113 research outputs found
Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
Resonant frequencies of the two-dimensional plasma in FETs increase with the
reduction of the channel dimensions and can reach the THz range for sub-micron
gate lengths. Nonlinear properties of the electron plasma in the transistor
channel can be used for the detection and mixing of THz frequencies. At
cryogenic temperatures resonant and gate voltage tunable detection related to
plasma waves resonances, is observed. At room temperature, when plasma
oscillations are overdamped, the FET can operate as an efficient broadband THz
detector. We present the main theoretical and experimental results on THz
detection by FETs in the context of their possible application for THz imaging.Comment: 22 pages, 12 figures, review pape
Direct electronic measurement of the spin Hall effect
The generation, manipulation and detection of spin-polarized electrons in
nanostructures define the main challenges of spin-based electronics[1]. Amongst
the different approaches for spin generation and manipulation, spin-orbit
coupling, which couples the spin of an electron to its momentum, is attracting
considerable interest. In a spin-orbit-coupled system, a nonzero spin-current
is predicted in a direction perpendicular to the applied electric field, giving
rise to a "spin Hall effect"[2-4]. Consistent with this effect,
electrically-induced spin polarization was recently detected by optical
techniques at the edges of a semiconductor channel[5] and in two-dimensional
electron gases in semiconductor heterostructures[6,7]. Here we report
electrical measurements of the spin-Hall effect in a diffusive metallic
conductor, using a ferromagnetic electrode in combination with a tunnel barrier
to inject a spin-polarized current. In our devices, we observe an induced
voltage that results exclusively from the conversion of the injected spin
current into charge imbalance through the spin Hall effect. Such a voltage is
proportional to the component of the injected spins that is perpendicular to
the plane defined by the spin current direction and the voltage probes. These
experiments reveal opportunities for efficient spin detection without the need
for magnetic materials, which could lead to useful spintronics devices that
integrate information processing and data storage.Comment: 5 pages, 4 figures. Accepted for publication in Nature (pending
format approval
Demagnetization of Quantum Dot Nuclear Spins: Breakdown of the Nuclear Spin Temperature Approach
The physics of interacting nuclear spins arranged in a crystalline lattice is
typically described using a thermodynamic framework: a variety of experimental
studies in bulk solid-state systems have proven the concept of a spin
temperature to be not only correct but also vital for the understanding of
experimental observations. Using demagnetization experiments we demonstrate
that the mesoscopic nuclear spin ensemble of a quantum dot (QD) can in general
not be described by a spin temperature. We associate the observed deviations
from a thermal spin state with the presence of strong quadrupolar interactions
within the QD that cause significant anharmonicity in the spectrum of the
nuclear spins. Strain-induced, inhomogeneous quadrupolar shifts also lead to a
complete suppression of angular momentum exchange between the nuclear spin
ensemble and its environment, resulting in nuclear spin relaxation times
exceeding an hour. Remarkably, the position dependent axes of quadrupolar
interactions render magnetic field sweeps inherently non-adiabatic, thereby
causing an irreversible loss of nuclear spin polarization.Comment: 15 pages, 3 figure
Domain wall motion governed by the spin Hall effect
Perpendicularly magnetized materials have attracted tremendous interest due
to their high anisotropy, which results in extremely narrow, nano-sized domain
walls. As a result, the recently studied current-induced domain wall motion
(CIDWM) in these materials promises to enable a novel class of data, memory,
and logic devices. In this letter, we propose the spin Hall effect as a
radically new mechanism for CIDWM. We are able to carefully tune the net spin
Hall current in depinning experiments on Pt/Co/Pt nanowires, offering unique
control over CIDWM. Furthermore, we determine that the depinning efficiency is
intimately related to the internal structure of the domain wall, which we
control by small fields along the nanowire. This new manifestation of CIDWM
offers a very attractive new degree of freedom for manipulating domain wall
motion by charge currents, and sheds light on the existence of contradicting
reports on CIDWM in perpendicularly magnetized materials
Electron-Spin Precession in Dependence of the Orientation of the External Magnetic Field
Electron-spin dynamics in semiconductor-based heterostructures has been investigated in oblique magnetic fields. Spins are generated optically by a circularly polarized light, and the dynamics of spins in dependence of the orientation (θ) of the magnetic field are studied. The electron-spin precession frequency, polarization amplitude, and decay rate as a function ofθare obtained and the reasons for their dependences are discussed. From the measured data, the values of the longitudinal and transverse components of the electrong-factor are estimated and are found to be in good agreement with those obtained in earlier investigations. The possible mechanisms responsible for the observed effects are also discussed
Unconventional motional narrowing in the optical spectrum of a semiconductor quantum dot
Motional narrowing refers to the striking phenomenon where the resonance line
of a system coupled to a reservoir becomes narrower when increasing the
reservoir fluctuation. A textbook example is found in nuclear magnetic
resonance, where the fluctuating local magnetic fields created by randomly
oriented nuclear spins are averaged when the motion of the nuclei is thermally
activated. The existence of a motional narrowing effect in the optical response
of semiconductor quantum dots remains so far unexplored. This effect may be
important in this instance since the decoherence dynamics is a central issue
for the implementation of quantum information processing based on quantum dots.
Here we report on the experimental evidence of motional narrowing in the
optical spectrum of a semiconductor quantum dot broadened by the spectral
diffusion phenomenon. Surprisingly, motional narrowing is achieved when
decreasing incident power or temperature, in contrast with the standard
phenomenology observed for nuclear magnetic resonance
Photo-Induced Spin Dynamics in Semiconductor Quantum Wells
We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence (PL) measurements excited with circularly polarized light. The bias-dependent circular polarization of PL (PPL) with and without magnetic field is studied. ThePPLwithout magnetic field is found to be decayed with an enhancement of increasing the strength of the negative bias. However,PPLin a transverse magnetic field shows oscillations under an electric bias, indicating that the precession of electron spin occurs in quantum wells. The results are discussed based on the electron–hole exchange interaction in the electric field
Spin- and energy relaxation of hot electrons at GaAs surfaces
The mechanisms for spin relaxation in semiconductors are reviewed, and the
mechanism prevalent in p-doped semiconductors, namely spin relaxation due to
the electron-hole exchange interaction, is presented in some depth. It is shown
that the solution of Boltzmann-type kinetic equations allows one to obtain
quantitative results for spin relaxation in semiconductors that go beyond the
original Bir-Aronov-Pikus relaxation-rate approximation. Experimental results
using surface sensitive two-photon photoemission techniques show that the spin
relaxation-time of electrons in p-doped GaAs at a semiconductor/metal surface
is several times longer than the corresponding bulk spin relaxation-times. A
theoretical explanation of these results in terms of the reduced density of
holes in the band-bending region at the surface is presented.Comment: 33 pages, 12 figures; earlier submission replaced by corrected and
expanded version; eps figures now included in the tex
Spin Seebeck insulator
Thermoelectric generation is an essential function of future energy-saving
technologies. However, this generation has been an exclusive feature of
electric conductors, a situation which inflicts a heavy toll on its
application; a conduction electron often becomes a nuisance in thermal design
of devices. Here we report electric-voltage generation from heat flowing in an
insulator. We reveal that, despite the absence of conduction electrons, a
magnetic insulator LaY2Fe5O12 converts a heat flow into spin voltage. Attached
Pt films transform this spin voltage into electric voltage by the inverse spin
Hall effect. The experimental results require us to introduce thermally
activated interface spin exchange between LaY2Fe5O12 and Pt. Our findings
extend the range of potential materials for thermoelectric applications and
provide a crucial piece of information for understanding the physics of the
spin Seebeck effect.Comment: 19 pages, 5 figures (including supplementary information
Ballistic Spin Resonance
The phenomenon of spin resonance has had far reaching influence since its
discovery nearly 70 years ago. Electron spin resonance (ESR) driven by high
frequency magnetic fields has informed our understanding of quantum mechanics,
and finds application in fields as diverse as medicine and quantum information.
Spin resonance induced by high frequency electric fields, known as electric
dipole spin resonance (EDSR), has also been demonstrated recently. EDSR is
mediated by spin-orbit interaction (SOI), which couples the spin degree of
freedom and the momentum vector. Here, we report the observation of a novel
spin resonance due to SOI that does not require external driving fields.
Ballistic spin resonance (BSR) is driven by an internal spin-orbit field that
acts upon electrons bouncing at gigaHertz frequencies in narrow channels of
ultra-clean two-dimensional electron gas (2DEG). BSR is manifested in
electrical measurements of pure spin currents as a strong suppression of spin
relaxation length when the motion of electrons is in resonance with spin
precession. These findings point the way to gate-tunable coherent spin
rotations in ballistic nanostructures without external a.c. fields.Comment: 24 pages, including supplementary material
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