Elliot-Yafet mechanism in graphene

The differences between spin relaxation in graphene and in other materials are discussed. For relaxation by scattering processes, the Elliot-Yafet mechanism, the relation between the spin and the momentum scattering times acquires a dependence on the carrier density, which is independent of the scattering mechanism and the relation between mobility and carrier concentration. This dependence puts severe restrictions on the origin of the spin relaxation in graphene. The density dependence of the spin relaxation allows us to distinguish between ordinary impurities and defects which modify locally the spin-orbit interaction.Comment: 4 pages + \epsilon + S

Electron spin relaxation in graphene with random Rashba field: Comparison of D'yakonov-Perel' and Elliott-Yafet--like mechanisms

Aiming to understand the main spin relaxation mechanism in graphene, we investigate the spin relaxation with random Rashba field induced by both adatoms and substrate, by means of the kinetic spin Bloch equation approach. The charged adatoms on one hand enhance the Rashba spin-orbit coupling locally and on the other hand serve as Coulomb potential scatterers. Both effects contribute to spin relaxation limited by the D'yakonov-Perel' mechanism. In addition, the random Rashba field also causes spin relaxation by spin-flip scattering, manifesting itself as an Elliott-Yafet--like mechanism. Both mechanisms are sensitive to the correlation length of the random Rashba field, which may be affected by the environmental parameters such as electron density and temperature. By fitting and comparing the experiments from the Groningen group [J\'ozsa {\it et al.}, Phys. Rev. B {\bf 80}, 241403(R) (2009)] and Riverside group [Pi {\it et al.}, Phys. Rev. Lett. {\bf 104}, 187201 (2010); Han and Kawakami, {\it ibid.} {\bf 107}, 047207 (2011)] which show either D'yakonov-Perel'-- (with the spin relaxation rate being inversely proportional to the momentum scattering rate) or Elliott-Yafet--like (with the spin relaxation rate being proportional to the momentum scattering rate) properties, we suggest that the D'yakonov-Perel' mechanism dominates the spin relaxation in graphene. The latest experimental finding of a nonmonotonic dependence of spin relaxation time on diffusion coefficient by Jo {\it et al.} [Phys. Rev. B {\bf 84}, 075453 (2011)] is also well reproduced by our model.Comment: 13 pages, 9 figures, to be published in New J. Phy

Influence of MWCNT/surfactant dispersions on the mechanical properties of Portland cement pastes

This work studies the reinforcing effect of Multi Walled Carbon Nanotubes (MWCNT) on cement pastes. A 0.35% solid concentration of MWCNT in powder was dispersed in deionized water with sodium dodecyl sulfate (cationic surfactant), cetylpyridinium chloride (anionic surfactant) and triton X-100 (amphoteric surfactant) using an ultrasonic tip processor. Three concentrations of each surfactant (1mM, 10mM and 100mM) were tested, and all samples were sonicated until an adequate dispersion degree was obtained. Cement pastes with additions of carbon nanotubes of 0.15% by mass of cement were produced in two steps; first the dispersions of MWCNT were combined with the mixing water using an ultrasonic tip processor to guarantee homogeneity, and then cement was added and mixed until a homogeneous paste was obtained. Direct tensile strength, apparent density and open porosity of the pastes were measured after 7 days of curing. It was found that the MWCNT/surfactants dispersions decrease the mechanical properties of the cement based matrix due to an increased porosity caused by the presence of surfactants. © Published under licence by IOP Publishing Ltd

Student Interviews via Email

This document contains the answers to the same four questions that were asked of two students who wished to remain anonymous. Both stated that the pandemic made it much more difficult for them to learn and participate in school activities. They offer their perspectives on how the pandemic has affected their motivation to continue schooling as well as their plans for the future, including whether or not to continue with their college education. They also offer perspectives on how they think their race has played a factor in continuing their schooling

Atomically thin current pathways in graphene through Kekul\'e-O engineering

We demonstrate that the current flow in graphene can be guided on atomically thin current pathways by means of the engineering of Kekul\'e-O distortions. A grain boundary in these distortions separates the system into topological distinct regions and induces a ballistic domain-wall state. The state does not depend on the precise orientation of the grain boundary with respect to the graphene sublattice and therefore, permits to guide the current on arbitrary paths through the system. As the state is gapped, the current flow can be switched by electrostatic gates. Our findings can be explained by a generalization of the Jackiw-Rebbi model, where the electrons behave in one region of the system as fermions with an effective complex mass, making the device not only promising for technological applications but also a test-ground for concepts from high-energy physics. An atomic model supported by DFT calculations demonstrates that the proposed system can be realized by decorating graphene with Ti atoms.Comment: 8 pages, 5 figure