Fabrication and study of the organic-inorganic semiconductor diodes formed on n-Si

We report fabrication and electrical characterization of the organic-inorganic semiconductor diode structures formed by evaporating thin films of three novel low molecular mass organic compounds on n-type Si substrates. The organic compounds containing carbazole and triphenylamine structural units, namely: 9,9'-bis(4-butylphenyl)-3,3'-bicarbazolyl (BPBC), 4-(1H-perimidin-2-yl)-N,N-diphenylbenzenamine (PER) and 9,9'-diethyl-3,3'-bicarbazolyl (EBC) have been synthesized. The current-voltage characteristics of the Au/(BPBC, EBC, PER)/n-Si diode structures measured at T = 295 K revealed rectifying behavior with a potential barrier height values of 0.71 eV, 0.73 eV, 0.76 eV, respectively

Šilumos ūkio problemų analizė šalies regionuose

District heating (DH) companies deal with serious economic-financial problems during the transition period towards market economics. The paper investigates economic-financial situation of DH companies. Significant difference between heat tariffs and production costs, huge commercial heat supply losses has been identified with the help of simulation mathematical model. All this causes damage for the sustainable energy development. The mathematical model of the heat sector is based on the establishment of info system of the energy sector and may be used as a tool for the assessment and revision of a state policy

Growth and investigation of oxide heterostructures based on half-metallic Fe3O4

We report thin films of ferromagnetic Fe3O4 (magnetite) grown by a reactive magnetron sputtering at T=300÷450°C on lattice-matched MgO, and bilayer structures composed of Fe3O4 and underlying epitaxial films of highly conductive electron-doped In2O3 , LaNiO3 , and antiferromagnetic CoO. The prepared Fe3O4 /MgO films and the bilayer structures demonstrated clearly defined resistance anomaly at Verwey transition point (T V ~100-120K). Formation of high resistance interlayer was indicated between the adjacent conducting Fe3O4 and LaNiO 3 layers. However, relatively low interface resistivity of about 0.1Ωcm 2 (at T=300K) was estimated for the patterned Fe3O4 /In2O3 bilayer structures. Vertical electrical transport measurements revealed strong nonlinearity in the I-U dependences of the Fe3O4 /In2O3 interface at T<T V

Lietuvos mokslas ir pramonė

Vytauto Didžiojo universitetasŽemės ūkio akademij

Lietuvos mokslas ir pramonė

Vytauto Didžiojo universitetasŽemės ūkio akademij

Lietuvos mokslas ir pramonė

Vytauto Didžiojo universitetasŽemės ūkio akademij

Kinetics of residual stresses in electrochemically doped ITO thin films

Vytauto Didžiojo universitetasŽemės ūkio akademij

Physical properties of ITO thin films prepared by DC sputtering

Vytauto Didžiojo universitetasŽemės ūkio akademij