Metallic nano-crystals for flash memories

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Conformal isolation of high-aspect-ratio TSVs using a low-kappa dielectric deposited by filament-assisted CVD

International audienceIn this study, SiOCH thin films were deposited by filament assisted chemical vapor deposition using methyltriethoxysilane. It is shown that annealing the films at 400 degrees C (with or without UV-assist) is required to meet specifications in terms of dielectric properties (low-kappa values and good insulating properties). This work highlights FACVD as a promising technique to allow the deposition of conformal dielectric thin films within High-Aspect-Ratio TSVs. Step coverage higher than 70% were obtained within 10 * 80 mu m TSVs. Then, FACVD deposited SiOCH films can be considered as a promising candidate for use within TSV technologies

Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 "high k" and 2 metal deposition techniques

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Passivated TiN nanocrystals/SiN trapping layer for enhanced erasing in nonvolatile memory

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Impact of WSix Metal Gate Stoichiometry on Fully Depleted SOI MOSFETs Electrical Properties

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Comparative study of non-polar switching behaviors of NiO and HfO2-based oxide resistive-RAMs

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Active Interposer Technology for Chiplet-Based Advanced 3D System Architectures

International audienceWe report the first successful technology integration of chiplets on an active silicon interposer, fully processed, packaged and tested. Benefits of chiplet-based architectures are discussed. Built up technology is presented and focused on 3D interconnects process and characterization. 3D packaging is presented up to the successful structural test and characterization of the demonstrator