Room temperature electron spin relaxation in GaInNAs multiple quantum wells at 1.3 mu m

The authors report a direct measurement of electron spin relaxation in GaInNAs semiconductor multiple quantum wells at room temperature. Multiple quantum wells of widths 5.8, 7, and 8 nm exhibiting excitonic absorption around 1.3 mu m have been studied. Spin relaxation times were found to increase with well width in the range of 77-133 ps. The spin relaxation time dependence on first electron confinement energy suggests the Elliot-Yafet mechanism [A. Tackeuchi , Physica B 272, 318 (1999)] as the dominant relaxation process. (c) 2006 American Institute of Physics.</p

Resonant Absorption in GaAs-Based Nanowires by Means of Photo-Acoustic Spectroscopy

Semiconductor nanowires made of high refractive index materials can couple the incoming light to specific waveguide modes that offer resonant absorption enhancement under the bandgap wavelength, essential for light harvesting, lasing and detection applications. Moreover, the non-trivial ellipticity of such modes can offer near field interactions with chiral molecules, governed by near chiral field. These modes are therefore very important to detect. Here, we present the photo-acoustic spectroscopy as a low-cost, reliable, sensitive and scattering-free tool to measure the spectral position and absorption efficiency of these modes. The investigated samples are hexagonal nanowires with GaAs core; the fabrication by means of lithography-free molecular beam epitaxy provides controllable and uniform dimensions that allow for the excitation of the fundamental resonant mode around 800 nm. We show that the modulation frequency increase leads to the discrimination of the resonant mode absorption from the overall absorption of the substrate. As the experimental data are in great agreement with numerical simulations, the design can be optimized and followed by photo-acoustic characterization for a specific application

Back grating optimization for light trapping in thin-film quantum dot solar cells

The work presents the design of a diffraction back grating for light-trapping in thin-film GaAs-based quantum dot solar cells. Uni-periodic and bi-periodic gratings made of off-theshelf almost transparent dielectric materials routinely used in photolithography are considered. Gratings are wave-optics simulated by rigorous coupled wave analysis. Optimizing the shape and geometrical aspect ratio of the grating, almost quadrupled photocurrent from quantum dots is demonstrated

Comparison of 'shallow' and 'deep' junction architectures for MBE-grown InAs/GaAs quantum dot solar cells

We report on the fabrication of InAs/GaAs quantum dot solar cells with high open circuit voltage by molecular beam epitaxy. `Shallow' and `deep' junction architectures were compared. The highest open circuit voltage of 0.94 V was obtained for the `shallow' junction configuration. The open circuit voltage of InAs quantum dot solar cells decreased only by ~40 mV compared to GaAs reference cells for both junction architectures indicating high quality quantum dots. The open circuit voltage of InAs/GaAs quantum dot solar cells was also found to be dependent on the size of quantum dots

Back Reflector with Diffractive Gratings for Light-Trapping in Thin-Film III-V Solar Cells

We report on the development of light-Trapping architectures applied to thin-film solar cells. In particular, we focus on enhancing the absorption at 1-eV spectral range for dilute nitride and quantum dot materials and report on the influence of planar back reflectors on the photovoltaic properties. Moreover, we discuss the properties of polymer diffraction gratings with enhanced light-Trapping capability pointing to advantageous properties of pyramidal gratings. In order to understand the suitability of these polymer grating architectures for space applications, we have performed an electron irradiation study (1 MeV) revealing the absence of reflectance changes up to doses of 1×1015 e-/cm

Antibacterial activity of the aqueous extract of Thonningia sanguinea against Extended-Spectrum-b-Lactamases (ESBL) producing Escherichia coli and Klebsiella pneumoniae strains

Purpose: The aim of this study was to evaluate the antimicrobial activity of Thonningia sanguinea against two sensitive and two multi-drug resistant (ESBL) Enterobacteria strains namely Escherichia coli and Klebsiella pneumoniae. Method: The confirmation of the ESBL producing strains was done by the double-disc synergy tests and the broth dilution method was used for the determination of the antimicrobial parameters (MIC and MBC) on these sensitive and ESBL producing strains. Results: The two sensitive strains had the same MIC and MBC values respectively 3.125 mg /ml and 12.50 mg/ml. The ESBL producing strains also had the same MIC of 6.25 mg /ml and MBC values of 25 mg/ml. The extract was bactericidal for all tested strains. Conclusion: The results suggest that the flowers of T. sanguinea can be used in association with antibiotics for alternative therapy of diseases caused by ESBL producing E. coli, Klebsiella pneumoniae. Keywords: Antimicrobial activity, Thonningia sanguinea, ESBL producing strains; E. coli > Tropical Journal of Pharmaceutical Research Vol. 6 (3) 2007: pp. 779-78

Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures

The excitation energy-dependent nature of Raman scattering spectrum, vibration, electronic or both, has been studied using different excitation sources on as-grown and annealed n- and p-type modulation-doped Ga(1 − x)In(x)N(y)As(1 − y)/GaAs quantum well structures. The samples were grown by molecular beam technique with different N concentrations (y = 0%, 0.9%, 1.2%, 1.7%) at the same In concentration of 32%. Micro-Raman measurements have been carried out using 532 and 758 nm lines of diode lasers, and the 1064 nm line of the Nd-YAG laser has been used for Fourier transform-Raman scattering measurements. Raman scattering measurements with different excitation sources have revealed that the excitation energy is the decisive mechanism on the nature of the Raman scattering spectrum. When the excitation energy is close to the electronic band gap energy of any constituent semiconductor materials in the sample, electronic transition dominates the spectrum, leading to a very broad peak. In the condition that the excitation energy is much higher than the band gap energy, only vibrational modes contribute to the Raman scattering spectrum of the samples. Line shapes of the Raman scattering spectrum with the 785 and 1064 nm lines of lasers have been observed to be very broad peaks, whose absolute peak energy values are in good agreement with the ones obtained from photoluminescence measurements. On the other hand, Raman scattering spectrum with the 532 nm line has exhibited only vibrational modes. As a complementary tool of Raman scattering measurements with the excitation source of 532 nm, which shows weak vibrational transitions, attenuated total reflectance infrared spectroscopy has been also carried out. The results exhibited that the nature of the Raman scattering spectrum is strongly excitation energy-dependent, and with suitable excitation energy, electronic and/or vibrational transitions can be investigated

Thin-film InAs/GaAs quantum dot solar cell with planar and pyramidal back reflectors

Quantum dot solar cells are promising for next-generation photovoltaics owing to their potential for improved device efficiency related to bandgap tailoring and quantum confinement of charge carriers. Yet implementing effective photon management to increase the absorptivity of the quantum dots is instrumental. To this end, the performance of thin-film InAs/GaAs quantum dot solar cells with planar and structured back reflectors is reported. The experimental thin-film solar cells with planar reflectors exhibited a bandgap-voltage offset of 0.3 V with an open circuit voltage of 0.884 V, which is one of the highest values reported for quantum dot solar cells grown by molecular beam epitaxy to our knowledge. Using measured external quantum efficiency and current-voltage characteristics, we parametrize a simulation model that was used to design an advanced reflector with diffractive pyramidal gratings revealing a 12-fold increase of the photocurrent generation in the quantum dot layers

Circular polarization switching and bistability in an optically injected 1300 nm spin-vertical cavity surface emitting laser

We report the experimental observation of circular polarization switching (PS) and polarization bistability (PB) in a 1300 nm dilute nitride spin-vertical cavity surface emitting laser (VCSEL). We demonstrate that the circularly polarized optical signal at 1300 nm can gradually or abruptly switch the polarization ellipticity of the spin-VCSEL from right-to-left circular polarization and vice versa. Moreover, different forms of PS and PB between right- and left-circular polarizations are observed by controlling the injection strength and the initial wavelength detuning. These results obtained at the telecom wavelength of 1300 nm open the door for novel uses of spin-VCSELs in polarization sensitive applications in future optical systems

~1400-nm continuous-wave diamond Raman laser intracavity-pumped by an InGaAs semiconductor disk laser

We present a ~1400nm-emitting diamond Raman laser intracavity-pumped by an ~1180nm semiconductor disk laser. We measured a maximum output power of 2.3 W at ~1400nm with an output coupling of 3.5%. The Raman laser was tunable from 1373 to 1415nm using a 4-mm-thick birefringent filter