Self-Assembled Local Artificial Substrates of GaAs on Si Substrate

We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the density from 107 to 109 cm−2. The islands show a standard deviation of base size distribution below 10% and their shape evolves changing the aspect ratio from 0.3 to 0.5 as size increases. Due to their characteristics, these islands are suitable to be used as local artificial substrates for the integration of III–V quantum nanostructures directly on silicon substrate

Investigation of turbulence in reversed field pinch plasma by using microwave imaging reflectometry

Turbulence in the reversed field pinch (RFP) plasma has been investigated by using the microwave imaging reflectometry in the toroidal pinch experiment RX (TPE-RX). In conventional RFP plasma, the fluctuations are dominated by the intermittent blob-like structures. These structures are accompanied with the generation of magnetic field, the strong turbulence, and high nonlinear coupling among the high and low k modes. The pulsed poloidal current drive operation, which improves the plasma confinement significantly, suppresses the dynamo, the turbulence, and the blob-like structures.This work is supported by the NINS Imaging Science Project (Grant No. NIFS08KEIN0021), SOKENDAI (Grant No. NIFS08GLPP003), and the Budget for Nuclear Research of the Ministry of Education, Culture, Sports, Science and Technology of Japan

Correlating the nanostructure and electronic properties of InAs nanowires

The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are ~4X larger in the nominally defect-free segments of the wire. We also find that dark field optical intensity is correlated with the mobility, suggesting a simple route for selecting wires with a low defect density. At low temperatures, FETs fabricated on high defect density segments of InAs nanowires showed transport properties consistent with single electron charging, even on devices with low resistance ohmic contacts. The charging energies obtained suggest quantum dot formation at defects in the wires. These results reinforce the importance of controlling the defect density in order to produce high quality electrical and optical devices using InAs nanowires.Comment: Related papers at http://pettagroup.princeton.ed

Microscopic deformation of tungsten surfaces by high energy and high flux helium/hydrogen particle bombardment with short pulses

High energy and high flux helium and hydrogen particles were irradiated with polycrystalline tungsten specimen by using neutral beam injection (NBI) facility in National Institute of Advanced Industrial Science and Technology (AIST). Incidence energy and flux of NBI shot are 25 keV and 8.9×10 22 ions/m 2 s, respectively. Duration time of each shot was 30 ms with 6 min interval. Surface temperature may be reached over 1800 K. In the cases of helium irradiation, total fluence was selected 2 cases of 1.5×10 22 ions/m 2 s and 4.1×10 22 He/m 2 s. The former case, large sized blisters with the diameter of 500 nm were densely observed. While, the latter case, blisters was disappeared and fine nano-branch structures appeared instead of blisters. Cross-sectional transmission electron microscope (TEM) observation was performed by using focused ion beam (FIB) technique

Intravenous immunoglobulin contributes to the control of antimelanoma differentiation-associated protein 5 antibody-associated dermatomyositis with palmar violaceous macules/papules

Autoantibodies to melanoma differentiation-associated protein 5 (MDA5) are associated with a subset of patients with dermatomyositis (DM) who have rapidly progressive interstitial lung disease (RP-ILD) with poor prognosis. Intensive immunosuppressive therapy is initiated before irreversible lung damage can occur; however, there are few lines of evidence for the treatment of RP-ILD. Here, we report three cases of anti-MDA5 antibody-associated DM with RP-ILD in which the patients were treated with combined-modality therapy, including high-dose prednisolone, tacrolimus, intravenous cyclophosphamide and intravenous immunoglobulin (IVIG). In all three cases, serum ferritin levels, which are known to represent the disease activity of RP-ILD, were decreased after IVIG administration. IVIG might contribute to the control of the disease activity of anti-MDA5 antibody-positive DM. Moreover, palmar violaceous macules/papules around the interphalangeal joints, which was observed in all three cases in the incipient stage, might be a useful sign in suggesting a diagnosis of anti-MDA5 antibody-associated DM

Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures

Structure of the Ga-stabilized GaAs(001)-c(8x2) surface has been studied using rocking-curve analysis of reflection high-energy electron diffraction (RHEED). The c(8x2) structure emerges at temperatures higher than 600C, but is unstable with respect to the change to the (2x6)/(3x6) structure at lower temperatures. Our RHEED rocking-curve analysis at high temperatures revealed that the c(8x2) surface has the structure which is basically the same as that recently proposed by Kumpf et al. [Phys. Rev. Lett. 86, 3586 (2001)]. We found that the surface atomic configurations are locally fluctuated at high temperatures without disturbing the c(8x2) periodicity.Comment: 14 pages, 4 figures, 1 tabl

One-step synthesis of PbSe-ZnSe composite thin film

This study investigates the preparation of PbSe-ZnSe composite thin films by simultaneous hot-wall deposition (HWD) from multiple resources. The XRD result reveals that the solubility limit of Pb in ZnSe is quite narrow, less than 1 mol%, with obvious phase-separation in the composite thin films. A nanoscale elemental mapping of the film containing 5 mol% PbSe indicates that isolated PbSe nanocrystals are dispersed in the ZnSe matrix. The optical absorption edge of the composite thin films shifts toward the low-photon-energy region as the PbSe content increases. The use of a phase-separating PbSe-ZnSe system and HWD techniques enables simple production of the composite package