4 research outputs found
Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy
AlGaAs / GaAs photosensitive structures were grown by molecular beam epitaxy and photodetector de-vices were fabricated. The structures were characterized by reflection high-energy electron diffraction
(RHEED), reflectance anisotropy spectroscopy (RAS) and atomic force microscopy (AFM). Spectral charac-teristics of p-i-n structures were calculated. It is shown that obtained structures have atomically smooth
surface and abrupt heterointerfaces. Room-temperature I-V measurements of fabricated photodetectors
showed low dark current Id=3.38 nA at reverse bias Urev=5 V.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3613
Monolithic Silicon Photodetector - Detector of Ionizing Radiation Based on Functional Integrated MOS Structures
This paper describes the principle of operation, construction, architecture and fabrication of a new type of
monolithic silicon coordinate photodetector - detector of optical and ionizing radiation (MSCP) on the basis of
functional integrated MOS structures. The analytical estimation of electrophysical characteristics MSCP is
given. It is shown that MSCP is a specialized monolithic silicon VLSI containing two-dimensional pixel array
with high and low voltage functionally integrated structures (FIS) and peripheral electronic circuits of
amplification and signal processing matrix. Estimations and presents comparative characteristics are presented.
They show potential MSCP possibilities for registration of optical and ionizing radiation. Experimental results of
-particles and electrons registration. The possible areas of application, with the possibility of its use in a wide X-ray panels medical supplies, X-rays, etc are considered.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3625
Monolithic Silicon Photodetector - Detector of Ionizing Radiation Based on Functional Integrated MOS Structures
This paper describes the principle of operation, construction, architecture and fabrication of a new type of
monolithic silicon coordinate photodetector - detector of optical and ionizing radiation (MSCP) on the basis of
functional integrated MOS structures. The analytical estimation of electrophysical characteristics MSCP is
given. It is shown that MSCP is a specialized monolithic silicon VLSI containing two-dimensional pixel array
with high and low voltage functionally integrated structures (FIS) and peripheral electronic circuits of
amplification and signal processing matrix. Estimations and presents comparative characteristics are presented.
They show potential MSCP possibilities for registration of optical and ionizing radiation. Experimental results of
-particles and electrons registration. The possible areas of application, with the possibility of its use in a wide X-ray panels medical supplies, X-rays, etc are considered.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3625