Epitaxial fe/cu superlattices on Si(111)

We report on the successful epitaxial growth of Fe/Cu superlattices on Si( 111) wafers at room temperature. The superlattices were characterized with x-ray diffraction, conversion electron Mossbauer spectrometry, and selected area electron diffraction experiments. The epitaxial growth is crucially dependent on which element is deposited first on the bare Si( 111)

The epitaxial growth of evaporated cu/caf2 bilayers on si(111)

Successful and unexpected epitaxial growth of Cu/CaF2, bilayers on hydrogen terminated Si(111) wafers by thermal evaporation is reported. The bilayers were characterized with conventional x-ray diffraction experiments, grazing angle incidence x-ray diffraction experiments, rocking curves, and x scans. The growth mode of Cu films on CaF2 epitaxially grown on Si(111) is completely different from that of the Cu film grown directly on Si(111)

La Voz de Asturias : diario de información: Año XI Número 3300 - 1933 Noviembre 14

In this work we present low-field magnetic measurements on multilayers of Fe 1.5 nm and Cu 1.5 nm layers, repeated 10 times, grown on Si~111! and Fe 5 nm/CaF2 40 nm/Si(111), substrates. Magnetic characteristics of a spin-glass phase are exhibited by samples directly grown on Si (111), for which the glass temperatures (TG) depend strongly on the magnetic field. Above TG those samples exhibit a ferromagnetic behavior. In contrast, samples grown on Fe/CaF2 buffer structure also show the spin-glass characteristics, but are antiferromagnetic above TG . This work deals with the fundamental role played by the interface between Fe and Cu for these effects, which is clearly emphasized by the experimental results

Structural change and heteroepitaxy induced by rapid thermal annealing of CaF/sub 2/ films on Si(111)

In this article we show that heteroepitaxial CaF2 films can be induced on Si~111! with a rapid thermal anneal. The change from preferentially oriented polycrystals to a single crystal with type- B epitaxy is visible by different structural techniques. The x-ray photoelectron spectroscopy results indicate the presence of a reacted layer at the CaF2 /Si interface with a pronounced increase of fluorine atoms at this interface. Transmission electron microscopy results show that big structural changes occur due to the thermal pulse

Structural change and heteroepitaxy induced by rapid thermal annealing of CaF/sub 2/ films on Si(111)

In this article we show that heteroepitaxial CaF2 films can be induced on Si~111! with a rapid thermal anneal. The change from preferentially oriented polycrystals to a single crystal with type- B epitaxy is visible by different structural techniques. The x-ray photoelectron spectroscopy results indicate the presence of a reacted layer at the CaF2 /Si interface with a pronounced increase of fluorine atoms at this interface. Transmission electron microscopy results show that big structural changes occur due to the thermal pulse