305 research outputs found
Heat Transport across Interfaces for the Optimization of Heat Sinking in Device Applications
Heterogenous integration of materials and devices opens huge opportunities for exploiting device structures which benefit from an optimal combination of electronic and thermal material properties. It is critically important to assess heat transfer across their interfaces to avoid thermal bottlenecks resulting in excessive device temperatures though. Experimental techniques to assess thermal conductivity of materials and thermal boundary resistance between materials are reviewed, with examples from GaN-on-Diamond, diamond to metal diamond composites
Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements
Solid immersion lenses for enhancing the optical resolution of thermal and electroluminescence mapping of GaN-on-SiC transistors
A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution
Time Resolved Hyperspectral Quantum Rod Thermography of Microelectronic Devices:Temperature Transients in a GaN HEMT
Thermal profiles within the channel of planar gunn diodes using micro-particle sensors
The paper describes the use of a novel microparticle sensor (~3 μm diameter) and infra-red (IR) microscopy to measure the temperature profile within the active channel (typically 3 μm length and 120 μm width) of planar Gunn diodes. The method has enabled detailed temperature measurements showing an asymmetrical temperature profile along the active width of these devices. The asymmetrical temperature profile suggests a similar behaviour in the channel current density, which may contribute to the lower than expected RF output power
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