Electrical compensation and cation vacancies in Al rich Si-doped AlGaN

We report positron annihilation results on vacancy defects in Si-doped Al0.90Ga0.10N alloys grown by metalorganic vapor phase epitaxy. By combining room temperature and temperature-dependent Doppler broadening measurements, we identify negatively charged in-grown cation vacancies in the concentration range from below 1 x 10 16 cm(-3) to 2 x 10 18 cm(-3) in samples with a high C content, strongly correlated with the Si doping level in the samples ranging from 1 x 10 17 cm(-3) to 7 x 10 18 cm(-3). On the other hand, we find predominantly neutral cation vacancies with concentrations above 5 x 10 18 cm(-3) in samples with a low C content. The cation vacancies are important as compensating centers only in material with a high C content at high Si doping levels.Peer reviewe

On neutron number dependence of B(E1;0+ --> 1-) reduced transition probability

A neutron number dependence of the E1 0+ --> 1- reduced transition probability in spherical even--even nuclei is analysed within the Q--phonon approach in the fermionic space to describe the structure of collective states. Microscopic calculations of the E1 0+ --> 1- transition matrix elements are carried out for the Xe isotopes based on the RPA for the ground state wave function. A satisfactory description of the experimental data is obtained.Comment: 8 pages, 4 figure

E(5), X(5), and Prolate to Oblate Shape Phase Transitions in Relativistic Hartree Bogoliubov Theory

Relativistic mean field theory with the NL3 force is used for producing potential energy surfaces (PES) for series of isotopes suggested as exhibiting critical point symmetries. Relatively flat PES are obtained for nuclei showing the E(5) symmetry, while in nuclei corresponding to the X(5) case, PES with a bump are obtained. The PES corresponding to the Pt chain of isotopes suggest a transition from prolate to oblate shapes at 186-Pt.Comment: 21 pages, LaTeX, including 14 .eps figure

Properties of the 5- state at 839 keV in 176Lu and the s-process branching at A = 176

The s-process branching at mass number A = 176 depends on the coupling between the high-K ground state and a low-lying low-K isomer in 176Lu. This coupling is based on electromagnetic transitions via intermediate states at higher energies. The properties of the lowest experimentally confirmed intermediate state at 839 keV are reviewed, and the transition rate between low-K and high-K states under stellar conditions is calculated on the basis of new experimental data for the 839 keV state. Properties of further candidates for intermediate states are briefly analyzed. It is found that the coupling between the high-K ground state and the low-K isomer in 176Lu is at least one order of magnitude stronger than previously assumed leading to crucial consequences for the interpretation of the 176Lu/176Hf pair as an s-process thermometer.Comment: 11 pages, 4 figures accepted for publication in Phys. Rev.

Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N

A series of Si-doped AlN-rich AlGaN layers with low resistivities was characterized by a combination of nanoscale imaging techniques. Utilizing the capability of scanning electron microscopy to reliably investigate the same sample area with different techniques, it was possible to determine the effect of doping concentration, defect distribution, and morphology on the luminescence properties of these layers. Cathodoluminescence shows that the dominant defect luminescence depends on the Si-doping concentration. For lower doped samples, the most intense peak was centered between 3.36 eV and 3.39 eV, while an additional, stronger peak appears at 3 eV for the highest doped sample. These peaks were attributed to the (VIII-ON)2− complex and the V3−III vacancy, respectively. Multimode imaging using cathodoluminescence, secondary electrons, electron channeling contrast, and atomic force microscopy demonstrates that the luminescence intensity of these peaks is not homogeneously distributed but shows a strong dependence on the topography and on the distribution of screw dislocations.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeBMBF, 13N12587, Photonische Plattformtechnologie zur ultrasensitiven und hochspezifischen biochemischen Sensorik auf Basis neuartiger UV-LEDs (UltraSens