1,798 research outputs found
Nanomechanical displacement detection using coherent transport in ordered and disordered graphene nanoribbon resonators
Graphene nanoribbons provide an opportunity to integrate phase-coherent
transport phenomena with nanoelectromechanical systems (NEMS). Due to the
strain induced by a deflection in a graphene nanoribbon resonator, coherent
electron transport and mechanical deformations couple. As the electrons in
graphene have a Fermi wavelength \lambda ~ a_0 = 1.4 {\AA}, this coupling can
be used for sensitive displacement detection in both armchair and zigzag
graphene nanoribbon NEMS. Here it is shown that for ordered as well as
disordered ribbon systems of length L, a strain \epsilon ~ (w/L)^2 due to a
deflection w leads to a relative change in conductance \delta G/G ~ (w^2/a_0L).Comment: 4 Pages, 4 figure
Electronic Raman scattering in Tl2Ba2CuO6+x: symmetry of the order parameter, oxygen doping effects, and normal state scattering
Single crystals of the optimally doped, moderately and strongly overdoped
high temperature superconductor Tl2Ba2CuO6+x (Tl-2201) with Tc=80, 56 and 30K,
respectively, have been investigated by polarized Raman scattering. By taking
the peak position of the B_1g component of electronic Raman scattering as
2Delta_0 we found that the reduced gap value (2Delta_0/k_BT_c) strongly
decreases with increasing doping. The behavior of the low frequency scattering
for the B_1g and B_2g scattering components is similar for optimally doped and
overdoped crystals and can be described by a w^3 - and w -law, respectively,
which is consistent with a d-wave symmetry of the order parameter. In contrast
to the optimally doped Tl-2201 in both, moderately and strongly overdoped
Tl-2201, the relative (compared to the B_1g) intensity of the A_1g scattering
component is suppressed. We suggest that the van Hove singularity is
responsible for the observed changes of Raman intensity and reduced gap value
with doping. Electronic Raman scattering in the normal state is discussed in
the context of the scattering from impurities and compared to the existing
infrared data. The scattering rate evaluated from the Raman measurements is
smaller for the overdoped samples, compared to the moderately overdoped
samples.Comment: 7 pages, 7 figure
Interface states in junctions of two semiconductors with intersecting dispersion curves
A novel type of shallow interface state in junctions of two semiconductors
without band inversion is identified within the envelope function
approximation, using the two-band model. It occurs in abrupt junctions when the
interband velocity matrix elements of the two semiconductors differ and the
bulk dispersion curves intersect. The in-plane dispersion of the interface
state is found to be confined to a finite range of momenta centered around the
point of intersection. These states turn out to exist also in graded junctions,
with essentially the same properties as in the abrupt case.Comment: 1 figur
Planar Heterostructure Graphene -- Narrow-Gap Semiconductor -- Graphene
We investigate a planar heterostructure composed of two graphene films
separated by a narrow-gap semiconductor ribbon. We show that there is no the
Klein paradox when the Dirac points of the Brillouin zone of graphene are in a
band gap of a narrow-gap semiconductor. There is the energy range depending on
an angle of incidence, in which the above-barrier damped solution exists.
Therefore, this heterostructure is a "filter" transmitting particles in a
certain range of angles of incidence upon a potential barrier. We discuss the
possibility of an application of this heterostructure as a "switch".Comment: 9 pages, 2 figure
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