In Situ EELS and TEM Observation of Al Implanted with Nitrogen Ions

Formation processes of Aluminum nitride (AlN) in Aluminum (Al) implanted with nitrogen were examined by in situ EELS and TEM observations during nitrogen ion implantation in an electron microscope at room temperature and $400\ ^\circ$C. AlN phase was identified both by EDP and EELS after nitrogen ion implantation to$6 \times 10^{20}$$\rm (N^+)/m^2$. The observed peak (20.8 eV) in EELS spectra was identified as the plasmon loss peak of AlN formed in Al. The binding energy of$\rm N_{1s}$in Al was found to shift by about 4 eV to the lower side with increasing nitrogen-ion fluence. Unreacted Al was also found to remain in the AlN films after high fluence implantation both at room temperature and$400\ ^\circ$C

Comparison between Plasmas Produced with Aluminium and Copper Lisitano Coils

An attempt to produce a pure ECR plasma is performed with an aluminium Lisitano coil. Plasma parameters obtained agree well with those of the plasma produced with a copper Lisitano coil. Sputtered-impurity atoms which are ejected from the surface of the aluminium Lisitano coil are found to be very few, compared with the copper Lisitano coil

材質の異ったリジターノコイルによるプラズマの生成

An attempt to produce a pure ECR plasma is performed with an aluminium Lisitano coil. Plasma parameters obtained agree well with those of the plasma produced with a copper Lisitano coil. Sputtered-impurity atoms which are ejected from the surface of the aluminium Lisitano coil are found to be very few, compared with the copper Lisitano coil