Nature of the Ev + 0.23 eV and Ev + 0.38 eV gamma-induced centres in Ge.

All p-type Ge grown by the Czochralski technique from silica crucibles under an H sub 2 atmosphere shows two dominant acceptor defects on gamma irradiation. Measurements by DLTS are reported which support the hypothesis that these centres (E(v) + 0.23 eV E(v) + 0.38 eV) are most likely due to complexes between oxygen and lattice vacancies

Transient conductance spectroscopy measurements of defect states in y-irradiated n-channel silicon field effect transistors with possible y-dosemeter applications.

A deep level transient capacitance spectroscopy (DLTS) system modified for the measurement of transient conductance has been used to observe gamma-ray induced defect centres in the gate junction of 2N4416 Si field effect transistors. The defect concentrations increased linearly wth gamma-dose in the range 50 kGy to 10 x 10 3 kGy (5-1000 Mrad) for the common E(c) - 0.17 eV level and in the range 500 kGy to 10 x 10 3 kGy (50- 1000 Mrad) for the levels E(c) - 0.22 eV and E(c) - 0.44 eV. Another common level a hole trap at E(v) + 0.42 eV was the only minority trap observed. The technique may be useful for measuring gamma-fluxes in situations inaccessible to standard dosemeters (e.g. flux-mapping)

Transient capacitance measurements of deep level defects introduced in y-ray compensated germanium by long-term annealing at room temperature.

Deep level transient spectroscopy (DLTS) has been applied to defect centres in γ-ray compensated germanium that has been subjected to long-term annealing at room temperature. Deep donor levels (Ec - 0.36 eV Ec - 0.20 eV) have been observed for the first time; annealing at 675ºC for 3 hours increased their concentration in proportion to the free carrier density indicating stable defect-impurity complexes. Recently irradiated samples from the original material have not shown these levels. The results support Russian work on the compensation mechanism - the formation of electically inactive vacancy-donor complexes

Tailoring ferromagnetic chalcopyrites

If magnetic semiconductors are ever to find wide application in real spintronic devices, their magnetic and electronic properties will require tailoring in much the same way that band gaps are engineered in conventional semiconductors. Unfortunately, no systematic understanding yet exists of how, or even whether, properties such as Curie temperatures and band gaps are related in magnetic semiconductors. Here we explore theoretically these and other relationships within 64 members of a single materials class, the Mn-doped II-IV-V2 chalcopyrites, three of which are already known experimentally to be ferromagnetic semiconductors. Our first-principles results reveal a variation of magnetic properties across different materials that cannot be explained by either of the two dominant models of ferromagnetism in semiconductors. Based on our results for structural, electronic, and magnetic properties, we identify a small number of new stable chalcopyrites with excellent prospects for ferromagnetism.Comment: 6 pages with 4 figures, plus 3 supplementary figures; to appear in Nature Material

Ferromagnetic Semiconductors: Moving Beyond (Ga,Mn)As

The recent development of MBE techniques for growth of III-V ferromagnetic semiconductors has created materials with exceptional promise in spintronics, i.e. electronics that exploit carrier spin polarization. Among the most carefully studied of these materials is (Ga,Mn)As, in which meticulous optimization of growth techniques has led to reproducible materials properties and ferromagnetic transition temperatures well above 150 K. We review progress in the understanding of this particular material and efforts to address ferromagnetic semiconductors as a class. We then discuss proposals for how these materials might find applications in spintronics. Finally, we propose criteria that can be used to judge the potential utility of newly discovered ferromagnetic semiconductors, and we suggest guidelines that may be helpful in shaping the search for the ideal material.Comment: 37 pages, 4 figure

Observation of epitaxially ordered twinned zinc aluminate “nanoblades” on c-capphire

We report the observation of a novel nanostructured growth mode of the ceramic spinel zinc aluminate grown on c-sapphire in the form of epitaxially ordered twinned crystallites with pronounced vertically aligned “nanoblades” on top of these crystallites. The nanostructures are formed on bare c-sapphire substrates using a vapour phase transport method. Electron microscopy images reveal the nanostructure morphology and dimensions and allow direct and indirect observation of the twin boundary location in a number of samples. The nanoblade structure with sharply rising sidewalls gives rise to a distinctive bright contrast in secondary electron images in scanning electron microscopy measurements

Fabrication of Porous TiO2 Hollow Spheres and Their Application in Gas Sensing

In this work, porous TiO2 hollow spheres with an average diameter of 100 nm and shell thickness of 20 nm were synthesized by a facile hydrothermal method with NH4HCO3 as the structure-directing agent, and the formation mechanism for this porous hollow structure was proved to be the Ostwald ripening process by tracking the morphology of the products at different reaction stages. The product was characterized by SEM, TEM, XRD and BET analyses, and the results show that the as-synthesized products are anatase phase with a high surface area up to 132.5 m2/g. Gas-sensing investigation reveals that the product possesses sensitive response to methanal gas at 200°C due to its high surface area

Persistent Photoconductivity Studies in Nanostructured ZnO UV Sensors

The phenomenon of persistent photoconductivity is elusive and has not been addressed to an extent to attract attention both in micro and nanoscale devices due to unavailability of clear material systems and device configurations capable of providing comprehensive information. In this work, we have employed a nanostructured (nanowire diameter 30–65 nm and 5 μm in length) ZnO-based metal–semiconductor–metal photoconductor device in order to study the origin of persistent photoconductivity. The current–voltage measurements were carried with and without UV illumination under different oxygen levels. The photoresponse measurements indicated a persistent conductivity trend for depleted oxygen conditions. The persistent conductivity phenomenon is explained on the theoretical model that proposes the change of a neutral anion vacancy to a charged state

Metal-functionalized single-walled graphitic carbon nitride nanotubes: a first-principles study on magnetic property

The magnetic properties of metal-functionalized graphitic carbon nitride nanotubes were investigated based on first-principles calculations. The graphitic carbon nitride nanotube can be either ferromagnetic or antiferromagnetic by functionalizing with different metal atoms. The W- and Ti-functionalized nanotubes are ferromagnetic, which are attributed to carrier-mediated interactions because of the coupling between the spin-polarized d and p electrons and the formation of the impurity bands close to the band edges. However, Cr-, Mn-, Co-, and Ni-functionalized nanotubes are antiferromagnetic because of the anti-alignment of the magnetic moments between neighboring metal atoms. The functionalized nanotubes may be used in spintronics and hydrogen storage