The Grover algorithm with large nuclear spins in semiconductors

We show a possible way to implement the Grover algorithm in large nuclear spins 1/2<I<9/2 in semiconductors. The Grover sequence is performed by means of multiphoton transitions that distribute the spin amplitude between the nuclear spin states. They are distinguishable due to the quadrupolar splitting, which makes the nuclear spin levels non-equidistant. We introduce a generalized rotating frame for an effective Hamiltonian that governs the non-perturbative time evolution of the nuclear spin states for arbitrary spin lengths I. The larger the quadrupolar splitting, the better the agreement between our approximative method using the generalized rotating frame and exact numerical calculations.Comment: 11 pages, 18 EPS figures, REVTe

Electric-field dependent spin diffusion and spin injection into semiconductors

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue in metals. In this regime there are two distinct spin diffusion lengths. Furthermore, spin injection from a ferromagnetic metal into a semiconductor is enhanced by several orders of magnitude and spins can be transported over distances much greater than the low-field spin diffusion length.Comment: 5 pages, 3 eps figure

Spin Precession and Oscillations in Mesoscopic Systems

We compare and contrast magneto-transport oscillations in the fully quantum (single-electron coherent) and classical limits for a simple but illustrative model. In particular, we study the induced magnetization and spin current in a two-terminal double-barrier structure with an applied Zeeman field between the barriers and spin disequilibrium in the contacts. Classically, the spin current shows strong tunneling resonances due to spin precession in the region between the two barriers. However, these oscillations are distinguishable from those in the fully coherent case, for which a proper treatment of the electron phase is required. We explain the differences in terms of the presence or absence of coherent multiple wave reflections.Comment: 9 pages, 5 figure

Spin injection and electric field effect in degenerate semiconductors

We analyze spin-transport in semiconductors in the regime characterized by $T\stackrel{<}{\sim}T_F$ (intermediate to degenerate), where $T_F$ is the Fermi temperature. Such a regime is of great importance since it includes the lightly doped semiconductor structures used in most experiments; we demonstrate that, at the same time, it corresponds to the regime in which carrier-carrier interactions assume a relevant role. Starting from a general formulation of the drift-diffusion equations, which includes many-body correlation effects, we perform detailed calculations of the spin injection characteristics of various heterostructures, and analyze the combined effects of carrier density variation, applied electric field and Coulomb interaction. We show the existence of a degenerate regime, peculiar to semiconductors, which strongly differs, as spin-transport is concerned, from the degenerate regime of metals.Comment: Version accepted for publication in Phys. Rev.

Optoelectric spin injection in semiconductor heterostructures without ferromagnet

We have shown that electron spin density can be generated by a dc current flowing across a $pn$ junction with an embedded asymmetric quantum well. Spin polarization is created in the quantum well by radiative electron-hole recombination when the conduction electron momentum distribution is shifted with respect to the momentum distribution of holes in the spin split valence subbands. Spin current appears when the spin polarization is injected from the quantum well into the $n$-doped region of the $pn$ junction. The accompanied emission of circularly polarized light from the quantum well can serve as a spin polarization detector.Comment: 2 figure

Spin dynamics in high-mobility two-dimensional electron systems

Understanding the spin dynamics in semiconductor heterostructures is highly important for future semiconductor spintronic devices. In high-mobility two-dimensional electron systems (2DES), the spin lifetime strongly depends on the initial degree of spin polarization due to the electron-electron interaction. The Hartree-Fock (HF) term of the Coulomb interaction acts like an effective out-of-plane magnetic field and thus reduces the spin-flip rate. By time-resolved Faraday rotation (TRFR) techniques, we demonstrate that the spin lifetime is increased by an order of magnitude as the initial spin polarization degree is raised from the low-polarization limit to several percent. We perform control experiments to decouple the excitation density in the sample from the spin polarization degree and investigate the interplay of the internal HF field and an external perpendicular magnetic field. The lifetime of spins oriented in the plane of a [001]-grown 2DES is strongly anisotropic if the Rashba and Dresselhaus spin-orbit fields are of the same order of magnitude. This anisotropy, which stems from the interference of the Rashba and the Dresselhaus spin-orbit fields, is highly density-dependent: as the electron density is increased, the kubic Dresselhaus term becomes dominant and reduces the anisotropy.Comment: 13 pages, 6 figure

Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures

Ballistic spin polarized transport through diluted magnetic semiconductor (DMS) single and double barrier structures is investigated theoretically using a two-component model. The tunneling magnetoresistance (TMR) of the system exhibits oscillating behavior when the magnetic field are varied. An interesting beat pattern in the TMR and spin polarization is found for different NMS/DMS double barrier structures which arises from an interplay between the spin-up and spin-down electron channels which are splitted by the s-d exchange interaction.Comment: 4 pages, 6 figures, submitted to Phys. Rev.

Electron Spin Decoherence in Bulk and Quantum Well Zincblende Semiconductors

A theory for longitudinal (T1) and transverse (T2) electron spin coherence times in zincblende semiconductor quantum wells is developed based on a non-perturbative nanostructure model solved in a fourteen-band restricted basis set. Distinctly different dependences of coherence times on mobility, quantization energy, and temperature are found from previous calculations. Quantitative agreement between our calculations and measurements is found for GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells.Comment: 11 pages, 3 figure

Spin injection through the depletion layer: a theory of spin-polarized p-n junctions and solar cells

A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all-semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized {\it p-n} junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.Comment: 4 pages, 3 figure

Tuning the polarization states of optical spots at the nanoscale on the poincar´e sphere using a plasmonic nanoantenna

It is shown that the polarization states of optical spots at the nanoscale can be manipulated to various points on the Poincar´e sphere using a plasmonic nanoantenna. Linearly, circularly, and elliptically polarized near-field optical spots at the nanoscale are achieved with various polarization states on the Poincar´e sphere using a plasmonic nanoantenna. A novel plasmonic nanoantenna is illuminated with diffraction-limited linearly polarized light. It is demonstrated that the plasmonic resonances of perpendicular and longitudinal components of the nanoantenna and the angle of incident polarization can be tuned to obtain optical spots beyond the diffraction limit with a desired polarization and handedness