Preliminary study of minimum performance approaches to automated Mars sample return missions Final report, 19 Oct. - 20 Nov. 1970

Alternative mission/system approaches to automated Mars surface sample return based on utilization of Titan 3 or Saturn Intermediate-20 launch vehicle

Electronic states of metallic and semiconducting carbon nanotubes with bond and site disorder

Disorder effects on the density of states in carbon nanotubes are analyzed by a tight binding model with Gaussian bond or site disorder. Metallic armchair and semiconducting zigzag nanotubes are investigated. In the strong disorder limit, the conduction and valence band states merge, and a finite density of states appears at the Fermi energy in both of metallic and semiconducting carbon nanotubes. The bond disorder gives rise to a huge density of states at the Fermi energy differently from that of the site disorder case. Consequences for experiments are discussed.Comment: Phys. Rev. B: Brief Reports (to be published). Related preprints can be found at http://www.etl.go.jp/~harigaya/NEW.htm

The MAVEN Magnetic Field Investigation

The MAVEN magnetic field investigation is part of a comprehensive particles and fields subsystem that will measure the magnetic and electric fields and plasma environment of Mars and its interaction with the solar wind. The magnetic field instrumentation consists of two independent tri-axial fluxgate magnetometer sensors, remotely mounted at the outer extremity of the two solar arrays on small extensions ("boomlets"). The sensors are controlled by independent and functionally identical electronics assemblies that are integrated within the particles and fields subsystem and draw their power from redundant power supplies within that system. Each magnetometer measures the ambient vector magnetic field over a wide dynamic range (to 65,536 nT per axis) with a quantization uncertainty of 0.008 nT in the most sensitive dynamic range and an accuracy of better than 0.05%. Both magnetometers sample the ambient magnetic field at an intrinsic sample rate of 32 vector samples per second. Telemetry is transferred from each magnetometer to the particles and fields package once per second and subsequently passed to the spacecraft after some reformatting. The magnetic field data volume may be reduced by averaging and decimation, when necessary to meet telemetry allocations, and application of data compression, utilizing a lossless 8-bit differencing scheme. The MAVEN magnetic field experiment may be reconfigured in flight to meet unanticipated needs and is fully hardware redundant. A spacecraft magnetic control program was implemented to provide a magnetically clean environment for the magnetic sensors and the MAVEN mission plan provides for occasional spacecraft maneuvers - multiple rotations about the spacecraft x and z axes - to characterize spacecraft fields and/or instrument offsets in flight

Subband population in a single-wall carbon nanotube diode

We observe current rectification in a molecular diode consisting of a semiconducting single-wall carbon nanotube and an impurity. One half of the nanotube has no impurity, and it has a current-voltage (I-V) charcteristic of a typical semiconducting nanotube. The other half of the nanotube has the impurity on it, and its I-V characteristic is that of a diode. Current in the nanotube diode is carried by holes transported through the molecule's one-dimensional subbands. At 77 Kelvin we observe a step-wise increase in the current through the diode as a function of gate voltage, showing that we can control the number of occupied one-dimensional subbands through electrostatic doping.Comment: to appear in Physical Review Letters. 4 pages & 3 figure

Van Hove Singularities in disordered multichannel quantum wires and nanotubes

We present a theory for the van Hove singularity (VHS) in the tunneling density of states (TDOS) of disordered multichannel quantum wires, in particular multi-wall carbon nanotubes. We assume close-by gates which screen off electron-electron interactions. Diagrammatic perturbation theory within a non-crossing approximation yields analytical expressions governing the disorder-induced broadening and shift of VHS's as new subbands are opened. This problem is nontrivial because the (lowest-order) Born approximation breaks down close to the VHS. Interestingly, compared to the bulk case, the boundary TDOS shows drastically altered VHS, even in the clean limit.Comment: 4 pages, 2 figures, accepted with revisions in PR

Bandgap Change of Carbon Nanotubes: Effect of Small Tensile and Torsional Strain

We use a simple picture based on the $\pi$ electron approximation to study the bandgap variation of carbon nanotubes with uniaxial and torsional strain. We find (i) that the magnitude of slope of bandgap versus strain has an almost universal behaviour that depends on the chiral angle, (ii) that the sign of slope depends on the value of $(n-m) \bmod 3$ and (iii) a novel change in sign of the slope of bandgap versus uniaxial strain arising from a change in the value of the quantum number corresponding to the minimum bandgap. Four orbital calculations are also presented to show that the $\pi$ orbital results are valid.Comment: Revised. Method explained in detai

Conductance of carbon nanotubes with disorder: A numerical study

We study the conductance of carbon nanotube wires in the presence of disorder, in the limit of phase coherent transport. For this purpose, we have developed a simple numerical procedure to compute transmission through carbon nanotubes and related structures. Two models of disorder are considered, weak uniform disorder and isolated strong scatterers. In the case of weak uniform disorder, our simulations show that the conductance is not significantly affected by disorder when the Fermi energy is close to the band center. Further, the transmission around the band center depends on the diameter of these zero bandgap wires. We also find that the calculated small bias conductance as a function of the Fermi energy exhibits a dip when the Fermi energy is close to the second subband minima. In the presence of strong isolated disorder, our calculations show a transmission gap at the band center, and the corresponding conductance is very small

Multiple Functionality in Nanotube Transistors

Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm dimensions. At larger gate voltages, channel inversion leads to resonant tunneling through an electrostatically defined nanoscale quantum dot. Thus the transistor becomes a gated resonant tunelling device, with negative differential resistance at a tunable threshold. For the dimensions considered here, the device operates in the Coulomb blockade regime, even at room temperature.Comment: To appear in Phys. Rev. Let