Nonlinear distortion of intense THz beams

Near- and far-field beam profiles were measured for THz pulses generated in LiNbO3 by optical rectification of 200 fs pulses with a tilted pulse front. The variation of the THz beam size and a dramatically increasing divergence angle with increasing pump fluence were observed in the (horizontal) plane of the pulse front tilt. No significant variation was observed in the vertical direction. The reason for the observed nonlinear beam distortion is the shortening of the effective interaction length for THz generation caused by the combined effect of pump spectral broadening and angular dispersion in the tilted pulse front geometry. Our results indicate that nonlinear THz beam distortion effects have to be taken into account when designing intense THz sources and related experiments

High-energy terahertz pulses from semiconductors pumped beyond the three-photon absorption edge

A new route to efficient generation of THz pulses with high-energy was demonstrated using semiconductor materials pumped at an infrared wavelength sufficiently long to suppress both two- and three-photon absorption and associated free-carrier absorption at THz frequencies. For pumping beyond the three-photon absorption edge, the THz generation efficiency for optical rectification of femtosecond laser pulses with tilted intensity front in ZnTe was shown to increase 3.5 times, as compared to pumping below the absorption edge. The four-photon absorption coefficient of ZnTe was estimated to be β₄=(4±1)×10⁻⁵ cm⁵/GW³. THz pulses with 14 μJ energy were generated with as high as 0.7% efficiency in ZnTe pumped at 1.7 µm. It is shown that scaling the THz pulse energy to the mJ level by increasing the pump spot size and pump pulse energy is feasible

Efficient semiconductor multicycle terahertz pulse source

Multicycle THz pulse generation by optical rectification in GaP semiconductor nonlinear material is investigated by numerical simulations. It is shown that GaP can be an efficient and versatile source with up to about 8% conversion efficiency and a tuning range from 0.1 THz to about 7 THz. Contact-grating technology for pulse-front tilt can ensure an excellent focusability and scaling the THz pulse energy beyond 1 mJ. Shapeable infrared pump pulses with a constant intensity-modulation period can be delivered for example by a flexible and efficient dual-chirped optical parametric amplifier. Potential applications include linear and nonlinear THz spectroscopy and THz-driven acceleration of electrons

High-energy terahertz pulses from semiconductors pumped beyond the three-photon absorption edge

A new route to efficient generation of THz pulses with high-energy was demonstrated using semiconductor materials pumped at an infrared wavelength sufficiently long to suppress both two- and three-photon absorption and associated free-carrier absorption at THz frequencies. For pumping beyond the three-photon absorption edge, the THz generation efficiency for optical rectification of femtosecond laser pulses with tilted intensity front in ZnTe was shown to increase 3.5 times, as compared to pumping below the absorption edge. The four-photon absorption coefficient of ZnTe was estimated to be β₄=(4±1)×10⁻⁵ cm⁵/GW³. THz pulses with 14 μJ energy were generated with as high as 0.7% efficiency in ZnTe pumped at 1.7 µm. It is shown that scaling the THz pulse energy to the mJ level by increasing the pump spot size and pump pulse energy is feasible