12,786 research outputs found

    The Effect of Injection-Valve Opening Pressure on Spray-Tip Penetration

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    The effect of various injection-valve opening pressures on the spray-tip penetration was determined for several injection pressure. A common-rail fuel injection system was used. For a given injection pressure a maximum rate of penetration was obtained with an injection-valve opening pressure equal to the injection pressure. As the excess of the injection pressure over the injection-valve opening pressure was increased for a given injection pressure, the effect of the injection-valve opening pressure on the spray-tip penetration was increased

    Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress

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    The electrical characteristics of various size tunnel switch diode devices, composed of Al/SiO2/n-Si/p+-Si layers, which operate with a range of parameters (such as current densities in excess of 104 A/cm2) that stress the oxide layer far beyond the levels used in typical thin oxide metal-oxide semiconductor research have been examined. It is found that the first time a large current and electric field are applied to the device, a "forming" process enhances transport through the oxide in the vicinity of the edges of the gate electrode, but the oxide still retains its integrity as a tunnel barrier. The device operation is relatively stable to stresses of greater than 107 C/cm2 areally averaged, time-integrated charge injection. Duplication and characterization of these modified oxide tunneling properties was attempted using scanning tunneling microscopy (STM) to stress and probe the oxide. Electrical stressing with the STM tip creates regions of reduced conductivity, possibly resulting from trapped charge in the oxide. Lateral variations in the conductivity of the unstressed oxide over regions roughly 20–50 nm across were also found

    Tracing the spiral arms in IP Pegasi

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    We report the analysis of time-resolved spectroscopy of IP Pegasi in outburst with eclipse mapping techniques to investigate the location and geometry of the observed spiral structures. We were able to obtain an improved view of the spiral structures with the aid of light curves extracted in velocity bins matching the observed range of velocities of the spiral arms combined with a double default map tailored for reconstruction of asymmetric structures. Two-armed spiral structures are clearly seen in all eclipse maps. The arms are located at different distances from the disc centre. The “blue” arm is farther out in the disc (R = 0.55 ± 0.05 R L1 ) than the “red” arm (R = 0.30 ± 0.05 R L1 ). There is evidence that the velocity of the emitting gas along the spiral pattern is lower than the Keplerian velocity for the same disc radius. The discrepancy is smaller in the outer arm (measured velocities 10–15 per cent lower than Keplerian) and is more significant in the inner arm (observed velocities up to 40 per cent lower than Keplerian). We measured the opening angle of the spirals from the azimuthal intensity distribution of the eclipse maps to be φ = 25◦ ± 3◦ . A comparison with similar measurements on data at different outburst stages reveals that the opening angle of the spiral arms in IP Peg decreases while the outbursting accretion disc cools and shrinks, in agreement with the expected evolution of a tidally driven spiral wave. The sub-Keplerian velocities along the spiral pattern and the clear correlation between the opening angle of the spirals and the outburst stage favors the interpretation of these asymmetric structures as tidally-induced spiral shocks

    Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy

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    Using electron beam evaporation, a Si/CeO2/Si(111) structure has been grown in a molecular beam epitaxy machine. In situ low energy electron diffraction, cross sectional transmission electron microscopy, selected area diffraction, and atomic force microscopy have been used to structurally characterize the overlying silicon layer and show it to be single crystalline and epitaxially oriented. Rutherford backscattering and energy dispersive x-ray analysis have been used to confirm the presence of a continuous 23 Å CeO2 layer at the interface. Rutherford backscattering and x-ray photoemission spectroscopy show an additional presence of cerium both at the exposed silicon surface and incorporated in low levels (~ 1%) within the silicon film, suggesting a growth mechanism with cerium riding atop the silicon growth front leaving behind small amounts of cerium incorporated in the growing silicon crystal

    Close Binary White Dwarf Systems: Numerous New Detections and Their Interpretation

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    We describe radial velocity observations of a large sample of apparently single white dwarfs (WDs), obtained in a long-term effort to discover close, double-degenerate (DD) pairs which might comprise viable Type Ia Supernova (SN Ia) progenitors. We augment the WD sample with a previously observed sample of apparently single subdwarf B (sdB) stars, which are believed to evolve directly to the WD cooling sequence after the cessation of core helium burning. We have identified 18 new radial velocity variables, including five confirmed sdB+WD short-period pairs. Our observations are in general agreement with the predictions of the theory of binary star evolution. We describe a numerical method to evaluate the detection efficiency of the survey and estimate the number of binary systems not detected due to the effects of varying orbital inclination, orbital phase at the epoch of the first observation, and the actual temporal sampling of each object in the sample. Follow-up observations are in progress to solve for the orbital parameters of the candidate velocity variables.Comment: 30 pages (LaTeX) + 6 figures (Postscript), aaspp4 styl

    Low Luminosity Companions to White Dwarfs

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    This paper presents results of a near-infrared imaging survey for low mass stellar and substellar companions to white dwarfs. A wide field proper motion survey of 261 white dwarfs was capable of directly detecting companions at orbital separations between 100\sim100 and 5000 AU with masses as low as 0.05 MM_{\odot}, while a deep near field search of 86 white dwarfs was capable of directly detecting companions at separations between 50\sim50 and 1100 AU with masses as low as 0.02 MM_{\odot}. Additionally, all white dwarf targets were examined for near-infrared excess emission, a technique capable of detecting companions at arbitrarily close separations down to masses of 0.05 MM_{\odot}. No brown dwarf candidates were detected, which implies a brown dwarf companion fraction of <0.5<0.5% for white dwarfs. In contrast, the stellar companion fraction of white dwarfs as measured by this survey is 22%, uncorrected for bias. Moreover, most of the known and suspected stellar companions to white dwarfs are low mass stars whose masses are only slightly greater than the masses of brown dwarfs. Twenty previously unknown stellar companions were detected, five of which are confirmed or likely white dwarfs themselves, while fifteen are confirmed or likely low mass stars. Similar to the distribution of cool field dwarfs as a function of spectral type, the number of cool unevolved dwarf companions peaks at mid-M type. Based on the present work, relative to this peak, field L dwarfs appear to be roughly 2-3 times more abundant than companion L dwarfs. Additionally, there is no evidence that the initial companion masses have been altered by post main sequence binary interactions.Comment: 149 pages, 59 figures, 11 tables, accepted to ApJ Supplement
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