Surface study of the (100) and (010) faces of the quasicrystalapproximant Al4(Cr, Fe)

Low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM) results are used to study the pseudo-6-fold nature of the (100) surface of the orthorhombic quasicrystal approximant Al4(Cr, Fe). LEED patterns are also presented from the pseudo-10-fold (010) surface of this material. In each case the results are compared with the known bulk structure of this complex metallic alloy

Growth of Tl doped PbTe single crystals by the travelling heater method

Single crystals of Tl doped PbTe were grown using the travelling heater method (THM) and the electrical properties were evaluated at 77 K and found to be p-type

Single Crystal Growth of FeGa3 and FeGa3−xGex from High‐Temperature Solution Using the Czochralski Method

Single crystal growth and characterization of the binary semiconducting compound FeGa3 and its Ge‐substitute FeGa3–xGex are reported. Whereas there have been several investigations on the thermoelectric properties based on small samples grown by the flux method, this study is the first approach using the Czochralski growth technique from well‐oriented single‐crystalline seeds. Problems and solutions of the growth of cm3‐size single crystals are discussed in detail. Ge segregation in FeGa3–xGex is described by a segregation coefficient lower than unity which leads to an axially increasing Ge content along the pulling direction. Consequences with respect to lattice parameter changes and thermoanalytic measurements are reported

Spin dynamics of FeGa3−x_{3-x}Gex_x studied by Electron Spin Resonance

The intermetallic semiconductor FeGa$_{3}$ acquires itinerant ferromagnetism upon electron doping by a partial replacement of Ga with Ge. We studied the electron spin resonance (ESR) of high-quality single crystals of FeGa$_{3-x}$Ge$_x$ for $x$ from 0 up to 0.162 where ferromagnetic order is observed. For $x = 0$ we observed a well-defined ESR signal, indicating the presence of pre-formed magnetic moments in the semiconducting phase. Upon Ge doping the occurrence of itinerant magnetism clearly affects the ESR properties below $\approx 40$~K whereas at higher temperatures an ESR signal as seen in FeGa$_{3}$ prevails independent on the Ge-content. The present results show that the ESR of FeGa$_{3-x}$Ge$_x$ is an appropriate and direct tool to investigate the evolution of 3d-based itinerant magnetism.Comment: 12 pages, 7 figure

HotSwap for bioinformatics: A STRAP tutorial

BACKGROUND: Bioinformatics applications are now routinely used to analyze large amounts of data. Application development often requires many cycles of optimization, compiling, and testing. Repeatedly loading large datasets can significantly slow down the development process. We have incorporated HotSwap functionality into the protein workbench STRAP, allowing developers to create plugins using the Java HotSwap technique. RESULTS: Users can load multiple protein sequences or structures into the main STRAP user interface, and simultaneously develop plugins using an editor of their choice such as Emacs. Saving changes to the Java file causes STRAP to recompile the plugin and automatically update its user interface without requiring recompilation of STRAP or reloading of protein data. This article presents a tutorial on how to develop HotSwap plugins. STRAP is available at and . CONCLUSION: HotSwap is a useful and time-saving technique for bioinformatics developers. HotSwap can be used to efficiently develop bioinformatics applications that require loading large amounts of data into memory

Structural perfection of Hg1−xCdxTe Grown by THM

The defect structure of single crystals of Hg1-xCdxTe grown by the travelling heater method (THM) has been investigated using X-ray double crystal topography and a chemical etching technique. The structural perfection is found to depend on the ratio of growth and solidus temperature Tg/Ts

Study of Hg vacancies in (Hg,Cd)Te after THM growth and post-growth annealing by positron annihilation

Positron lifetime measurements have been performed to study vacancy defects in Hg0.78Cd0.22Te. Post-growth annealing under various Hg vapour pressure conditions have been used to create a well-defined number of Hg vacancies. The sensitivity range of the positron annihilation method was found to be 1015 < cHgvac<1018 cm-3. The obtained experience has been used to investigate THM-grown single crystals. The measured longitudinal and radial dependence of the vacancy concentration can be explained by the temperature profile in the grown (Hg,Cd)Te ingots

Al-4(Cr, Fe): single crystal growth by the Czochralski method and structural investigation with neutrons at FRM II

A single crystal of Al-4(Cr,Fe) with composition Al78Cr19Fe3 grown bythe Czochralski method was studied by neutron diffraction for the firsttime. As a preliminary result the neutron diffraction experimen

Czochralski growth of decagonal AlCoNi quasicrystals from Al-rich solution

Czochralski growth of cm size decagonal AlCoNi single crystals from Al-rich high-temperature solutions is described using native seeds oriented parallel to all symmetrically different crystal directions. Morphological observations allow first hints with respect to anisotropic growth rates. But only classical detachment experiments according to the original idea of Jan Czochralski reveal quantitative results of kinetically limited growth rates. Geometric conditions of wetted plane interfaces as well as aspects of constitutional supercooling affect the detachment experiments. Thus, in only one specific orientation of the decagonal quasicrystal quantitative data for the maximum growth rate could be obtained

Eg versus x relation from photoluminescence and electron microprobe investigations in p-type Hg1−xCdxTe (0.35 =< x =< 0.7)

Combined photoluminescence (at 10 T 300 K) and electron microprobe investigations have been carried out with HgCdTe samples grown from the melt or from solution. By exciting the samples through metallic masks with 200 μm diameter holes fixed with respect to the sample care was taken to pick-up both characteristic X-ray radiation as well as the photoluminescence from the same sample area. The Eg versus x relation determined in this way at T = 30 K has been compared with data from the interband absorption edge by other authors