3,787 research outputs found
Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC
Silicon pixel modules employing n-in-p planar sensors with an active
thickness of 200 m, produced at CiS, and 100-200 m thin active/slim
edge sensor devices, produced at VTT in Finland have been interconnected to
ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high
energy physics collider experiments to ensure radiation hardness at high
fluences. Moreover, the active edge technology of the VTT production maximizes
the sensitive region of the assembly, allowing for a reduced overlap of the
modules in the pixel layer close to the beam pipe. The CiS production includes
also four chip sensors according to the module geometry planned for the outer
layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The
modules have been characterized using radioactive sources in the laboratory and
with high precision measurements at beam tests to investigate the hit
efficiency and charge collection properties at different bias voltages and
particle incidence angles. The performance of the different sensor thicknesses
and edge designs are compared before and after irradiation up to a fluence of
.Comment: In proceedings of the 10th International Conference on Position
Sensitive Detectors, PSD10 201
Investigation of thin n-in-p planar pixel modules for the ATLAS upgrade
In view of the High Luminosity upgrade of the Large Hadron Collider (HL-LHC),
planned to start around 2023-2025, the ATLAS experiment will undergo a
replacement of the Inner Detector. A higher luminosity will imply higher
irradiation levels and hence will demand more ra- diation hardness especially
in the inner layers of the pixel system. The n-in-p silicon technology is a
promising candidate to instrument this region, also thanks to its
cost-effectiveness because it only requires a single sided processing in
contrast to the n-in-n pixel technology presently employed in the LHC
experiments. In addition, thin sensors were found to ensure radiation hardness
at high fluences. An overview is given of recent results obtained with not
irradiated and irradiated n-in-p planar pixel modules. The focus will be on
n-in-p planar pixel sensors with an active thickness of 100 and 150 um recently
produced at ADVACAM. To maximize the active area of the sensors, slim and
active edges are implemented. The performance of these modules is investigated
at beam tests and the results on edge efficiency will be shown
Heavily Irradiated N-in-p Thin Planar Pixel Sensors with and without Active Edges
We present the results of the characterization of silicon pixel modules
employing n-in-p planar sensors with an active thickness of 150
m, produced at MPP/HLL, and 100-200 m thin active
edge sensor devices, produced at VTT in Finland. These thin sensors are
designed as candidates for the ATLAS pixel detector upgrade to be operated at
the HL-LHC, as they ensure radiation hardness at high fluences. They are
interconnected to the ATLAS FE-I3 and FE-I4 read-out chips. Moreover, the
n-in-p technology only requires a single side processing and thereby it is a
cost-effective alternative to the n-in-n pixel technology presently employed in
the LHC experiments. High precision beam test measurements of the hit
efficiency have been performed on these devices both at the CERN SpS and at
DESY, Hamburg. We studied the behavior of these sensors at different bias
voltages and different beam incident angles up to the maximum one expected for
the new Insertable B-Layer of ATLAS and for HL-LHC detectors. Results obtained
with 150 m thin sensors, assembled with the new ATLAS FE-I4 chip
and irradiated up to a fluence of
410, show that they are
excellent candidates for larger radii of the silicon pixel tracker in the
upgrade of the ATLAS detector at HL-LHC. In addition, the active edge
technology of the VTT devices maximizes the active area of the sensor and
reduces the material budget to suit the requirements for the innermost layers.
The edge pixel performance of VTT modules has been investigated at beam test
experiments and the analysis after irradiation up to a fluence of
510 has been performed
using radioactive sources in the laboratory.Comment: Proceedings for iWoRiD 2013 conference, submitted to JINS
Performance of novel silicon n-in-p planar Pixel Sensors
The performance of novel n-in-p planar pixel detectors, designed for future
upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors
technology is a promising candidate for the pixel upgrade thanks to its
radiation hardness and cost effectiveness, that allow for enlarging the area
instrumented with pixel detectors. The n-in-p modules presented here are
composed of pixel sensors produced by CiS connected by bump-bonding to the
ATLAS readout chip FE-I3. The characterization of these devices has been
performed before and after irradiation up to a fluence of 5 x 10**15 1 MeV neq
cm-2 . Charge collection measurements carried out with radioactive sources have
proven the functioning of this technology up to these particle fluences. First
results from beam test data with a 120 GeV/c pion beam at the CERN-SPS are also
discussed, demonstrating a high tracking efficiency of (98.6 \pm 0.3)% and a
high collected charge of about 10 ke for a device irradiated at the maximum
fluence and biased at 1 kV.Comment: Preprint submitted to Nuclear Instruments and Methods A. 7 pages, 13
figure
Thin n-in-p pixel sensors and the SLID-ICV vertical integration technology for the ATLAS upgrade at the HL-LHC
The R&D activity presented is focused on the development of new modules for
the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The
performance after irradiation of n-in-p pixel sensors of different active
thicknesses is studied, together with an investigation of a novel
interconnection technique offered by the Fraunhofer Institute EMFT in Munich,
the Solid-Liquid-InterDiffusion (SLID), which is an alternative to the standard
solder bump-bonding. The pixel modules are based on thin n-in-p sensors, with
an active thickness of 75 um or 150 um, produced at the MPI Semiconductor
Laboratory (MPI HLL) and on 100 um thick sensors with active edges, fabricated
at VTT, Finland. Hit efficiencies are derived from beam test data for thin
devices irradiated up to a fluence of 4e15 neq/cm^2. For the active edge
devices, the charge collection properties of the edge pixels before irradiation
is discussed in detail, with respect to the inner ones, using measurements with
radioactive sources. Beyond the active edge sensors, an additional ingredient
needed to design four side buttable modules is the possibility of moving the
wire bonding area from the chip surface facing the sensor to the backside,
avoiding the implementation of the cantilever extruding beyond the sensor area.
The feasibility of this process is under investigation with the FE-I3 SLID
modules, where Inter Chip Vias are etched, employing an EMFT technology, with a
cross section of 3 um x 10 um, at the positions of the original wire bonding
pads.Comment: Proceedings for Pixel 2012 Conference, submitted to NIM A, 6 page
Production and Characterisation of SLID Interconnected n-in-p Pixel Modules with 75 Micrometer Thin Silicon Sensors
The performance of pixel modules built from 75 micrometer thin silicon
sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion
(SLID) interconnection technology is presented. This technology, developed by
the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It
allows for stacking of different interconnected chip and sensor layers without
destroying the already formed bonds. In combination with Inter-Chip-Vias (ICVs)
this paves the way for vertical integration. Both technologies are combined in
a pixel module concept which is the basis for the modules discussed in this
paper.
Mechanical and electrical parameters of pixel modules employing both SLID
interconnections and sensors of 75 micrometer thickness are covered. The
mechanical features discussed include the interconnection efficiency, alignment
precision and mechanical strength. The electrical properties comprise the
leakage currents, tuning characteristics, charge collection, cluster sizes and
hit efficiencies. Targeting at a usage at the high luminosity upgrade of the
LHC accelerator called HL-LHC, the results were obtained before and after
irradiation up to fluences of
(1 MeV neutrons).Comment: 16 pages, 22 figure
Novel Silicon n-in-p Pixel Sensors for the future ATLAS Upgrades
In view of the LHC upgrade phases towards HL-LHC the ATLAS experiment plans
to upgrade the Inner Detector with an all silicon system. The n-in-p silicon
technology is a promising candidate for the pixel upgrade thanks to its
radiation hardness and cost effectiveness, that allow for enlarging the area
instrumented with pixel detectors. We present the characterization and
performance of novel n-in-p planar pixel sensors produced by CiS (Germany)
connected by bump bonding to the ATLAS readout chip FE-I3. These results are
obtained before and after irradiation up to a fluence of 10^16 1-MeV n_eq/cm^2,
and prove the operability of this kind of sensors in the harsh radiation
environment foreseen for the pixel system at HL-LHC. We also present an
overview of the new pixel production, which is on-going at CiS for sensors
compatible with the new ATLAS readout chip FE-I4.Comment: Preprint submitted to NIM-A Proceedings (Elba 2012
Characterization of Thin Pixel Sensor Modules Interconnected with SLID Technology Irradiated to a Fluence of 2\,n/cm
A new module concept for future ATLAS pixel detector upgrades is presented,
where thin n-in-p silicon sensors are connected to the front-end chip
exploiting the novel Solid Liquid Interdiffusion technique (SLID) and the
signals are read out via Inter Chip Vias (ICV) etched through the front-end.
This should serve as a proof of principle for future four-side buttable pixel
assemblies for the ATLAS upgrades, without the cantilever presently needed in
the chip for the wire bonding.
The SLID interconnection, developed by the Fraunhofer EMFT, is a possible
alternative to the standard bump-bonding. It is characterized by a very thin
eutectic Cu-Sn alloy and allows for stacking of different layers of chips on
top of the first one, without destroying the pre-existing bonds. This paves the
way for vertical integration technologies.
Results of the characterization of the first pixel modules interconnected
through SLID as well as of one sample irradiated to \,\neqcm{}
are discussed.
Additionally, the etching of ICV into the front-end wafers was started. ICVs
will be used to route the signals vertically through the front-end chip, to
newly created pads on the backside. In the EMFT approach the chip wafer is
thinned to (50--60)\,m.Comment: Proceedings to PSD
Characterisation of novel thin n-in-p planar pixel modules for the ATLAS Inner Tracker upgrade
In view of the high luminosity phase of the LHC (HL-LHC) to start operation
around 2026, a major upgrade of the tracker system for the ATLAS experiment is
in preparation. The expected neutron equivalent fluence of up to 2.4 * 1e16 1
MeV neq./cm2 at the innermost layer of the pixel detector poses the most severe
challenge. Thanks to their low material budget and high charge collection
efficiency after irradiation, modules made of thin planar pixel sensors are
promising candidates to instrument these layers. To optimise the sensor layout
for the decreased pixel cell size of 50 * 50 {\mu}m2, TCAD device simulations
are being performed to investigate the charge collection efficiency before and
after irradiation. In addition, sensors of 100-150 {\mu}m thickness,
interconnected to FE-I4 read-out chips featuring the previous generation pixel
cell size of 50 * 250 {\mu}m2, are characterised with testbeams at the CERN-SPS
and DESY facilities. The performance of sensors with various designs,
irradiated up to a fluence of 1 * 1e16 neq./cm2, is compared in terms of charge
collection and hit efficiency. A replacement of the two innermost pixel layers
is foreseen during the lifetime of HL-LHC. The replacement will require several
months of intervention, during which the remaining detector modules cannot be
cooled. They are kept at room temperature, thus inducing an annealing. The
performance of irradiated modules will be investigated with testbeam campaigns
and the method of accelerated annealing at higher temperatures.Comment: 11 pages, 10 figures, proceedings of the PSD Conference 201
Application of a new interconnection technology for the ATLAS pixel upgrade at SLHC
We present an R&D activity aiming towards a new detector concept in the framework of the ATLAS pixel detector upgrade exploiting a vertical integration technology developed at the Fraunhofer Institute IZMMunich. The Solid-Liquid InterDiffusion (SLID) technique is investigated as an alternative to the bump-bonding process. We also investigate the extraction of the signals from the back of the read-out chip through Inter-Chip-Vias to achieve a higher fraction of active area with respect to the present ATLAS pixel module. We will present the layout and the first results obtained with a production of test-structures designed to investigate the SLID interconnection efficiency as a function of different parameters, i.e. the pixel size and pitch, as well as the planarity of the underlying layers
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