674 research outputs found
Time-Averaged Adiabatic Potentials: Versatile traps and waveguides for ultracold quantum gases
We demonstrate a novel class of trapping potentials, time-averaged adiabatic
potentials (TAAP) which allows the generation of a large variety of traps and
waveguides for ultracold atoms. Multiple traps can be coupled through
controllable tunneling barriers or merged altogether. We present analytical
expressions for pancake-, cigar-, and ring- shaped traps. The ring-geometry is
of particular interest for guided matter-wave interferometry as it provides a
perfectly smooth waveguide of controllable diameter, and thus a tunable
sensitivity of the interferometer.Comment: 5 pages, 3 figure
Transconductance fluctuations as a probe for interaction induced quantum Hall states in graphene
Transport measurements normally provide a macroscopic, averaged view of the
sample, so that disorder prevents the observation of fragile interaction
induced states. Here, we demonstrate that transconductance fluctuations in a
graphene field effect transistor reflect charge localization phenomena on the
nanometer scale due to the formation of a dot network which forms near
incompressible quantum states. These fluctuations give access to fragile
broken-symmetry and fractional quantum Hall states even though these states
remain hidden in conventional magnetotransport quantities.Comment: 6 pages, 3 figure
Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima
High mobility two-dimensional electron systems exhibit vanishing resistance
over broad magnetic field intervals upon excitation with microwaves, with a
characteristic reduction of the resistance with increasing radiation intensity
at the resistance minima. Here, we report experimental results examining the
voltage - current characteristics, and the resistance at the minima vs. the
microwave power. The findings indicate that a non-linear V-I curve in the
absence of microwave excitation becomes linearized under irradiation, unlike
expectations, and they suggest a similarity between the roles of the radiation
intensity and the inverse temperature.Comment: 3 color figures; publishe
Equilibrium Current and Orbital Magnetization in a Quantum Hall Fluid
We present a general theory for the equilibrium current distribution in an
interacting two-dimensional electron gas subjected to a perpendicular magnetic
field, and confined by a potential that varies slowly on the scale of the
magnetic length. The distribution is found to consist of strips or channels of
current, which alternate in direction, and which have universal integrated
strength.Comment: 13 pages, Revtex, to appear in the proceedings of the "Workshop on
Novel Physics in Low-Dimensional Electron Systems" held in Madra
Composite fermions in periodic and random antidot lattices
The longitudinal and Hall magnetoresistance of random and periodic arrays of artificial scatterers, imposed on a high-mobility two-dimensional electron gas, were investigated in the vicinity of Landau level filling factor ν=1/2. In periodic arrays, commensurability effects between the period of the antidot array and the cyclotron radius of composite fermions are observed. In addition, the Hall resistance shows a deviation from the anticipated linear dependence, reminiscent of quenching around zero magnetic field. Both effects are absent for random antidot lattices. The relative amplitude of the geometric resonances for opposite signs of the effective magnetic field and its dependence on illumination illustrate enhanced soft wall effects for composite fermions
Frictional Drag Between Coupled 2D Hole Gases in GaAs/AlGaAs Heterostructures
We report on the first measurements of the drag effect between coupled
2D-hole gases. We investigate the coupling by changing the carrier densities in
the quantum wells, the widths of the barriers between the gases and the
perpendicular magnetic field. From the data we are able to attribute the
frictional drag to phonon coupling, because the non-parabolicity allows to tune
the Fermi wavevector and the Fermi velocity separately and, thereby, to
distinguish between phonon- and plasmon-dominated coupling.Comment: 10 pages, 5 figure
Activated Transport in the individual Layers that form the =1 Exciton Condensate
We observe the total filling factor =1 quantum Hall state in a
bilayer two-dimensional electron system with virtually no tunnelling. We find
thermally activated transport in the balanced system with a monotonic increase
of the activation energy with decreasing below 1.65. In the
imbalanced system we find activated transport in each of the layers separately,
yet the activation energies show a striking asymmetry around the balance point.
This implies that the gap to charge-excitations in the {\em individual} layers
is substantially different for positive and negative imbalance.Comment: 4 pages. 4 figure
Exciton condensate at a total filling factor of 1 in Corbino 2D electron bilayers
Magneto-transport and drag measurements on a quasi-Corbino 2D electron
bilayer at the systems total filling factor 1 (v_tot=1) reveal a drag voltage
that is equal in magnitude to the drive voltage as soon as the two layers begin
to form the expected v_tot=1 exciton condensate. The identity of both voltages
remains present even at elevated temperatures of 0.25 K. The conductance in the
current carrying layer vanishes only in the limit of strong coupling between
the two layers and at T->0 K which suggests the presence of an excitonic
circular current
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Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices
We examine the phase and the period of the radiation-induced
oscillatory-magnetoresistance in GaAs/AlGaAs devices utilizing in-situ magnetic
field calibration by Electron Spin Resonance of DiPhenyl-Picryl-Hydrazal. The
results confirm a -independent 1/4 cycle phase shift with respect to the condition for , and they also suggest a small
( 2%) reduction in the effective mass ratio, , with respect
to the standard value for GaAs/AlGaAs devices.Comment: 4 pages, 4 color figure
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