Printed organic TFTs on flexible substrate for complementary circuits

Organic Thin film Transistors (OTFT) have been widely investigated in these last years as potential candidate for the development of low cost, flexible and lightweight active-matrix backplanes for display applications. Indeed the organic semiconductors provide both promising electrical performances tunable by chemistry and the ability to be processed at low temperature with innovative printing technics on various large scale substrates. Thanks to the recent developments on both n-type and p-type solution-processed organic semiconductors, we have developed a printable organic complementary technology compatible with flexible PEN substrates. By combining state of the art materials exhibiting mobility in the range of 1 cm 2 /V.s and silicon inspired compact modeling and simulation approach, we were able to design and fabricate circuit's building blocks that provide the switching, digital and analog functions required for the fabrication of printed systems on foil

Reliability of OTFTs on flexible substrate: mechanical stress effect

Flexibility will significantly expand the application scope of electronics, particularly large-area electronics. Over the last 10 years, printed organic electronic is believed to be one of the next major technological breakthroughs in the field of microelectronic and the use of printing technology to process organic field-effect transistors (OFETs) opens promising perspectives for low-cost, large-area circuits integrated on flexible, plastic substrates. With amorphous polymer-based thin film transistors acceptable electrical performances are now achieved with relatively good stability at ambient air. In the literature a lot of work has been devoted to study degradation of device characteristics under bias stress conditions but only few papers deal with the mechanical behavior. In this paper, we review our first reliability results obtained on flexible organic thin film transistors under mechanical stresses. The variations of electrical characteristics under bending tests, both in compression and tension, have been studied. Using specific equipment, we have also evaluated the reliability of transistors under cyclic bending tests. The stress dependency of the transfer characteristic deviates from the one observed for inorganic material like silicon

Statistical analysis of CD variation across the lens field

International audienc

CD Dispersion Across the Lens Field: Influence on Transistor Characteristics

International audienc

Mechanical and thermal reliability of printed organic thin-film transistor

International audienceOver the last 10 years, organic field-effect transistors (OFETs) have moved to an emerging technology enabling electronic functionalities to be integrated on flexible, plastic substrates. Acceptable electrical performances are now achieved with relatively good stability at ambient air. A lot of work has been devoted to study degradation of device characteristics under bias stress conditions but only few papers deal with the mechanical and thermal effects. In this paper, we review our first reliability results obtained on organic thin-film transistors under mechanical and thermal stresses. The variations of electrical characteristics under bending tests, both in compression and tension, have been studied. Using a specific equipment, we have also evaluated the reliability of transistors under cyclic bending tests. The stress dependency of the transfer characteristic deviates from the one observed for inorganic material like silicon. Possible explanations will be discussed. Finally, thermal step stresses from 110 C to 160 C have been done to evaluate the robustness of the devices. Catastrophic degradation has been observed at 160 C. Work is still in progress to understand the physical mechanism. 2010 Elsevier Ltd. All rights reserved

Contact Resistance in Top Gate / Bottom Contact OTFTs.

National audienc

Modified transmission-line method for contact resistance extraction in organic field-effect transistors

International audienc