculiarity of the considered two-dimensional Heisenberg antiferromagnet is related to a phase transition of the hard-square model on the square lattice, which belongs to the two-dimensional Ising model universality class. It manifests itself in a logarithmic (low-)temperature singularity of the specific heat of the spin system observed for magnetic fields just below the saturation field