Untersuchungen zum Dotieren von Silicium aus einer Oberflächenbelegung mit Phosphor in einem Kurzzeitprozess

Silicon, shallow junction, rapid thermal doping, vapour phase doping, atomic-layer doping, phosphorus diffusion, phosphine adsorption, sheet resistance, four-point probe, native oxidationMagdeburg, Univ., Fak. für Elektrotechnik und Informationstechnik, Diss., 2007Bodo Kalkofe

High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved

Application of atomic layer deposited dopant sources for ultra‐shallow doping of silicon

The advanced silicon semiconductor technology requires doping methods for production of ultra‐shallow junctions with sufficiently low sheet resistance. Furthermore, advanced 3‐dimensional topologies may require controlled local doping that cannot be achieved by ionimplantation. Here, the application of the atomic layer deposition (ALD) method for pre‐deposition of dopant sources is presented. Antimony oxide and boron oxide were investigated for such application. Ozone‐based ALD was carried out on silicon wafers by using triethylantimony or tris‐(dimethylamido)borane. Very homogeneous Sb2O5 deposition could be achieved on flat silicon wafers and in trench structures. The thermal stability of antimony oxide layers was investigated by rapid thermal annealing experiments. The layers were not stable above 750 °C. Therefore, this material failed to act as dopant source so far. In contrast, ultra‐shallow boron doping of silicon from ALD grown boron oxide films was successful. However, pure B2O3 films were highly unstable after exposure to ambient air. The boron oxide films could be protected by thin Sb2O5 or Al2O3 films that were in‐situ grown by ALD. Low temperature ALD of Al2O3 at 50 °C from trimethylaluminium (TMA) and ozone was investigated in detail with respect of its protective effect on boron oxide. Interestingly, it was observed that already one ALD cycle of TMA and O3 resulted in significant increase in stability of the boron oxide in air

Investigation of oxide thin films deposited by atomic layer deposition as dopant source for ultra-shallow doping of silicon

Atomic layer deposition of solid dopant sources for silicon was carried out by using triethylantimony and ozone, and tris-(dimethylamido)borane and ozone as precursors for antimony or boron containing oxides, respectively. It was proved that homogenous antimony oxide deposition could be achieved on flat silicon wafers and in trench structures. Little growth was found below 100 °C deposition temperature and linear temperature dependence on the growth rate between 100 and 250 °C. The oxide films were not stable above 750 °C and therefore failed to act as dopant source for silicon so far. Boron containing films were only obtained at a deposition temperature of 50 °C. These films were highly instable after exposure to air but degradation could be delayed by thin films of antimony oxide or aluminium oxide that were in situ grown by ALD as well. Only little boron was found by ex-situ chemical analysis. However, rapid thermal annealing of such boron containing dopant source layers resulted in high concentrations of active boron close to the silicon surface. The dependence of the doping results on the thickness of the initial boron containing films could be shown

The Case Against Cold, Dark Chromospheres

Is the solar chromosphere always hot, with relatively small temperature variations ($\delta T/T\sim0.1$); or is it cold most of the time, with temperature fluctuations that reach $\delta T/T\sim 10$ at the top of the chromosphere? Or, equivalently: Is the chromosphere heated continually, or only for a few seconds once every three minutes? Two types of empirical model, one essentially time independent and always hot, the other highly time dependent and mostly cold, come to fundamentally different conclusions. This paper analyzes the time-dependent model of the quiet, nonmagnetic chromosphere by Carlsson & Stein (1994: CS94) and shows that it predicts deep absorption lines, none of which is observed; intensity fluctuations in the Lyman continuum that are much larger than observed; and time-averaged emission that falls far short of the observed emission. The paper concludes that the solar chromosphere, while time dependent, is never cold and dark. The same conclusion applies for stellar chromospheres. A complete, time-dependent model of the nonmagnetic chromosphere must describe two phenomena: (1) dynamics, like that modeled by CS94 for chromospheric bright points but corrected for the geometrical properties of shocks propagating in an upward-expanding channel; and (2) the energetically more important general, sustained heating of the chromosphere, as described by current time-independent empirical models, but modified in the upper photosphere for the formation of molecular absorption lines of CO in a dynamical medium. This model is always hot and, except for absorption features caused by departures from local thermodynamic equilibrium, shows chromospheric lines only in emission.Comment: 22 pages, 5 figures (in 6 files

Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B2O3 films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processesInvestment Bank Berlin and EFR

Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B2O3 films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.Investment Bank Berlin and EFR

Acoustic oscillations in the field-free, gravitationally stratified Acoustic oscillations in the field-free, gravitationally stratified cavities under solar bipolar magnetic canopies

The main goal is to study the dynamics of the gravitationally stratified, field-free cavities in the solar atmosphere, located under small-scale, cylindrical magnetic canopies, in response to explosive events in the lower-lying regions (due to granulation, small-scale magnetic reconnection, etc.). We derive the two-dimensional Klein-Gordon equation for isothermal density perturbations in cylindrical coordinates. The equation is first solved by a standard normal mode analysis in order to obtain the free oscillation spectrum of the cavity. Then, the equation is solved in the case of impulsive forcing associated to a pressure pulse specified in the lower-lying regions. The normal mode analysis shows that the entire cylindrical cavity of granular dimensions tends to oscillate with frequencies of 5-8 mHz and also with the atmospheric cut-off frequency. Furthermore, the passage of a pressure pulse, excited in the convection zone, sets up a wake in the cavity oscillating with the same cut-off frequency. The wake oscillations can resonate with the free oscillation modes, which leads to an enhanced observed oscillation power. The resonant oscillations of these cavities explain the observed power halos near magnetic network cores and active regions.Comment: 8 pages, 8 figures, accepted in Astronomy and Astrophysic

Acoustic waves in a stratified atmosphere

In a gravitationally stratified atmosphere, small temperature variations distort the paths of acoustic waves from the rectilinear paths in an isothermal atmosphere. For temperature increasing upward, low-frequency waves near the acoustic cutoff frequency propagating at a given polar angle are refracted towards the vertical direction (focused) and high-frequency waves, away from the vertical (defocused). Similarly, for temperature increasing towards the axis of a vertical cylinder, low-frequency waves are focused and high-frequency waves are defocused. This effect of temperature inhomogeneities may be important for wave propagation in the chromospheric K2v bright point phenomenon