Operation modes of battery chargers for electric vehicles in the future smart grids

This paper presents an on-board bidirectional battery charger for Electric Vehicles (EVs), which operates in three different modes: Grid-to- Vehicle (G2V), Vehicle-to-Grid (V2G), and Vehicle-to-Home (V2H). Through these three operation modes, using bidirectional communications based on Information and Communication Technologies (ICT), it will be possible to exchange data between the EV driver and the future smart grids. This collaboration with the smart grids will strengthen the collective awareness systems, contributing to solve and organize issues related with energy resources and power grids. This paper presents the preliminary studies that results from a PhD work related with bidirectional battery chargers for EVs. Thus, in this paper is described the topology of the on-board bidirectional battery charger and the control algorithms for the three operation modes. To validate the topology it was developed a laboratory prototype, and were obtained experimental results for the three operation modes.FEDER Funds, through the Operational Programme for Competitiveness Factors – COMPETE, and by National Funds through FCT – Foundation for Science and Technology of Portugal, under the project FCOMP-01-0124- FEDER-022674, and QREN project AAC n.º36/SI/2009 – 1384

Abnormal Myocardial Contractility After Pediatric Heart Transplantation by Cardiac MRI

Cardiolog

A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From I-V, C-V, and G-V Measurements

We present a defect spectroscopy technique to profile the energy and spatial distribution of defects within a material stack from leakage current (J-V), capacitance (C-V), and conductance (G-V) measurements. The technique relies on the concept of sensitivity maps (SMs) that identify the bandgap regions, where defects affect those electrical characteristics. The information provided by SMs are used to reproduce J-V, C-V, and G-V data measured at different temperatures and frequencies by means of physics-based simulations relying on an accurate description of carrier-defect interactions. The proposed defect spectroscopy technique is applied to ZrO2-based metal-insulator-metal structures of different compositions for dynamic random-access memory capacitor applications. The origin of the observed voltage, temperature, and frequency dependencies of the I-V, C-V, and G-V data is understood, and the atomic structure of the relevant stack defects is identified