Drain and Transfer Characteristics of Al (6 mol %) Doped PbTiO3 Thin Film Transistor

Al doped PbTiO3 powder was firstly prepared by high temperature solid state reaction route. Structural and microstructural analysis were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM)). Fabrication process of a single-transistor type ferroelectric field effect transistor (1TFeFET) memory with PbTi(1-x)Al(x)O3 (PTA) films had been carried out. Electrical characteristics (drain & transfer) of all films were measured. According to the experimental results the laboratory-prepared transistors were utilized for 1T of NVFRAM

Characterization and Dielectric Properties of LaMnO3 Thin Films by Spin Coating Method

This paper presents LaMnO3 nanostructured thin films were deposited on silicon substrate by using Single Wafer Spin Processor. LaMnO3 powder was firstly prepared by pyrolysis method. The structural, morphology and thermal properties of LMO powder was examined by XRD, SEM and TG-DTA. The films obtained from spin coating technique have been annealed at 500 ºC and 600 ºC for 1 h. Morphology, and structural properties of fabricated LaMnO3 thin films were investigated by SEM and XRD analysis. The objective of this research is to explore the structure, dielectric properties and processing of thin films that contain nanoscale embedded hard particles

Electrical Properties of PbTiO3 Thin Film Diode

Lead titanate (PbTiO3) powder was prepared by starting chemicals of lead nitrate (Pb (NO3)2), potassium hydroxide (KOH) and different amount of titanium dioxide (TiO2) by classical hydrothermal sysnthesis at low temperature. X-ray Diffraction (XRD) technique was used to examine the phase identification and crystallographic properties of PbTiO3 powder. Hydrothermal PbTiO3 thin film was fabricated on the SiO2/Si substrate by using Single Wafer Spin Processor (MODEL WS-400BZ-6NPP/LITE). Scanning Electron Microscopy (SEM) was employed to study the grain morphology and film thickness. Electrical properties of PbTiO3/SiO2/Si cell were measured by means of I-V characteristics