Inelastic Final-State Interactions and Two-body Hadronic B decays into Single-Isospin channels

The role of inelastic final-state interactions in CP asymmetries and branching ratios is investigated in certain chosen single isospin two-body hadronic B decays. Treating final-state interactions through Pomeron and Regge exchanges, we demonstrate that inelastic final state interactions could lead to sizeable effects on the CP asymmetry.Comment: 23 pages, Latex, 1 eps-figur

First Measurement of the Electromagnetic Form Factor of the Neutral Kaon at a Large Momentum Transfer and the Effect of SU(3)SU(3) Breaking

At large momentum transfers the photon interacts with the charges and spins of the constituent partons in a hadron. It is expected that the neutral kaon can acquire finite electromagnetic form factors because its wave function is affected by the order of magnitude difference between the mass of the strange quark and that of the down quark, or flavor $SU(3)$ breaking. We report on the first measurement of the form factor of neutral kaons at the large timelike momentum transfer of $|Q^2|=17.4$ GeV$^2$ by measuring the cross section for $e^+e^-\to K_SK_L$ at $\sqrt{s}=4.17$ GeV using CLEO-c data with an integrated luminosity of 586 pb$^{-1}$. We obtain $F_{K_SK_L}(17.4~\textrm{GeV}^2)=5.3\times10^{-3}$, with a 90% C.L. interval of $(2.9-8.2)\times10^{-3}$. This is nearly an order of magnitude smaller than $F_{K^+K^-}(17.4~\textrm{GeV}^2)=(44\pm1)\times10^{-3}$, and indicates that the effect of $SU(3)$ breaking is small. In turn, this makes it unlikely that the recently observed strong violation of the pQCD prediction, $F_{\pi^+\pi^-}(|Q^2|)/F_{K^+K^-}(|Q^2|)=f_\pi^2/f_K^2$, which is based on the assumption of similar wave functions for the pions and kaons, can be attributed to $SU(3)$ breaking alone.Comment: 4 pages, 2 figures, accepted to PL

Quantitative Auger depth profiling of LPCVD and PECVD silicon nitride films

Thin silicon nitride films (100–210 nm) with refractive indices varying from 1.90 to 2.10 were deposited on silicon substrates by low pressure chemical vapour deposition (LPCVD) and plasma enhanced chemical vapour deposition (PECVD). Rutherford backscattering spectrometry (RBS), ellipsometry, surface profiling measurements and Auger electron spectroscopy (AES) in combination with Ar+ sputtering were used to characterize these films. We have found that the use of (p-p)heights of the Si LVV and N KLL Auger transitions in the first derivative of the energy distribution (dN(E)/dE) leads to an accurate determination of the silicon nitride composition in Auger depth profiles over a wide range of atomic Si/N ratios. Moreover, we have shown that the Si KLL Auger transition, generally considered to be a better probe than the low energy Si LVV Auger transition in determining the chemical composition of silicon nitride layers, leads to deviating results