Optical far-infrared properties of graphene monolayer and multilayers

We analyze the features of the graphene mono- and multilayer reflectance in the far-infrared region as a function of frequency, temperature, and carrier density taking the intraband conductance and the interband electron absorbtion into account. The dispersion of plasmon mode of the multilayers is calculated using Maxwell's equations with the influence of retardation included. At low temperatures and high electron densities, the reflectance of multilayers as a function of frequency has the sharp downfall and the subsequent deep well due to the threshold of electron interband absorbtion.Comment: 9 pages, 4 figure

Effect of Antiferromagnetic Interlayer Coupling on Current-Assisted Magnetization Switching

We compare magnetization switching in Co/Cu/Co nanopillars with uncoupled and dipole-field coupled Co layers. In uncoupled nanopillars, current-driven switching is hysteretic at low magnetic field H and changes to reversible, characterized by telegraph noise, at high H. We show that dipolar coupling both affects the switching current and causes the switching to become reversible at small H. The coupling thus changes the switching to reversible, hysteretic, and then reversible again as H increases. We describe our results in terms of current-assisted thermal activation.Comment: 3 pages, 3 figure

Dynamics of Domain Wall in a Biaxial Ferromagnet With Spin-torque

The dynamics of the domain wall (DW) in a biaxial ferromagnet interacting with a spin-polarized current are described by sine-gordon (SG) equation coupled with Gilbert damping term in this paper. Within our frame-work of this model, we obtain a threshold of the current in the motion of a single DW with the perturbation theory on kink soliton solution to the corresponding ferromagnetic system, and the threshold is shown to be dependent on the Gilbert damping term. Also, the motion properties of the DW are discussed for the zero- and nonzero-damping cases, which shows that our theory to describe the dynamics of the DW are self-consistent.Comment: 7pages, 3figure

Current-Induced Magnetization Reversal in High Magnetic Fields in Co/Cu/Co Nanopillars

Current-induced magnetization dynamics in Co/Cu/Co trilayer nanopillars (~100nm in diameter) has been studied experimentally for large applied fields perpendicular to the layers. An abrupt and hysteretic increase in dynamic resistance is observed at high current densities for one polarity of the current, comparable to the giant magnetoresistance effect observed at low fields. A micromagnetic model, that includes a spin-transfer torque, suggests that the current induces a complete reversal of the thin Co layer to alignment antiparallel to the applied field-that is, to a state of maximum magnetic energy.Comment: 11 pages, 3 figures, (submitted to Phys. Rev. Lett.), added missing figure caption of fig. 3, updated to published versio

Current-induced spin-wave excitations in a single ferromagnetic layer

A new current induced spin-torque transfer effect has been observed in a single ferromagnetic layer without resorting to multilayers. At a specific current density of one polarity injected from a point contact, abrupt resistance changes due to current-induced spin wave excitations have been observed. The critical current at the onset of spin-wave excitations depends linearly on the external field applied perpendicular to the layer. The observed effect is due to current-driven heterogeneity in an otherwise uniform ferromagnetic layer.Comment: 12 pages, 4 figure

Temperature- and Bias-dependence of magnetoresistance in doped manganite thin film trilayer junctions

Thin film trilayer junction of La$$Sr$_{0.33}$MnO$_3$ - SrTiO$_3$ - La$_{0.67}$Sr$_{0.33}$MnO$_3$ shows a factor of 9.7 change in resistance, in a magnetic field around 100 Oe at 14K. The junction magnetoresistance is bias and temperature dependent. The energy scales associated with bias and temperature dependence are an order of magnitude apart. The same set of energies also determine the bias and temperature dependence of the differential conductance of the junction. We discuss these results in terms of metallic cluster inclusions at the junction-barrier interface.Comment: 3 pages, 4 figure

Thin-Film Trilayer Manganate Junctions

Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a La$_{0.67}$Sr$_{0.33}$MnO$_3$% -SrTiO$_3$-La$_{0.67}$ Sr$_{0.33}$MnO$_3$ trilayer device supporting current-perpendicular transport. Large magnetoresistance of up to a factor of five change was observed in these junctions at 4.2K in a relatively low field of the order of 100 Oe. Temperature and bias dependent studies revealed a complex junction interface structure whose materials physics has yet to be understood.Comment: 20 pages, 14 figures. To appear in Phil. Trans. R. Soc. Lond. A vol.356 (1998

Currents, Torques, and Polarization Factors in Magnetic Tunnel Junctions

Application of Bardeen's tunneling theory to magnetic tunnel junctions having a general degree of atomic disorder reveals the close relationship between magneto-conduction and voltage-driven pseudo-torque, as well as the thickness dependence of tunnel-polarization factors. Among the results: 1) The torque generally varies as sin theta at constant applied voltage. 2) Whenever polarization factors are well defined, the voltage-driven torque on each moment is uniquely proportional to the polarization factor of the other magnet. 3) At finite applied voltage, this relation predicts significant voltage-asymmetry in the torque. For one sign of voltage the torque remains substantial even when the magnetoconductance is greatly diminished. 4) A broadly defined junction model, called ideal middle, allows for atomic disorder within the magnets and F/I interface regions. In this model, the spin dependence of a state-weighting factor proportional to the sum over general state index of evaluated within the (e.g. vacuum) barrier generalizes the local state density in previous theories of the tunnel-polarization factor. 5) For small applied voltage, tunnel-polarization factors remain legitimate up to first order in the inverse thickness of the ideal middle. An algebraic formula describes the first-order corrections to polarization factors in terms of newly defined lateral auto-correllation scales.Comment: This version no. 3 is thoroughly revised for clarity. Just a few notations and equations are changed, and references completed. No change in results. 17 pages including 4 figure

Analytical solution of the equation of motion for a rigid domain wall in a magnetic material with perpendicular anisotropy

This paper reports the solution of the equation of motion for a domain wall in a magnetic material which exhibits high magneto-crystalline anisotropy. Starting from the Landau-Lifschitz-Gilbert equation for field-induced motion, we solve the equation to give an analytical expression, which specifies the domain wall position as a function of time. Taking parameters from a Co/Pt multilayer system, we find good quantitative agreement between calculated and experimentally determined wall velocities, and show that high field uniform wall motion occurs when wall rigidity is assumed.Comment: 4 pages, 4 figure

Spin-torque switching: Fokker-Planck rate calculation

We describe a new approach to understanding and calculating magnetization switching rates and noise in the recently observed phenomenon of "spin-torque switching". In this phenomenon, which has possible applications to information storage, a large current passing from a pinned ferromagnetic (FM) layer to a free FM layer switches the free layer. Our main result is that the spin-torque effect increases the Arrhenius factor $\exp(-E/kT)$ in the switching rate, not by lowering the barrier $E$, but by raising the effective spin temperature $T$. To calculate this effect quantitatively, we extend Kramers' 1940 treatment of reaction rates, deriving and solving a Fokker-Planck equation for the energy distribution including a current-induced spin torque of the Slonczewski type. This method can be used to calculate slow switching rates without long-time simulations; in this Letter we calculate rates for telegraph noise that are in good qualitative agreement with recent experiments. The method also allows the calculation of current-induced magnetic noise in CPP (current perpendicular to plane) spin valve read heads.Comment: 11 pages, 8 figures, 1 appendix Original version in Nature format, replaced by Phys. Rev. Letters format. No substantive change