3 research outputs found
Drain and Transfer Characteristics of Al (6 mol %) Doped PbTiO3 Thin Film Transistor
Al doped PbTiO3 powder was firstly prepared by
high temperature solid state reaction route. Structural and
microstructural analysis were studied by X-ray diffraction (XRD)
and scanning electron microscopy (SEM)). Fabrication process of
a single-transistor type ferroelectric field effect transistor
(1TFeFET) memory with PbTi(1-x)Al(x)O3 (PTA) films had been
carried out. Electrical characteristics (drain & transfer) of all
films were measured. According to the experimental results the
laboratory-prepared transistors were utilized for 1T of
NVFRAM
Characterization and Dielectric Properties of LaMnO3 Thin Films by Spin Coating Method
This paper presents LaMnO3 nanostructured thin
films were deposited on silicon substrate by using Single
Wafer Spin Processor. LaMnO3 powder was firstly prepared
by pyrolysis method. The structural, morphology and thermal
properties of LMO powder was examined by XRD, SEM and
TG-DTA. The films obtained from spin coating technique
have been annealed at 500 ºC and 600 ºC for 1 h. Morphology,
and structural properties of fabricated LaMnO3 thin films
were investigated by SEM and XRD analysis. The objective
of this research is to explore the structure, dielectric properties
and processing of thin films that contain nanoscale embedded
hard particles
Electrical Properties of PbTiO3 Thin Film Diode
Lead titanate (PbTiO3) powder was prepared by
starting chemicals of lead nitrate (Pb (NO3)2), potassium
hydroxide (KOH) and different amount of titanium dioxide
(TiO2) by classical hydrothermal sysnthesis at low temperature.
X-ray Diffraction (XRD) technique was used to examine the
phase identification and crystallographic properties of PbTiO3
powder. Hydrothermal PbTiO3 thin film was fabricated on the
SiO2/Si substrate by using Single Wafer Spin Processor
(MODEL WS-400BZ-6NPP/LITE). Scanning Electron
Microscopy (SEM) was employed to study the grain morphology
and film thickness. Electrical properties of PbTiO3/SiO2/Si cell
were measured by means of I-V characteristics