587 research outputs found
Tuning the Correlation Decay in the Resistance Fluctuations of Multi-Species Networks
A new network model is proposed to describe the resistance noise
in disordered materials for a wide range of values ().
More precisely, we have considered the resistance fluctuations of a thin
resistor with granular structure in different stationary states: from nearly
equilibrium up to far from equilibrium conditions. This system has been
modelled as a network made by different species of resistors, distinguished by
their resistances, temperature coefficients and by the energies associated with
thermally activated processes of breaking and recovery. The correlation
behavior of the resistance fluctuations is analyzed as a function of the
temperature and applied current, in both the frequency and time domains. For
the noise frequency exponent, the model provides at low
currents, in the Ohmic regime, with decreasing inversely with the
temperature, and at high currents, in the non-Ohmic regime.
Since the threshold current associated with the onset of nonlinearity also
depends on the temperature, the proposed model qualitatively accounts for the
complicate behavior of versus temperature and current observed in many
experiments. Correspondingly, in the time domain, the auto-correlation function
of the resistance fluctuations displays a variety of behaviors which are tuned
by the external conditions.Comment: 26 pages, 16 figures, Submitted to JSTAT - Special issue SigmaPhi200
Low-frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes
We present a systematic study on low-frequency current fluctuations of
nano-devices consisting of one single semiconducting nanotube, which exhibit
significant 1/f-type noise. By examining devices with different switching
mechanisms, carrier types (electrons vs. holes), and channel lengths, we show
that the 1/f fluctuation level in semiconducting nanotubes is correlated to the
total number of transport carriers present in the system. However, the 1/f
noise level per carrier is not larger than that of most bulk conventional
semiconductors, e.g. Si. The pronounced noise level observed in nanotube
devices simply reflects on the small number of carriers involved in transport.
These results not only provide the basis to quantify the noise behavior in a
one-dimensional transport system, but also suggest a valuable way to
characterize low-dimensional nanostructures based on the 1/f fluctuation
phenomenon
Long-range potential fluctuations and 1/f noise in hydrogenated amorphous silicon
We present a microscopic theory of the low-frequency voltage noise (known as
"1/f" noise) in micrometer-thick films of hydrogenated amorphous silicon. This
theory traces the noise back to the long-range fluctuations of the Coulomb
potential produced by deep defects, thereby predicting the absolute noise
intensity as a function of the distribution of defect activation energies. The
predictions of this theory are in very good agreement with our own experiments
in terms of both the absolute intensity and the temperature dependence of the
noise spectra.Comment: 8 pages, 3 figures, several new parts and one new figure are added,
but no conceptual revision
Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices
Low-frequency 1/f noise is ubiquitous, and dominates the signal-to-noise
performance in nanodevices. Here we investigate the noise characteristics of
single-layer and bilayer graphene nano-devices, and uncover an unexpected 1/f
noise behavior for bilayer devices. Graphene is a single layer of graphite,
where carbon atoms form a 2D honeycomb lattice. Despite the similar
composition, bilayer graphene (two graphene monolayers stacked in the natural
graphite order) is a distinct 2D system with a different band structure and
electrical properties. In graphene monolayers, the 1/f noise is found to follow
Hooge's empirical relation with a noise parameter comparable to that of bulk
semiconductors. However, this 1/f noise is strongly suppressed in bilayer
graphene devices, and exhibits an unusual dependence on the carrier density,
different from most other materials. The unexpected noise behavior in graphene
bilayers is associated with its unique band structure that varies with the
charge distribution among the two layers, resulting in an effective screening
of potential fluctuations due to external impurity charges. The findings here
point to exciting opportunities for graphene bilayers in low-noise
applications
Data-Driven Definitions for Active and Structural MRI Lesions in the Sacroiliac Joint in Spondyloarthritis and their Predictive Utility
OBJECTIVES: To determine quantitative sacroiliac joint (SIJ) MRI lesion cut-offs that optimally define a positive MRI for inflammatory and structural lesions typical of axial spondyloarthritis (axSpA) and that predict clinical diagnosis. METHODS: The ASAS MRI group assessed MRIs from the ASAS Classification Cohort in two reading exercises: A. 169 cases and 7 central readers; B. 107 cases and 8 central readers. We calculated sensitivity/specificity for the number of SIJ quadrants or slices with bone marrow edema (BME), erosion, fat lesion, where a majority of central readers had high confidence there was a definite active or structural lesion. Cut-offs with ≥95% specificity were analyzed for their predictive utility for follow-up rheumatologist diagnosis of axSpA by calculating positive/negative predictive values (PPV/NPV) and selecting cut-offs with PPV≥95%. RESULTS: Active or structural lesions typical of axSpA on MRI had PPV≥95% for clinical diagnosis of axSpA. Cut-offs that best reflect definite active lesion typical of axSpA were either ≥4 SIJ quadrants with BME at any location or at the same location in ≥ 3 consecutive slices. For definite structural lesion, the optimal cut-offs were any one of ≥ 3 SIJ quadrants with erosion or ≥ 5 with fat lesion, erosion at the same location for ≥2 consecutive slices, fat lesion at the same location for ≥3 consecutive slices, or presence of a 'deep' (>1cm) fat lesion. CONCLUSION: We propose cut-offs for definite active and structural lesions typical of axSpA that have high PPV for a long-term clinical diagnosis of axSpA for application in disease classification and clinical research
- …