Electrostatic Discharge Test on Cu (In, Ga) Se2 Solar Cell Array

The boundary part of dielectric material, conductive material, and space, known as the triple junction, causes electrostatic discharge. Because the triple junction does not exist on the Cu (In, Ga) Se2 solar cell surface, it should be free of electrostatic discharge. Electrostatic discharge tests on Cu (In, Ga) Se2 were performed in a vacuum chamber which simulated the plasma environment in low Earth orbit and the high-energy electron environment in geostationary orbit. Contrary to the theoretical expectations, electrostatic discharge occurred on the surface of Cu (In, Ga) Se2 and Cu (In, Ga) Se2 suffered degradation of electric performance. The arc track was investigated to make clear the degradation mechanism of Cu (In, Ga) Se2. The arc track worked as a leak resistance because the PN junction collapsed and the materials of front and back surfaces electroded adhere along the arc track

Number of Arcs Estimated on Solar Array of a Geostationary Satellite

Plasma parameters of geosynchronous orbit measured by Los Alamos National Laboratory satellites are analyzed statistically. For each set of plasma parameters, charging analysis is carried out, taking a geostationary satellite representing a typical telecommunication satellite as an example. The number of expected trigger arcs on a solar array is calculated based on the charging duration with severe inverted potential gradient conditions expected in orbit. Using the number of trigger arcs, an appropriate duration of electrostatic discharge ground test is proposed to test the insulation strength against sustained arc phenomena

Investigation of Sustained Arc under Solar Cell

We have so far studied the sustained arc between solar array strings using solar array coupons. The solar cells are connected electrically in series by interconnectors. The interconnector is conductor and is weld at both backside and top of cells. The solar array paddle undergoes the mechanical stress due to thermal cycles in orbit. This stress may cause the separation of interconnector welding backside of cells. If the interconnector is separated from the cell, the string circuit is opened. However solar cells can generate voltage. If the separated interconnector attached to the cell again, the current can flow. If the path between interconnector and cell is formed by insulated adhesive, sustained arc can occur between the separated interconnector and cell. In this paper, the sustained arc between interconnector and cells was investigated experimentally.26th International Symposium on Space Technology and Science (26th ISTS), 1-8 June 2008, Hamamatsu, Japa

Proceedings of the 7 th International Workshop on Radiation Effects on Semiconductor Devices for Space Application Si Substrate Suitable for Radiation-Resistant Space Solar Cells

Abstract Irradiating group-III (B, Al, Ga)-doped Czochralski (CZ)-grown Si substrates as well as B-doped magnetic Czochralski (MCZ)-grown and floating-zone (FZ)-grown Si substrates with 10 MeV protons or 1 MeV electrons, we investigate both the reduction in the hole concentration and the conversion of p-type to n-type using Hall-effect measurements. In all the 10 Ωcm CZ-Si, the density of each acceptor species is reduced by irradiation, and finally the conversion occurs with 1x10 17 cm -2 fluence of 1 MeV electrons or with 2.5x10 14 cm -2 fluence of 10 MeV protons. In 10 Ωcm MCZ-Si and 10 Ωcm FZ-Si, on the other hand, the conversion does not occur under the same irradiation conditions. Moreover, the reduction in the concentration for the FZ-Si is much less than the others. From these results, it is elucidated that the conversion as well as the reduction in the hole concentration is strongly dependent on the concentration of oxygen in Si, not on the type of acceptor species in Si. Therefore, the p-type FZ-Si substrate is appropriate for radiation-resistant space solar cells such as