8 research outputs found

    High rejection self-oscillating up-conversion mixer for fifth-generation communications

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    This paper presents the design of a pseudomorphic high electron mobility transistor (pHEMT) self-oscillating mixer (SOM) for millimeter wave wireless communication systems. The 180° out-of-phase technique is chosen to both improve the desired lower sideband (LSB) signal and to achieve a satisfactory rejection of the unwanted signals (LO, USB and IF). This SOM is designed on the PH15 process of UMS foundry which is based on 0.15 µm GaAs pHEMT. The signal is up-converted from 2 GHz-IF frequency to 26 GHz-LSB frequency, using an autogenerated 28 GHz-LO signal. Simulations were performed using the advanced design system (ADS) workflow. They show 6.4 dB conversion gain and a signal rejection rate of 29.7 dB for the unwanted USB signal. the chip size is 3.6 mm2

    28 GHz balanced pHEMT VCO with low phase noise and high output power performance for 5G mm-Wave systems

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    This paper presents the study and design of a balanced voltage controlled oscillator VCO for 5G wireless communication systems. This circuit is designed in monolithic microwave integrated circuit (MMIC) technology using PH15 process from UMS foundry. The VCO ensures an adequate tuning range by a single-ended pHEMT varactors configuration. The simulation results show that this circuit delivers a sinusoidal signal of output power around 9 dBm with a second harmonic rejection between 25.87 and 33.83 dB, the oscillation frequency varies between 26.46 and 28.90 GHz, the phase noise is -113.155 and -133.167 dBc/Hz respectively at 1 MHz and 10 MHz offset and the Figure of Merit is -181.06 dBc/Hz. The power consumed by the VCO is 122 mW. The oscillator layout with bias and RF output pads occupies an area of 0.515 mm2

    A 5G mm-wave compact voltage-controlled oscillator in 0.25 µm pHEMT technology

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    A 5G mm-wave monolithic microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO) is presented in this paper. It is designed on GaAs substrate and with 0.25 µm-pHEMT technology from UMS foundry and it is based on pHEMT varactors in order to achieve a very small chip size. A 0dBm-output power over the entire tuning range from 27.67 GHz to 28.91 GHz, a phase noise of -96.274 dBc/Hz and -116.24 dBc/Hz at 1 and 10 MHz offset frequency from the carrier respectively are obtained on simulation. A power consumption of 111 mW is obtained for a chip size of 0.268 mm2. According to our knowledge, this circuit occupies the smallest surface area compared to pHEMTs oscillators published in the literature

    Etude et Conception d’un Filtre Passe Haut à Deux Pôles pour les Applications à 60 GHz

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    Ce papier présente l’étude d’un filtre passe haut à deux pôles qui sera utilisé dans la conception d’un quadrupleur de fréquence en bande millimétrique à 60 GHz. La particularité de ce filtre est de faire passer les signaux appartenant à la bande millimétrique [56-64GHz] constituant la quatrième harmonique et de rejeter les autres signaux indésirables. La rejection obtenue est supérieure à 18 dB. Le filtre étudié est conçu en technologie MMIC (Monolithic Microwave Integrated Circuits) en utilisant le procédé PH15 de la fonderie UMS

    A V-band MMIC frequency quadrupler with active input matching

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    Structure of a frequency multiplier by 4 for WPAN networks applications

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    Design of a MMIC frequency quadrupler in millimeter-wave band

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