Quantitative analysis of TM lateral leakage in foundry fabricated silicon Rib waveguides

We show that thin, shallow ridge, silicon-on-insulator waveguides exhibiting a lateral leakage behavior can be designed and fabricated using a standard silicon photonic foundry platform. We analyze the propagation loss through the observation of the transmitted TM polarized guided mode and TE polarized radiation and experimentally demonstrate that propagation losses as low as 0.087 dB/mm can be achieved. This demonstration will open a new frontier for practical devices exploiting a lateral leakage behavior with potential applications in the fields of biosensing and quantum optics among others

Long-range coupling of silicon photonic waveguides using lateral leakage and adiabatic passage

We present a new approach to long range coupling based on a combination of adiabatic passage and lateral leakage in thin shallow ridge waveguides on a silicon photonic platform. The approach enables transport of light between two isolated waveguides through a mode of the silicon slab that acts as an optical bus. Due to the nature of the adiabatic protocol, the bus mode has minimal population and the transport is highly robust. We prove the concept and examine the robustness of this approach using rigorous modelling. We further demonstrate the utility of the approach by coupling power between two waveguides whilst bypassing an intermediate waveguide. This concept could form the basis of a new interconnect technology for silicon integrated photonic chips

Experimental demonstration of TM lateral leakage in a standard SOI photonics platform

We provide an experimental demonstration of the width dependent losses of the fundamental TM guided mode in fabricated silicon-on-insulator shallow etched ridge waveguides