Low-power multi-chip module and board-level links for data transfer

Advanced device technologies such as Vertical Cavity Surface-Emitting Lasers (VCSELs) and diffractive micro lenses can be obtained with novel packaging techniques to allow low-power interconnection of parallel optical signals. These interconnections can be realized directly on circuit boards, in a multi-chip module format, or in packages that emulate electrical connectors. For applications such as stacking of Multi-Chip Module (MCM) layers, the links may be realized in bi-directional form using integrated diffractive microlenses. In the stacked MCM design, consumed electrical power is minimized by use of a relatively high laser output from high efficiency VCSELs, and a receiver design that is optimized for low power, at the expense of dynamic range. Within certain constraints, the design may be extended to other forms such as board-level interconnects

Low-power, parallel photonic interconnections for Multi-Chip Module applications

New applications of photonic interconnects will involve the insertion of parallel-channel links into Multi-Chip Modules (MCMs). Such applications will drive photonic link components into more compact forms that consume far less power than traditional telecommunication data links. MCM-based applications will also require simplified drive circuitry, lower cost, and higher reliability than has been demonstrated currently in photonic and optoelectronic technologies. The work described is a parallel link array, designed for vertical (Z-Axis) interconnection of the layers in a MCM-based signal processor stack, operating at a data rate of 100 Mb/s. This interconnect is based upon high-efficiency VCSELs, HBT photoreceivers, integrated micro-optics, and MCM-compatible packaging techniques

High-speed vertical cavity surface emitting lasers

High speed modulation and pulsing are reported for oxide-confined vertical cavity surface emitting laser diodes (VCSELs) with inverted doping and proton implantation to reduce the extrinsic limitations

Life-testing oxide confined VCSELs: Too good to last?

The use of native oxides (selective oxidation) in vertical cavity surface emitting lasers has produced dramatic improvements in these laser diodes but has also been suspected of causing poor reliability because of incidental reports of short lifetimes and physical considerations. Here we discuss the results of thousands of hours life-tests for oxide confined and implant confined devices at current densities from 1 to 12 kA/cm{sup 2}. There was a single infant mortality failure from a sample of 14 oxide confined lasers with the remainder showing relatively stable operation. The failed device is analyzed in terms of light current characteristics and near-field electroluminescence images, and potential screening criteria are proposed

Metallization and packaging of compound semiconductor devices at Sandia National Laboratories

Recent advances in compound semiconductor technology utilize a variety of metal thin films fabricated by thermal and electron-beam evaporation, and electroplating. An overview of metal processes used by Sandia`s Compound Semiconductor Research Laboratory is presented. Descriptions of electrical n-type and p-type ohmic contact alloys, interconnect metal, and metal layers specifically included for packaging requirements are addressed. Several illustrations of devices incorporating gold plated air bridges are included. ``Back-end`` processes such as flip-chip under bump metallurgy with fluxless solder reflow and plated solder processes are mentioned as current research areas

Low-power modular parallel photonic data links

Many of the potential applications for parallel photonic data links could benefit from a bi-directional Optoelectronic Multi-Chip Module (OEMCM), where the optical transmitter, receiver, and first-level interface electronics are combined into a single package. It would be desirable for such a module to exhibit low power consumption, have a simple electronic interface that can operate at a variety of speeds, and possess a capability to use interchangeable optics for a variety of external connections. Here, we describe initial results for a parallel photonic link technology that exhibits those properties. This link uses high-efficiency, back-emitting, two-dimensional Vertical Cavity Surface-Emitting Laser (VCSEL) arrays operating at 980 nm. The lasers are matched, via integrated microlenses, to corresponding monolithically-integrated photoreceiver arrays that are constructed in a InGaAs/InP Heterojunction Bipolar Transistor (HBT) technology. In initial breadboard-level tests, the photonic data channels built with these devices have been demonstrated with direct (3.3 V) CMOS drive of the VCSELs and a corresponding CMOS interface at the photoreceiver outputs. These links have shown electrical power consumption as low as 42 mW per channel for a 50% average duty cycle while operating at 100 Mb/s