Contribution à l'optimisation d'une technologie de composants hyperfréquences réalisés en carbure de silicium (SIC)

GRENOBLE1-BU Sciences (384212103) / SudocGRENOBLE INP-Phelma (381852301) / SudocSudocFranceF

Undoped SiGe material calibration for numerical nanosecond laser annealing simulations

International audiencePhysical parameters calibration (dielectric and alloy properties) of Si1-XGeX alloys is presented in order to simulate the Ultra Violet-Nanosecond Laser Annealing (UV-NLA) of this material for Si/ Si1-XGeX based MOS devices. Optical and physical parameters are extracted and modeled from experimental characterizations for several Ge concentrations and then fitted to match experimental laser annealing results. A good prediction, in terms of melt depth and melting duration, is achieved for different Ge concentrations between 20 and 40%, usually encountered in Si1-XGeX CMOS integration process

Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics

6 pages, 4 figuresInternational audienceWe present the experimental realization of ordered arrays of hyper-doped silicon nanodisks, which exhibit a localized surface plasmon resonance. The plasmon is widely tunable in a spectral window between 2 and 5 $\mu$m by adjusting the free carrier concentration between 10$^{20}$ and 10$^{21}$ cm$^{-3}$. We show that strong infrared light absorption can be achieved with all-silicon plasmonic metasurfaces employing nano-structures with dimensions as low as 100\,nm in diameter and 23 nm in height. Our numerical simulations show an excellent agreement with the experimental data and provide physical insights on the impact of the nanostructure shape as well as of near-field effects on the optical properties of the metasurface. Our results open highly promising perspectives for integrated all-silicon-based plasmonic devices for instance for chemical or biological sensing or for thermal imaging

A cost effective RF-SOI Drain Extended MOS transistor featuring PSAT=19dBm @28GHz & VDD=3V for 5G Power Amplifier application

International audienceA high voltage N-type Drain Extended MOS(NDEMOS) in 40nm RFSOI technology is presented for PA application. After a careful optimization of the drain extension,the NDEMOS transistor exhibits a fT.BV>700 GHz.V & fMAX=205GHz at Lg=70nm & VDD=2V, that meet the PArequirements at mmW frequency. The large-signal RF performance of a common-source NDEMOS PA cell areassessed. It exhibits 19.2dBm of PSAT @VDD=3V, that may be further improved in a cascode configuration. With thisNDEMOS device, this 300mm SOIMMW technology becomes a very cost effective platform for Front End modules(FEM) that can be competitive with other CMOS technologies